Abstract: A multi-purpose hand held tool is provided which allows an individual to perform several tasks and reduces the need for additional tools. Specifically, the tool includes a hammer and a claw with an extension providing additional leverage to the claw for prying objects apart and for pulling nails. Additionally, the tool provides a ring and catches useful for pulling fence wiring, such as barbed wire during the installation of a fence.

Abstract: A multi-purpose hand tool is provided which allows an individual to perform several tasks and reduces the need for additional tools. Specifically, the tool includes a hammer and a claw with an extension providing additional leverage to the claw for prying objects apart and for pulling nails. Additionally, the hand held tool provides a ring and catches useful for pulling fence wiring such as barbed wire during the installation of a fence.

Abstract: A multi-purpose hand held tool is provided which allows an individual to perform several tasks and reduces the need for additional tools. Specifically, the tool includes a hammer and a claw with an extension providing additional leverage to the claw for prying objects apart and for pulling nails. Additionally, the hand held tool provides a ring and catches useful for pulling fence wiring such as barbed wire during the installation of a fence.

Abstract: A class of epoxy bond and stop etch (EBASE) microelectronic fabrication techniques is disclosed. The essence of such techniques is to grow circuit components on top of a stop etch layer grown on a first substrate. The first substrate and a host substrate are then bonded together so that the circuit components are attached to the host substrate by the bonding agent. The first substrate is then removed, e.g., by a chemical or physical etching process to which the stop etch layer is resistant. EBASE fabrication methods allow access to regions of a device structure which are usually blocked by the presence of a substrate, and are of particular utility in the fabrication of ultrafast electronic and optoelectronic devices and circuits.

Abstract: A double electron layer tunneling device is presented. Electrons tunnel from a two dimensional emitter layer to a two dimensional tunneling layer and continue traveling to a collector at a lower voltage. The emitter layer is interrupted by an isolation etch, a depletion gate, or an ion implant to prevent electrons from traveling from the source along the emitter to the drain. The collector is similarly interrupted by a backgate, an isolation etch, or an ion implant. When the device is used as a transistor, a control gate is added to control the allowed energy states of the emitter layer. The tunnel gate may be recessed to change the operating range of the device and allow for integrated complementary devices. Methods of forming the device are also set forth, utilizing epoxy-bond and stop etch (EBASE), pre-growth implantation of the backgate or post-growth implantation.