Abstract: A method is disclosed for forming a patterned oxide superconducting film wherein a selected region of a ternary metal oxide superconducting film is irradiated in a controlled atmosphere with photons so as to become non-superconductive.

Abstract: A method for assembling and interconnecting large, high-density circuits from separately fabricated components, where conventional preassembly device testing, and conventional production techniques, can be employed in an uncomplicated process. A plurality of semiconductor chips are applied connection-side down to a temporary soluble substrate and then encapsulated. The temporary soluble substrate is then dissolved, exposing the connection side of the chips, to which electrical connections can then be made.

Abstract: A laser induced direct writing pyrolysis of a refractory metal or metal silicide on substrates is described. Typical reactants comprise flowing WF.sub.6, MoF.sub.6 or TiCl.sub.4 with SiH.sub.4 and an inert gas, such as Argon. A preferable substrate surface is a polyimide film. The refractory metal film may comprise low resistivity W, M, or Ti, or silicides thereof, having a predetermined resistance depending on the relative ratio of reactants. The invention is useful, inter alia, for repair of defective circuit interconnects, and formation of interconnects or resistors on substrates.

Abstract: Thin films (e.g. less than 100 nm thick) of a metal oxide material can be deposited on a variety of hydrophilic substrates by hydrolysis. Deposition is achieved by reacting a vapor of an appropriate metal-containing compound with water at or near the substrate's surface. The resulting deposited film can serve a variety of uses, for example, as a photo-resist in micro-electronics or in any area where protective films are useful, such as the passivation of ternary metal oxide superconductors.

Abstract: A laser induced direct writing pyrolysis of a refractory metal or metal silicide on substrates is described. Typical reactants comprise flowing WF.sub.6, MoF.sub.6 or TiCl.sub.4 with SiH.sub.4 and an inert gas, such as Argon. A preferable substrate surface is a polyimide film. The refractory metal film may comprise low resistivity W, M, or Ti, or silicides thereof, having a predetermined resistance depending on the relative ratio of reactants. The invention is useful, inter alia, for repair of defective circuit interconnects, and formation of interconnects or resistors on substrates.

Abstract: A method for laser induced conversion of large predefined areas of amorphous or polycrystalline semiconductor material, upon a substrate, into single crystal areas by using an infrared laser energy source to cause the bulk of heating to occur in the substrate and not in the predefined areas so that the areas are heated to melting by the substrate. The substrate comprises a material which is highly absorptive of the laser wavelength and the predefined areas comprise a material substantially transparent to laser wavelength, and the substrate and areas have different refractive indexes.