Patents by Inventor Jerry Chang-Jui Kao

Jerry Chang-Jui Kao has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240250671
    Abstract: An integrated circuit (IC) device includes a master latch circuit having a data output, a slave latch circuit having a data input electrically coupled to the data output of the master latch circuit, and a clock circuit electrically coupled to the master latch circuit and the slave latch circuit. The slave latch circuit is physically between the master latch circuit and at least a part of the clock circuit.
    Type: Application
    Filed: April 2, 2024
    Publication date: July 25, 2024
    Inventors: Cheng-Yu LIN, Yung-Chen CHIEN, Jia-Hong GAO, Jerry Chang Jui KAO, Hui-Zhong ZHUANG
  • Patent number: 12047079
    Abstract: A flip-flop circuit includes a first inverter configured to receive a first clock signal and output a second clock signal, a second inverter configured to receive the second clock signal and output a third clock signal, a master stage, and a slave stage including a first feedback inverter and a first transmission gate. The first feedback inverter includes a first transistor configured to receive the first clock signal and a second transistor configured to receive the second clock signal, and the first transmission gate includes first and second input terminals configured to receive the second and third clock signals.
    Type: Grant
    Filed: April 18, 2023
    Date of Patent: July 23, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Yung-Chen Chien, Xiangdong Chen, Hui-Zhong Zhuang, Tzu-Ying Lin, Jerry Chang Jui Kao, Lee-Chung Lu
  • Patent number: 12040800
    Abstract: Circuits, systems, and methods are described herein for increasing a hold time of a master-slave flip-flop. A flip-flop includes circuitry configured to receive a scan input signal and generate a delayed scan input signal; a master latch configured to receive a data signal and the delayed scan input signal; and a slave latch coupled to the master latch, the master latch selectively providing one of the data signal or the delayed scan input signal to the slave latch based on a scan enable signal received by the master latch.
    Type: Grant
    Filed: December 13, 2022
    Date of Patent: July 16, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Seid Hadi Rasouli, Jerry Chang Jui Kao, Xiangdong Chen, Tzu-Ying Lin, Yung-Chen Chien, Shao-Lun Chien
  • Patent number: 12039242
    Abstract: A layout method includes generating a design data comprising an electronic circuit, and generating a design layout by placing a first cell corresponding to the electronic circuit. The first cell includes a first source/drain region and a second source/drain region extending in a first direction in a first layer, a gate electrode extending in a second direction perpendicular to the first direction in a second layer, and a first conductive line arranged in a third layer over the second layer and electrically connected to one of the first source/drain region, the second source/drain region and the gate electrode. The first cell is defined by a left cell side and a right cell side. At least one of the left cell side, the right cell side, the gate electrode and the first conductive line extends in a third direction not parallel to the first and second directions.
    Type: Grant
    Filed: August 31, 2020
    Date of Patent: July 16, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: Pochun Wang, Jerry Chang Jui Kao, Jung-Chan Yang, Hui-Zhong Zhuang, Tzu-Ying Lin, Chung-Hsing Wang
  • Publication number: 20240203997
    Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.
    Type: Application
    Filed: March 4, 2024
    Publication date: June 20, 2024
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Fong-yuan Chang, Chun-Chen Chen, Po-Hsiang Huang, Lee-Chung Lu, Chung-Te Lin, Jerry Chang Jui Kao, Sheng-Hsiung Chen, Chin-Chou Liu
  • Publication number: 20240201727
    Abstract: A clock distribution system includes a clock mesh structure which has first metal patterns extending along a first axis, second metal patterns extending along a second axis, third metal patterns extending along a third axis. The first metal patterns, second metal patterns, and third metal patterns are electrically coupled with each other. The second axis is transverse to the first axis. The third axis is oblique to both the first axis and the second axis. The first metal patterns include a main first metal pattern, and other first metal patterns. The second metal patterns include a main second metal pattern, and other second metal patterns. The third metal patterns include a main third metal pattern, and other third metal patterns.
