Abstract: A method for forming patterned metal layers to a higher degree of precision than if chemical etching were used. A thin metal layer carried on a thicker metal carrier layer is patterned by laser ablation. Then the thin metal layer, and with it the carrier layer, is laminated to a dielectric layer. Finally the carrier layer is removed, leaving the patterned thin metal layer bonded to the dielectric layer.

Abstract: An integrated getter structure and a method for its formation and installation in a circuit module enclosure (24). The integrated structure includes a hydrogen getter structure (10) and selected quantities of a material (20) that is formulated to provide both a particle getter function and an RF absorber function. In one embodiment, the material (20) is placed in discrete quantities over the hydrogen getter structure (10). In another embodiment, the hydrogen getter structure (10) is formed over a sheet of the material (20) and is provided with apertures (30) to expose the material (20).