Abstract: Methods for setting a resistance include applying a voltage across a memristive device, that exceeds a threshold based on a difference in chemical potential between a first material and a second material, to change a resistance of the memristive device. The memristive device includes a barrier layer of the second material that is formed between two metastable layers of the first material.

Abstract: Memristive devices and methods for setting the resistance of a memristive device include a first mixed conducting layer formed from a first material having a resistance that changes depending on an ion concentration and having multiple coexisting phases from concentration-dependent metastability. A second metastable, mixed conducting layer is formed from the first material. A barrier layer between the first conductor layer and the second conductor layer is formed from a second mixed conducting material having a chemical potential that prevents thermal ion diffusion between the first and second layer. The barrier layer provides an electrical threshold, above which ions are transferred between the first and second layer and below which the resistance of the device is read.

Abstract: Memristive devices and methods for setting the resistance of a memristive device include a first mixed conducting layer formed from a first material having a resistance that changes depending on an ion concentration and having multiple coexisting phases from concentration-dependent metastability. A second metastable, mixed conducting layer is formed from the first material. A barrier layer between the first conductor layer and the second conductor layer is formed from a second mixed conducting material having a chemical potential that prevents thermal ion diffusion between the first and second layer. The barrier layer provides an electrical threshold, above which ions are transferred between the first and second layer and below which the resistance of the device is read.