Patents by Inventor Jerry Chang-Jui Kao

Jerry Chang-Jui Kao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11456728
    Abstract: A circuit includes first and second power domains. The first power domain has a first power supply voltage level and includes a master latch, a first level shifter, and a slave latch coupled between the master latch and the first level shifter. The second power domain has a second power supply voltage level different from the first power supply voltage level and includes a retention latch coupled between the slave latch and the first level shifter, and the retention latch includes a second level shifter.
    Type: Grant
    Filed: May 7, 2021
    Date of Patent: September 27, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Kai-Chi Huang, Yung-Chen Chien, Chi-Lin Liu, Wei-Hsiang Ma, Jerry Chang Jui Kao, Shang-Chih Hsieh, Lee-Chung Lu
  • Publication number: 20220293469
    Abstract: A semiconductor device includes several first cell row an several second cell rows. The first cell rows extend in a first direction. Each of the first cell rows has a first row height. A first row of the first cell rows is configured for a first cell to be arranged. The second cell rows extend in the first direction. Each of the second cell rows has a second row height that is different from the first row height. At least one row of the second cell rows includes a portion for at least one second cell to be arranged. The portion has a third row height that is different from the first row height and the second row height.
    Type: Application
    Filed: June 2, 2022
    Publication date: September 15, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jerry Chang-Jui KAO, Hui-Zhong ZHUANG, Li-Chung HSU, Sung-Yen YEH, Yung-Chen CHIEN, Jung-Chan YANG, Tzu-Ying LIN
  • Publication number: 20220293470
    Abstract: A system includes a non-transitory storage medium encoded with a set of instructions and a processor. The processor is configured to execute the set of instructions. The set of instructions is configured to cause the processor to: obtain, based on a netlist of a circuit, values each corresponding to one of transistors included in the circuit; compare the values with a threshold value; in response to a comparison, generate an adjusted netlist of the circuit by adding redundant transistors; and determine, based on the adjusted netlist, one of layout configurations for the circuit. The layout configurations include first cell rows each having a first row height and second cell rows each having a second row height different from the first row height.
    Type: Application
    Filed: June 2, 2022
    Publication date: September 15, 2022
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jerry Chang-Jui KAO, Hui-Zhong ZHUANG, Li-Chung HSU, Sung-Yen YEH, Yung-Chen CHIEN, Jung-Chan YANG, Tzu-Ying LIN
  • Patent number: 11423204
    Abstract: A system includes a substrate having a first side and a second side opposite the first side, a cell on the substrate having a first pin on either the first side or the second side, and a second pin on the second side, a first signal connected to the first pin, and a second signal connected to the second pin.
    Type: Grant
    Filed: April 14, 2021
    Date of Patent: August 23, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LIMITED
    Inventors: Sheng-Hsiung Chen, Jerry Chang Jui Kao, Kuo-Nan Yang, Jack Liu
  • Publication number: 20220239286
    Abstract: A semiconductor device and a method of operating a semiconductor device are provided. The semiconductor device includes a first latching circuit and a second latching circuit coupled to the first latching circuit. The second latching circuit includes a first feedback circuit and a first transmission circuit, the first feedback circuit configured to receive a first clock signal of a first phase and a second clock signal of a second phase, and the first transmission circuit configured to receive the second clock signal and a third clock signal of a third phase. The first feedback circuit is configured to be turned off by the first clock signal and the second clock signal before the first transmission circuit is turned on by the second clock signal and the third clock signal.
    Type: Application
    Filed: June 3, 2021
    Publication date: July 28, 2022
    Inventors: Yung-Chen CHIEN, Xiangdong CHEN, Hui-Zhong ZHUANG, Tzu-Ying LIN, Jerry Chang Jui KAO, Lee-Chung LU
  • Publication number: 20220214712
    Abstract: A clock distribution system includes a clock mesh structure which has a plurality of first metal patterns extending along a first axis, a plurality of second metal patterns extending along a second axis, a plurality of third metal patterns extending along a third axis. The plurality of first metal patterns, the plurality of second metal patterns, and the plurality of third metal patterns are electrically coupled with each other. The second axis is transverse to the first axis. The third axis is oblique to both the first axis and the second axis.
