Abstract: A method comprising forming a coating solution which comprises a matrix precursor material, a porogen material and a solvent, by selecting a polyarylene matrix precursor material which cross-links to form a matrix with a calculated cross-link moeity density of at least 0.003 moles/ml, and reacting the polyarylene matrix precursor material with a porogen which is linear oligomer or polymer which is formed from monomers comprising alkenyl or alkynyl functional monomers, which has reactive end groups and a weight average molecular weight in the range of less than about 5000, where the porogen is present in amounts in the range of about 10 to less than 50 percent by weight based on total weight of porogens and matrix precursor material.

Abstract: A compound comprising i) one or more dienophile groups (A-functional groups), ii) one or more ring structures comprising two conjugated carbon-to-carbon double bonds and a leaving group L (B-functional groups), and iii) one or more addition polymerizable, telechelic, or graftable functional groups, excluding groups capable of cycloaddition reactions with acetylenic- or conjugated diene functionality (C?-functional groups), characterized in that the A-functional group of one monomer is capable of reaction under cycloaddition reaction conditions with the B-functional group of a second monomer to thereby form a polymer.

Abstract: A compound useful in the formation of polymeric dielectric films for semiconductor devices and the resulting cured films and devices, said compound comprising i) three or more dienophile groups (A-functional groups) and ii) a single ring structure comprising two conjugated carbon-to-carbon double bonds and a leaving group L (collectively referred to as a B-functional group), characterized in that one A-functional group of one molecule of the compound is capable of reaction under cycloaddition reaction conditions with the B-functional group of a second molecule and elimination of the leaving group L, to thereby form a polymer.

Abstract: The present invention is a method which provides flexibility and convenience in integration of porous dielectric materials without any substantial sacrifice in quality of the porous dielectric material formed during the process. This method enables one to create multilayer stacks that include embedded porous layers without having to remove the substrate being coated from the spin track between applications of the various layers and without deterioration in pore morphology in the porous layers.