Abstract: Systems and methods may generally be used for security debt management. An example method may include identifying a security risk assessment including at least one security defect of an application, a set of applications, an enterprise, etc. The method may include determining, for example using a model, a security debt score for the application based on the security risk assessment. The method may include comparing the security debt score to a security debt threshold for the application, and determining, for a particular time period, a minimum remediation for the at least one security defect of the application to reduce the security debt score. In some examples, the minimum remediation is based on a minimum remediation due during the particular time period and the security debt score.

Abstract: A method may include querying, using a processing unit, a project data store with a project identifier; in response to the querying, receiving a functional requirement of a project data structure stored in the project data store as associated with the project identifier; inputting, using the processing unit, the functional requirement into a trained machine learning model, the trained machine learning model configured with output nodes corresponding to a set of security concerns; after the inputting, accessing output values from the output nodes; and adding, using the processing unit, a security concern of the set of security concerns to the project data structure based on the output values.

Abstract: A method may include querying, using a processing unit, a project data store with a project identifier; in response to the querying, receiving a functional requirement of a project data structure stored as associated with the project identifier; inputting, using the processing unit, the functional requirement into a trained machine learning model, the machine learning model configured with output nodes corresponding to a set of requirement classifications; after the inputting, accessing, using the processing unit, output values of the output nodes; and adding, using the processing unit, a requirement classification of the set of requirement classifications based on the output values to the project data structure.

Abstract: A structure for an III-V integrated circuit includes an integrated depletion and enhancement mode gallium nitride high electron mobility transistors (HEMTs). The structure includes a first, depletion mode HEMT having a first source, a first drain and a first fieldplate gate between the first source and the first drain, and a second, enhancement mode HEMT having a second source and a second drain. The second HEMT also includes a gallium nitride (GaN) gate and a second fieldplate gate between the second source and the second drain. The second fieldplate gate of the second HEMT may be closer to the second drain than the GaN gate. The structure provides a reliable, low leakage, high voltage depletion mode HEMT (e.g., with operating voltages of greater than 100V, but with a pinch-off voltage of less than 6 Volts) integrated with a gallium nitride (GaN) gate-based enhancement mode HEMT.

Abstract: A closed loop treatment device including a base housing to support a first reservoir, the first reservoir configured to store a first fluid, a sensor insertion mechanism to insert a sensor into a user to enable monitoring of the user's body signals, and a first rotatable shaft member configured to rotate to pull a first plunger in the first reservoir, the first plunger connected to the first rotatable shaft by a first flexible member, wherein a rotation of the first rotatable shaft member delivers an amount of the first fluid to the user.

Abstract: A transistor may include a buffer layer, source and drain contacts on the buffer layer, a barrier layer on the buffer layer, a conductive member on the barrier layer, a dielectric stack, and a gate metal. The barrier layer may be between the source and drain contacts. The conductive member may include a p-doped III-V compound. The dielectric stack may be on the barrier layer and on the conductive member. The dielectric stack may include a first dielectric layer and a second dielectric layer on the first dielectric layer. First and second trenches may extend through the dielectric stack to the conductive member and to the first dielectric layer, respectively. The gate metal may be on the dielectric stack, and may contact the conductive member through the first trench and may contact the first dielectric layer through the second trench.

Abstract: Structures for a laterally-diffused metal-oxide-semiconductor device and methods of forming a structure for a laterally-diffused metal-oxide-semiconductor device. The structure comprises a semiconductor substrate including a first well, a second well positioned within the first well, a source region positioned in the first well, and a drain region positioned in the second well. The first well has a first conductivity type, and the second well, the source region, and the drain region have a second conductivity type opposite to the first conductivity type. The structure further comprises a field plate over the semiconductor substrate and a contact connecting the field plate to the drain region. The field plate is positioned to overlap with the drain region and with a portion of the second well adjacent to the drain region. The contact and the field plate comprise the same metal.

Abstract: A treatment system configured to treat a disease using a first therapeutic fluid, the treatment system including a base housing, a first reservoir configured to store a first therapeutic fluid disposed within the base housing, a first plunger disposed within the first reservoir, a first rotatable shaft member configured to rotate within the base housing, and a first flexible member having a first end coupled to the first plunger and a second end coupled to the first rotatable shaft member, wherein the first rotatable shaft member is configured to shorten a length of the first flexible member to deliver the first therapeutic fluid from the first reservoir.

Abstract: An electrostatic discharge (ESD) protection device is provided. The ESD protection device includes a substrate, an active region, a first terminal region, and a second terminal region. The substrate includes dopants having a first dopant conductivity. The active region is arranged over the substrate and has an upper surface. The first terminal region and the second terminal region are arranged in the active region laterally spaced apart from each other. The first terminal region and the second terminal region each include a well region having dopants of the first dopant conductivity and a first doped region arranged in the well region. The first doped region includes dopants having a second dopant conductivity.

Abstract: A method of inserting a cannula and a sensor into a user using a cannula and sensor insertion mechanism, the method includes holding the cannula in a first pre-insertion position with a trigger arm, releasing the trigger arm such that a cannula insertion spring moves the cannula from the first pre-insertion position to a second post-insertion position, inserting the introducer needle and the cannula into the user, and retracting the introducer needle from within the cannula with a needle retraction spring.