    Type: Application
    Filed: January 4, 2021
    Publication date: July 7, 2022
    Inventors: Jerry Chang Jui KAO, Huang-Yu CHEN, Sheng-Hsiung CHEN, Jack LIU, Yung-Chen CHIEN, Wei-Hsiang MA, Chung-Hsing WANG
  • Publication number: 20220216270
    Abstract: An integrated circuit (IC) device includes a substrate and a circuit region over the substrate. The circuit region includes at least one active region extending along a first direction, at least one gate region extending across the at least one active region and along a second direction transverse to the first direction, and at least one first input/output (IO) pattern configured to electrically couple the circuit region to external circuitry outside the circuit region. The at least one first IO pattern extends along a third direction oblique to both the first direction and the second direction.
    Type: Application
    Filed: January 4, 2021
    Publication date: July 7, 2022
    Inventors: Meng-Kai HSU, Jerry Chang Jui KAO, Chin-Shen LIN, Ming-Tao YU, Tzu-Ying LIN, Chung-Hsing WANG
  • Patent number: 11362660
    Abstract: A circuit includes a level shifter circuit, an output circuit, an enable circuit, a first and a second feedback circuit. The level shifter circuit is coupled to a first voltage supply, and is configured to generate at least a first and a second signal responsive to at least the first enable signal or the first input signal. The output circuit is coupled to at least the level shifter circuit and the first voltage supply, and configured to receive the first and the second signal. The enable circuit is configured to generate a second enable signal responsive to the first enable signal. The first feedback circuit is configured to receive the first enable signal, the second enable signal and the first feedback signal. The second feedback circuit is configured to receive the first enable signal, the second enable signal and the second feedback signal.
    Type: Grant
    Filed: May 17, 2021
    Date of Patent: June 14, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yu-Lun Ou, Ji-Yung Lin, Yung-Chen Chien, Ruei-Wun Sun, Wei-Hsiang Ma, Jerry Chang Jui Kao, Shang-Chih Hsieh, Lee-Chung Lu
  • Patent number: 11355395
    Abstract: A semiconductor device includes several first cell rows extending in a first direction, each of the first cell rows having a first row height; several second cell rows extending in the first direction, each of the second cell rows having a second row height smaller than the first row height, wherein the first cell rows and the second cell rows are interlaced; a first cell arranged in a first row of the first cell rows; and at least one second cell arranged in at least one row of the second cell rows, wherein the at least one second cell abuts the first cell in a second direction different from the first direction, wherein the at least one second cell and at least one circuit component included in the first cell have the same operation configuration.
    Type: Grant
    Filed: May 22, 2020
    Date of Patent: June 7, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jerry Chang-Jui Kao, Hui-Zhong Zhuang, Li-Chung Hsu, Sung-Yen Yeh, Yung-Chen Chien, Jung-Chan Yang, Tzu-Ying Lin
  • Patent number: 11270052
    Abstract: A method includes: receiving a library associated with a cell; determining a plurality of candidate hold times for the cell; acquiring a plurality of candidate setup times corresponding to the plurality of candidate hold times, wherein a data delay associated with each of the candidate setup time fulfills a data delay constraint for the cell; adding the plurality of candidate setup times to the plurality of candidate hold times, respectively, to obtain a plurality of candidate time windows; and selecting a target time window having a minimal time span among the candidate time windows. At least one of the receiving, determining, acquiring, adding and selecting steps is conducted by at least one processor.
    Type: Grant
    Filed: September 15, 2020
    Date of Patent: March 8, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Chia Hao Tu, Hsueh-Chih Chou, Sang Hoo Dhong, Jerry Chang Jui Kao, Chi-Lin Liu, Cheng-Chung Lin, Shang-Chih Hsieh
  • Publication number: 20220067266
    Abstract: Standard cell libraries include one or more standard cells and one or more corresponding standard cell variations. The one or more standard cell variations are different from their one or more standard cells in terms of geometric shapes, locations of the geometric shapes, and/or interconnections between the geometric shapes. The exemplary systems and methods described herein selectively choose from among the one or more standard cells and/or the one or more standard cell variations to form an electronic architectural design for an electronic device. In some situations, some of the one or more standard cells are unable to satisfy one or more electronic design constraints imposed by a semiconductor foundry and/or semiconductor technology node when placed onto the electronic device design real estate. In these situations, the one or more standard cell variations corresponding to these standard cells are placed onto the electronic device design real estate.