    Type: Application
    Filed: February 1, 2024
    Publication date: June 20, 2024
    Inventors: Jerry Chang Jui KAO, Huang-Yu CHEN, Sheng-Hsiung CHEN, Jack LIU, Yung-Chen CHIEN, Wei-Hsiang MA, Chung-Hsing WANG
  • Patent number: 12015409
    Abstract: In some embodiments, a flip-flop is disposed as an integrated circuit layout on a flip-flop region of a semiconductor substrate. The flip-flop includes a first clock inverter circuit that resides within the flip-flop region, and a second clock inverter circuit residing within the flip-flop region. The first clock inverter circuit and the second clock inverter circuit are disposed on a first line. Master switch circuitry is made up of a first plurality of devices which are circumscribed by a master switch perimeter that resides within the flip-flop region of the integrated circuit layout. The master switch circuitry and the first clock inverter circuit are disposed on a second line perpendicular to the first line. Slave switch circuitry is operably coupled to an output of the master switch circuitry. The slave switch circuitry is made up of a third plurality of devices that are circumscribed by a slave switch perimeter.
    Type: Grant
    Filed: June 4, 2021
    Date of Patent: June 18, 2024
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chi-Lin Liu, Ting-Wei Chiang, Jerry Chang-Jui Kao, Hui-Zhong Zhuang, Lee-Chung Lu, Shang-Chih Hsieh, Che Min Huang
  • Patent number: 12015410
    Abstract: A semiconductor device includes a first dummy group having a first set of dummy transistors; a first delay cell having a first set of active transistors; a second delay cell having a second set of active transistors; a second dummy group having a second set of dummy transistors; and relative to a first direction the first and second dummy groups and the first and second delay cells being arranged in a first sequence arranged as the first dummy group, the first delay cell, the second delay cell, and the second dummy group; and the first and second delay cells being free from having another dummy group therebetween.
    Type: Grant
    Filed: August 26, 2022
    Date of Patent: June 18, 2024
    Assignees: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD., TSMC NANJING COMPANY, LIMITED
    Inventors: Huaixin Xian, Longbiao Lei, Sinpei Goa, Zhang-Ying Yan, Qingchao Meng, Jerry Chang Jui Kao
  • Patent number: 12009824
    Abstract: A clock gating circuit includes a NOR logic gate, a transmission gate, a cross-coupled pair of transistors, and a first transistor. The NOR logic gate is coupled to a first node, and receives a first and a second enable signal, and outputs a first control signal. The transmission gate is coupled between the first and a second node, and receives the first control signal, an inverted clock input signal and a clock output signal. The cross-coupled pair of transistors is coupled between the second node and an output node, and receives at least a second control signal. The first transistor includes a first gate terminal configured to receive the inverted clock input signal, a first drain terminal coupled to the output node, and a first source terminal coupled to a reference voltage supply. The first transistor adjusts the clock output signal responsive to the inverted clock input signal.
    Type: Grant
    Filed: December 13, 2022
    Date of Patent: June 11, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Seid Hadi Rasouli, Jerry Chang Jui Kao, Xiangdong Chen, Tzu-Ying Lin, Yung-Chen Chien, Hui-Zhong Zhuang, Chi-Lin Liu
  • Patent number: 12003239
    Abstract: A flip-flop circuit configured to latch an input signal to an output signal is disclosed. The circuit includes a first latch circuit; and a second latch circuit coupled to the first latch circuit. In some embodiments, in response to a clock signal, the first and second latch circuits are complementarily activated so as to latch the input signal to the output signal, and the first and second latch circuits each comprises at most two transistors configured to receive the clock signal.
    Type: Grant
    Filed: October 28, 2022
    Date of Patent: June 4, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Po-Chia Lai, Meng-Hung Shen, Chi-Lin Liu, Stefan Rusu, Yan-Hao Chen, Jerry Chang-Jui Kao
  • Patent number: 11995390
    Abstract: A circuit includes a first transistor, a second type-one transistor, a first type-two transistor, a third type-one transistor, a fourth type-one transistor, and a fifth type-one transistor. The first type-one transistor has a gate configured to have a first supply voltage of a first power supply. The first type-two transistor has a gate configured to have a second supply voltage of the first power supply. The third type-one transistor has a first active-region conductively connected with an active-region of the first type-one transistor. Third type-one transistor has a second active-region and a gate conductively connected to each other. The fifth type-one transistor has a first active-region conductively connected with the gate of the third type-one transistor and has a second active-region configured to have a first supply voltage of a second power supply. The fifth type-one transistor is configured to be at a conducting state.
