Patents by Inventor Jerry M. Olson
Jerry M. Olson has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 8952354Abstract: A multi junction photovoltaic cell for converting light into electrical energy, comprising a substrate (3) having a surface (31), wherein a region (4) at the surface (31) of the substrate (3) is doped such that a first p-n junction is formed in the substrate (3). The photovoltaic cell has a nanowire (2) that is arranged on the surface (31) of the substrate (3) at a position where the doped region (4) is located in the substrate (3), such that a second p-n junction is formed at the nanowire (2) and in series connection with the first p-n junction.Type: GrantFiled: April 13, 2010Date of Patent: February 10, 2015Assignee: Sol Voltaics ABInventor: Jerry M. Olson
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Publication number: 20120032148Abstract: A multi junction photovoltaic cell for converting light into electrical energy, comprising a substrate (3) having a surface (31), wherein a region (4) at the surface (31) of the substrate (3) is doped such that a first p-n junction is formed in the substrate (3). The photovoltaic cell has a nanowire (2) that is arranged on the surface (31) of the substrate (3) at a position where the doped region (4) is located in the substrate (3), such that a second p-n junction is formed at the nanowire (2) and in series connection with the first p-n junction.Type: ApplicationFiled: April 13, 2010Publication date: February 9, 2012Applicant: SOL VOLTAICS ABInventor: Jerry M. Olson
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Patent number: 7229498Abstract: Nanostructures (18) and methods for production thereof by phase separation during metal organic vapor-phase epitaxy (MOVPE). An embodiment of one of the methods may comprise providing a growth surface in a reaction chamber and introducing a first mixture of precursor materials into the reaction chamber to form a buffer layer (12) thereon. A second mixture of precursor materials may be provided into the reaction chamber to form an active region (14) on the buffer layer (12), wherein the nanostructure (18) is embedded in a matrix (16) in the active region (14). Additional steps are also disclosed for preparing the nanostructure (18) product for various applications.Type: GrantFiled: October 29, 2002Date of Patent: June 12, 2007Assignee: Midwest Research InstituteInventors: Andrew G. Norman, Jerry M. Olson
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Patent number: 6281426Abstract: A multi-junction, monolithic, photovoltaic solar cell device is provided for converting solar radiation to photocurrent and photovoltage with improved efficiency. The solar cell device comprises a plurality of semiconductor cells, i.e., active p/n junctions, connected in tandem and deposited on a substrate fabricated from GaAs or Ge. To increase efficiency, each semiconductor cell is fabricated from a crystalline material with a lattice constant substantially equivalent to the lattice constant of the substrate material. Additionally, the semiconductor cells are selected with appropriate band gaps to efficiently create photovoltage from a larger portion of the solar spectrum. In this regard, one semiconductor cell in each embodiment of the solar cell device has a band gap between that of Ge and GaAs.Type: GrantFiled: July 13, 2000Date of Patent: August 28, 2001Assignee: Midwest Research InstituteInventors: Jerry M. Olson, Sarah R. Kurtz, Daniel J. Friedman
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Patent number: 5342453Abstract: A high-efficiency single heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. The conversion effiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the emitter layer.Type: GrantFiled: November 13, 1992Date of Patent: August 30, 1994Assignee: Midwest Research InstituteInventor: Jerry M. Olson
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Patent number: 5316593Abstract: A high-efficiency heterojunction solar cell wherein a thin emitter layer (preferably Ga.sub.0.52 In.sub.0.48 P) forms a heterojunction with a GaAs absorber layer. A passivating window layer of defined composition is disposed over the emitter layer. The conversion efficiency of the solar cell is at least 25.7%. The solar cell preferably includes a passivating layer between the substrate and the absorber layer. An anti-reflection coating is preferably disposed over the window layer.Type: GrantFiled: November 16, 1992Date of Patent: May 31, 1994Assignee: Midwest Research InstituteInventors: Jerry M. Olson, Sarah R. Kurtz
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Patent number: 5223043Abstract: The efficiency of a two-junction (cascade) tandem photovoltaic device is improved by adjusting (decreasing) the top cell thickness to achieve current matching. An example of the invention was fabricated out of Ga.sub.0.52 In.sub.0.48 P and GaAs. Additional lattice-matched systems to which the invention pertains include Al.sub.x Ga.sub.1-x /GaAS (x= 0.3-0.4), GaAs/Ge and Ga.sub.y In.sub.l-y P/Ga.sub.y+0.5 In.sub.0.5-y As (0<y<5).Type: GrantFiled: May 11, 1992Date of Patent: June 29, 1993Assignee: The United States of America as represented by the United States Department of EnergyInventors: Jerry M. Olson, Sarah R. Kurtz
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Patent number: 5166761Abstract: A multiple wavelength LED having a monolithic cascade cell structure comprising at least two p-n junctions, wherein each of said at least two p-n junctions have substantially different band gaps, and electrical connector means by which said at least two p-n junctions may be collectively energized; and wherein said diode comprises a tunnel junction or interconnect.Type: GrantFiled: April 1, 1991Date of Patent: November 24, 1992Assignee: Midwest Research InstituteInventors: Jerry M. Olson, Sarah R. Kurtz
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Patent number: 4667059Abstract: A multijunction (cascade) tandem photovoltaic solar cell device is fabricated of a Ga.sub.x In.sub.1-x P (0.505.ltoreq.X.ltoreq.0.515) top cell semiconductor lattice matched to a GaAs bottom cell semiconductor at a low-resistance heterojunction, preferably a p+/n+ heterojunction between the cells. The top and bottom cells are both lattice matched and current matched for high efficiency solar radiation conversion to electrical energy.Type: GrantFiled: October 22, 1985Date of Patent: May 19, 1987Assignee: The United States of America as represented by the United States Department of EnergyInventor: Jerry M. Olson
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Patent number: 4481232Abstract: A method for producing high purity silicon includes forming a copper silie alloy and positioning the alloy within an enclosure. A filament member is also placed within the enclosure opposite the alloy. The enclosure is then filled with a chemical vapor transport gas adapted for transporting silicon. Finally, both the filament member and the alloy are heated to temperatures sufficient to cause the gas to react with silicon at the alloy surface and deposit the reacted silicon on the filament member. In addition, an apparatus for carrying out this method is also disclosed.Type: GrantFiled: May 27, 1983Date of Patent: November 6, 1984Assignee: The United States of America as represented by the Department of EnergyInventor: Jerry M. Olson
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Patent number: 4448651Abstract: A process for producing silicon includes forming an alloy of copper and silicon and positioning the alloy in a dried, molten salt electrolyte to form a solid anode structure therein. An electrically conductive cathode is placed in the electrolyte for plating silicon thereon. The electrolyte is then purified to remove dissolved oxides. Finally, an electrical potential is applied between the anode and cathode in an amount sufficient to form substantially pure silicon on the cathode in the form of substantially dense, coherent deposits.Type: GrantFiled: June 10, 1982Date of Patent: May 15, 1984Assignee: The United States of America as represented by the United States Department of EnergyInventors: Jerry M. Olson, Karen L. Carleton