    Type: Application
    Filed: November 10, 2021
    Publication date: March 3, 2022
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Sheng-Hsiung CHEN, Jerry Chang-Jui KAO, Fong-Yuan CHANG, Po-Hsiang HUANG, Shao-Huan WANG, XinYong WANG, Yi-Kan CHENG, Chun-Chen CHEN
  • Publication number: 20220067259
    Abstract: A layout method includes generating a design data comprising an electronic circuit, and generating a design layout by placing a first cell corresponding to the electronic circuit. The first cell includes a first source/drain region and a second source/drain region extending in a first direction in a first layer, a gate electrode extending in a second direction perpendicular to the first direction in a second layer, and a first conductive line arranged in a third layer over the second layer and electrically connected to one of the first source/drain region, the second source/drain region and the gate electrode. The first cell is defined by a left cell side and a right cell side. At least one of the left cell side, the right cell side, the gate electrode and the first conductive line extends in a third direction not parallel to the first and second directions.
    Type: Application
    Filed: August 31, 2020
    Publication date: March 3, 2022
    Inventors: POCHUN WANG, JERRY CHANG JUI KAO, JUNG-CHAN YANG, HUI-ZHONG ZHUANG, TZU-YING LIN, CHUNG-HSING WANG
  • Patent number: 11227084
    Abstract: A multi-bit standard cell embodied on a non-transitory computer-readable medium includes: a first logic cell with a first logic cell height measured from a first lower boundary to a first upper boundary of the first logic cell; and a second logic cell with a second logic cell height measured from a second lower boundary to a second upper boundary of the second logic cell, the second logic cell height different from the first logic cell height, and the second upper boundary attached to the first lower boundary. The first logic cell is arranged to perform a first logical function, the second logic cell is arranged to perform a second logical function, and the first logical function is the same as the second logical function.
    Type: Grant
    Filed: July 25, 2019
    Date of Patent: January 18, 2022
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Jerry Chang Jui Kao, Hui-Zhong Zhuang, Yung-Chen Chien, Ting-Wei Chiang, Chih-Wei Chang, Xiangdong Chen
  • Publication number: 20210391850
    Abstract: An integrated circuit disclosed here includes a first plurality of cell rows, a second plurality of cell rows, first and second clock inverters, and a plurality of flip-flops. The second plurality of cell rows are arranged abutting the first plurality of cell rows. A first number of fins in the first plurality of cell rows is different from a second number of fins in the second plurality of cell rows. The first and second clock inverters are arranged in the second plurality of cell rows. The plurality of flip-flops are arranged in the first plurality of cell rows and the second plurality of cell rows. The plurality of flip-flops include a first plurality of flip-flops configured to operate in response to the first clock and second clock signals.
    Type: Application
    Filed: June 12, 2020
    Publication date: December 16, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Po-Chun WANG, Hui-Zhong ZHUANG, Chih-Liang CHEN, Jerry Chang-Jui KAO, Tzu-Ying LIN
  • Publication number: 20210366774
    Abstract: A semiconductor device includes several first cell rows extending in a first direction, each of the first cell rows having a first row height; several second cell rows extending in the first direction, each of the second cell rows having a second row height smaller than the first row height, wherein the first cell rows and the second cell rows are interlaced; a first cell arranged in a first row of the first cell rows; and at least one second cell arranged in at least one row of the second cell rows, wherein the at least one second cell abuts the first cell in a second direction different from the first direction, wherein the at least one second cell and at least one circuit component included in the first cell have the same operation configuration.
    Type: Application
    Filed: May 22, 2020
    Publication date: November 25, 2021
    Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.
    Inventors: Jerry Chang-Jui KAO, Hui-Zhong ZHUANG, Li-Chung HSU, Sung-Yen YEH, Yung-Chen CHIEN, Jung-Chan YANG, Tzu-Ying LIN
  • Patent number: 11182533
    Abstract: Standard cell libraries include one or more standard cells and one or more corresponding standard cell variations. The one or more standard cell variations are different from their one or more standard cells in terms of geometric shapes, locations of the geometric shapes, and/or interconnections between the geometric shapes. The exemplary systems and methods described herein selectively choose from among the one or more standard cells and/or the one or more standard cell variations to form an electronic architectural design for an electronic device. In some situations, some of the one or more standard cells are unable to satisfy one or more electronic design constraints imposed by a semiconductor foundry and/or semiconductor technology node when placed onto the electronic device design real estate. In these situations, the one or more standard cell variations corresponding to these standard cells are placed onto the electronic device design real estate.