    Type: Grant
    Filed: December 9, 2022
    Date of Patent: May 28, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Chi-Yu Lu, Ting-Wei Chiang, Hui-Zhong Zhuang, Jerry Chang Jui Kao, Pin-Dai Sue, Jiun-Jia Huang, Yu-Ti Su, Wei-Hsiang Ma
  • Publication number: 20240160826
    Abstract: The routing of conductors in the conductor layers in an integrated circuit are routed using mixed-Manhattan-diagonal routing. Various techniques are disclosed for selecting a conductor scheme for the integrated circuit prior to fabrication of the integrated circuit. Techniques are also disclosed for determining the supply and/or the demand for the edges in the mixed-Manhattan-diagonal routing.
    Type: Application
    Filed: November 17, 2023
    Publication date: May 16, 2024
    Inventors: Sheng-Hsiung Chen, Huang-Yu Chen, Chung-Hsing Wang, Jerry Chang Jui Kao
  • Patent number: 11983479
    Abstract: A method of fabricating an integrated circuit includes placing a first set of conductive feature patterns on a first level, placing a second set of conductive feature patterns on a second level, placing a first set of via patterns between the second set of conductive feature patterns and the first set of conductive feature patterns, placing a third set of conductive feature patterns on a third level different from the first level and the second level, placing a second set of via patterns between the third set of conductive feature patterns and the second set of conductive feature patterns, and manufacturing the integrated circuit based on at least one of the above patterns of the integrated circuit.
    Type: Grant
    Filed: August 10, 2022
    Date of Patent: May 14, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Jung-Chan Yang, Ting-Wei Chiang, Jerry Chang-Jui Kao, Hui-Zhong Zhuang, Lee-Chung Lu, Li-Chun Tien, Meng-Hung Shen, Shang-Chih Hsieh, Chi-Yu Lu
  • Patent number: 11979158
    Abstract: An integrated circuit (IC) device includes a master latch circuit having a first clock input and a data output, a slave latch circuit having a second clock input and a data input electrically coupled to the data output of the master latch circuit, and a clock circuit. The clock circuit is electrically coupled to the first clock input by a first electrical connection configured to have a first time delay between the clock circuit and the first clock input. The clock circuit is electrically coupled to the second clock input by a second electrical connection configured to have a second time delay between the clock circuit and the second clock input. The first time delay is longer than the second time delay.
    Type: Grant
    Filed: May 26, 2022
    Date of Patent: May 7, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Cheng-Yu Lin, Yung-Chen Chien, Jia-Hong Gao, Jerry Chang Jui Kao, Hui-Zhong Zhuang
  • Patent number: 11943939
    Abstract: An integrated circuit (IC) device includes a substrate and a circuit region over the substrate. The circuit region includes at least one active region extending along a first direction, at least one gate region extending across the at least one active region and along a second direction transverse to the first direction, and at least one first input/output (IO) pattern configured to electrically couple the circuit region to external circuitry outside the circuit region. The at least one first IO pattern extends along a third direction oblique to both the first direction and the second direction.
    Type: Grant
    Filed: January 4, 2021
    Date of Patent: March 26, 2024
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.
    Inventors: Meng-Kai Hsu, Jerry Chang Jui Kao, Chin-Shen Lin, Ming-Tao Yu, Tzu-Ying Lin, Chung-Hsing Wang
  • Publication number: 20240095434
    Abstract: A method performed by at least one processor includes the following steps: generating a layout of an integrated circuit (IC), the layout comprising a cell and a layout context in a vicinity of the cell; receiving from a library a set of context groups and a set of timing tables, wherein each of the context groups is associated with one of the set of timing tables; determining a representative context group for the cell through comparing the layout context of the cell with the set of context groups; and performing a timing analysis on the layout according to a representative timing table associated with the representative context group for the cell.