Abstract: An electrostatic discharge (ESD) protection device is provided. The ESD protection device includes a substrate, an active region, a first terminal region, and a second terminal region. The substrate includes dopants having a first dopant conductivity. The active region is arranged over the substrate and has an upper surface. The first terminal region and the second terminal region are arranged in the active region laterally spaced apart from each other. The first terminal region and the second terminal region each include a well region having dopants of the first dopant conductivity and a first doped region arranged in the well region. The first doped region includes dopants having a second dopant conductivity.

Abstract: A transistor device may be provided, including a substrate; a buffer layer arranged over the substrate; a source terminal, a drain terminal, and a gate terminal arranged over the buffer layer; a barrier layer arranged over the buffer layer; and a passivation layer arranged over the barrier layer. The gate terminal may be arranged laterally between the source terminal and the drain terminal, the barrier layer may include a recess laterally between the gate terminal and the drain terminal, a part of the gate terminal may be arranged over the passivation layer and the passivation layer may extend into the recess of the barrier layer.

Abstract: A transistor may include a buffer layer, source and drain contacts on the buffer layer, a barrier layer on the buffer layer, a conductive member on the barrier layer, a dielectric stack, and a gate metal. The barrier layer may be between the source and drain contacts. The conductive member may include a p-doped III-V compound. The dielectric stack may be on the barrier layer and on the conductive member. The dielectric stack may include a first dielectric layer and a second dielectric layer on the first dielectric layer. First and second trenches may extend through the dielectric stack to the conductive member and to the first dielectric layer, respectively. The gate metal may be on the dielectric stack, and may contact the conductive member through the first trench and may contact the first dielectric layer through the second trench.

Abstract: A transistor device may be provided, including a substrate; a buffer layer arranged over the substrate; a source terminal, a drain terminal, and a gate terminal arranged over the buffer layer; a barrier layer arranged over the buffer layer; and a passivation layer arranged over the barrier layer. The gate terminal may be arranged laterally between the source terminal and the drain terminal, the barrier layer may include a recess laterally between the gate terminal and the drain terminal, a part of the gate terminal may be arranged over the passivation layer and the passivation layer may extend into the recess of the barrier layer.

Abstract: A treatment system configured to treat a disease using a first therapeutic fluid, the treatment system including a base housing, a first reservoir configured to store a first therapeutic fluid disposed within the base housing, a first plunger disposed within the first reservoir, a first rotatable shaft member configured to rotate within the base housing, and a first flexible member having a first end coupled to the first plunger and a second end coupled to the first rotatable shaft member, wherein the first rotatable shaft member is configured to shorten a length of the first flexible member to deliver the first therapeutic fluid from the first reservoir.

Abstract: A treatment system configured to treat a condition using a first fluid, the treatment system including a first reservoir configured to store a first fluid, a cannula insertion mechanism configured to insert a cannula into a user, the cannula in fluid communication with the first reservoir, a first rotatable shaft member configured to pull a first plunger disposed within the first reservoir and coupled to the first rotatable shaft member by a first flexible member, and a drive mechanism having a first expandable member configured to move from a first position to a second position to rotate the first rotatable shaft member to deliver the first fluid to the user through the cannula.

Abstract: A treatment system configured to treat a condition using a first fluid, the treatment system including a first reservoir configured to store a first fluid, a cannula insertion mechanism configured to insert a cannula into a user, the cannula in fluid communication with the first reservoir, a first rotatable shaft member configured to pull a first plunger disposed within the first reservoir and coupled to the first rotatable shaft member by a first flexible member, and a drive mechanism having a first expandable member configured to move from a first position to a second position to rotate the first rotatable shaft member to deliver the first fluid to the user through the cannula.

Abstract: In one embodiment, a system for simulating emergency events includes: a signal generator operatively coupleable to one or more detectors; and a controller operably coupled to the signal generator and configured to cause the signal generator to: generate one or more synthetic signals based at least in part on data comprising one or more of: trainee identity, trainee role, synthesized data, and one or more measurements taken during a simulation; and communicate the synthetic signal(s) to the detector(s) by injecting the synthetic signals) directly into a position of a receive path of the detector(s) that is upstream of signal processing electronics of the detector(s) and downstream of a sensor of the detector(s). The synthetic signal(s) is/are waveform signals representative of at least one emergency event; and the synthetic signahs) is/are utilized to mimic conditions during emergency event(s) and under particular emergency conditions. Corresponding methods and computer program prodcuts are disclosed.

Abstract: In one embodiment, a system includes a signal generator operatively coupleable to one or more detectors; and a controller, the controller being both operably coupled to the signal generator and configured to cause the signal generator to: generate one or more signals each signal being representative of at least one emergency event; and communicate one or more of the generated signal(s) to a detector to which the signal generator is operably coupled. In another embodiment, a method includes: receiving data corresponding to one or more emergency events; generating at least one signal based on the data; and communicating the generated signal(s) to a detector.

Abstract: The invention provides a process for making a heavy hydrocarbon feed pipeline transportable, said process including blending the heavy hydrocarbon feed with a diluent including a hydrocarbon stream having at least 0.5% by mass of a C4 or lighter hydrocarbon component, said diluent having less than 2% by volume aromatics, wherein the viscosity of the heavy hydrocarbon feed and diluent blend is below 500 cSt at 7.5° C. which is within pipeline transportable limits.