    Type: Grant
    Filed: June 25, 2020
    Date of Patent: November 23, 2021
    Inventors: Sheng-Hsiung Chen, Jerry Chang-Jui Kao, Fong-Yuan Chang, Po-Hsiang Huang, Shao-Huan Wang, XinYong Wang, Yi-Kan Cheng, Chun-Chen Chen
  • Publication number: 20210343715
    Abstract: A semiconductor device having a standard cell, includes a first power supply line, a second power supply line, a first gate-all-around field effect transistor (GAA FET) disposed over a substrate, and a second GAA FET disposed above the first GAA FET. The first power supply line and the second power supply line are located at vertically different levels from each other.
    Type: Application
    Filed: July 12, 2021
    Publication date: November 4, 2021
    Inventors: Guo-Huei WU, Jerry Chang-Jui KAO, Chih-Liang CHEN, Hui-Zhong ZHUANG, Jung-Chan YANG, Lee-Chung LU, Xiangdong CHEN
  • Publication number: 20210334447
    Abstract: Systems and methods for context aware circuit design are described herein. A method includes: identifying at least one cell to be designed into a circuit; identifying at least one context parameter having an impact to layout dependent effect of the circuit; generating, for each cell and for each context parameter, a plurality of abutment environments associated with the cell; estimating, for each cell and each context parameter, a sensitivity of at least one electrical property of the cell to the context parameter by generating a plurality of electrical property values of the cell under the plurality of abutment environments; and determining whether each context parameter is a key context parameter for a static analysis of the circuit, based on the sensitivity of the at least one electrical property of each cell and based on at least one predetermined threshold.
    Type: Application
    Filed: July 8, 2021
    Publication date: October 28, 2021
    Inventors: Li-Chung Hsu, Yen-Pin Chen, Sung-Yen Yeh, Jerry Chang-Jui Kao, Chung-Hsing Wang
  • Patent number: 11151297
    Abstract: A method includes positioning adjacent first through fourth active regions in a cell of an IC layout diagram, the first active region being a first type of an n-type or a p-type and corresponding to a first total number of fins, the second active region being a second type of the n-type or the p-type and corresponding to a second total number of fins, the third active region being the second type and corresponding to a third total number of fins, and the fourth active region being the first type and corresponding to a fourth total number of fins. Each of the first and second total numbers of fins is greater than each of the third and fourth total numbers of fins, and at least one of the positioning the first, second, third, or fourth active regions is performed by a processor.
    Type: Grant
    Filed: October 7, 2020
    Date of Patent: October 19, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Po-Chia Lai, Ming-Chang Kuo, Jerry Chang Jui Kao, Wei-Ling Chang, Wei-Ren Chen, Hui-Zhong Zhuang, Stefan Rusu, Lee-Chung Lu
  • Publication number: 20210294958
    Abstract: A logic circuit including first and second inverters, first and second NAND circuits, a transmission gate, and a transmission-gate-substitute (TGS) circuit, and wherein: for each of the first and second NAND circuits, a first input is configured to receive corresponding first and second data signals, and a second input is configured to receive an enable signal; the first inverter is configured to receive an output of the first NAND circuit; the transmission gate and the TGS circuit are arranged as a combination circuit which is configured to receive an output of the second NAND circuit as a data input, and outputs of the first inverter and the second NAND circuit as control inputs; the second inverter is configured to receive an output of the combination circuit; and an output of the second inverter represents one of an enable XOR (EXOR) function or an enable XNR (EXNR) function.
    Type: Application
    Filed: June 7, 2021
    Publication date: September 23, 2021
    Inventors: Chi-Lin LIU, Jerry Chang-Jui KAO, Wei-Hsiang MA, Lee-Chung LU, Fong-Yuan CHANG, Sheng-Hsiung CHEN, Shang-Chih HSIEH