    Type: Application
    Filed: November 23, 2023
    Publication date: March 21, 2024
    Inventors: ZHE-WEI JIANG, JERRY CHANG JUI KAO, SUNG-YEN YEH, LI CHUNG HSU
  • Publication number: 20240097661
    Abstract: A scan flip-flop circuit includes a selection circuit including first and second input terminals coupled to first and second I/O nodes, a flip-flop circuit coupled to the selection circuit, a first driver coupled between the flip-flop circuit and the first I/O node, and a second driver coupled between the flip-flop circuit and the second I/O node. The selection circuit and drivers receive a scan direction signal. In response to a first logic level of the scan direction signal, the selection circuit responds to a first signal received at the first input terminal, and the second driver outputs a second signal responsive to a flip-flop circuit output signal. In response to a second logic level of the scan direction signal, the selection circuit responds to a third signal received at the second input terminal, and the first driver outputs a fourth signal responsive to the flip-flop circuit output signal.
    Type: Application
    Filed: January 9, 2023
    Publication date: March 21, 2024
    Inventors: Huaixin XIAN, Tzu-Ying LIN, Liu HAN, Jerry Chang Jui KAO, Qingchao MENG, Xiangdong CHEN
  • Publication number: 20240096803
    Abstract: An integrated circuit includes a device, a first interconnect structure disposed above the device and a second interconnect structure positioned below the device. The first interconnect structure includes multiple frontside metal layers. The second interconnect structure includes multiple backside metal layers, where each backside metal layer includes metal conductors routed according to diagonal routing. In some embodiments, a backside interconnect structure can include another backside metal layer that includes metal conductors routed according to mixed-Manhattan-diagonal routing. A variety of techniques can be used to route signals between metal conductors in the backside interconnect structure and cells on one or more frontside metal layers.
    Type: Application
    Filed: November 22, 2023
    Publication date: March 21, 2024
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Sheng-Hsiung Chen, Jerry Chang Jui Kao, Kuo-Nan Yang, Jack Liu
  • Patent number: 11935894
    Abstract: An integrated circuit device includes a device layer having devices spaced in accordance with a predetermined device pitch, a first metal interconnection layer disposed above the device layer and coupled to the device layer, and a second metal interconnection layer disposed above the first metal interconnection layer and coupled to the first metal interconnection layer through a first via layer. The second metal interconnection layer has metal lines spaced in accordance with a predetermined metal line pitch, and a ratio of the predetermined metal line pitch to predetermined device pitch is less than 1.
    Type: Grant
    Filed: November 4, 2022
    Date of Patent: March 19, 2024
    Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Fong-yuan Chang, Chun-Chen Chen, Po-Hsiang Huang, Lee-Chung Lu, Chung-Te Lin, Jerry Chang Jui Kao, Sheng-Hsiung Chen, Chin-Chou Liu
  • Publication number: 20240086601
    Abstract: A method of generating a first performance-data-library (for a standard-cell-library) includes: for each standard cell that includes multiple gates, sorting the gates into groups including searching for matched ones amongst the gates (matched gates), grouping corresponding matched gates into corresponding multiple member-gates, and (for unmatched ones of the gates having no other matched gate (unmatched gates)), grouping the unmatched gates into corresponding single-member groups; for each standard cell, generating a corresponding first volume of performance data including, for each group, discretely calculating the first volume of performance data, mapping the volume of performance data to the subject gate in the group, and, for each multimember group, mapping the volume of performance data to non-subject gates; and basing the first performance-data-library at least in part on the first volumes of performance data.
    Type: Application
    Filed: January 23, 2023
    Publication date: March 14, 2024
    Inventors: Johnny Chiahao LI, Tzu-Hsuan HO, Pei-Wei LAO, Bing-Hsiu WU, Jerry Chang Jui KAO