Abstract: A sealed modular trim supplemental side air bag inflatable curtain (SABIC) module assembly includes a SABIC and a vehicle trim assembly encapsulating the SABIC. The SABIC is sealed within the vehicle trim assembly and provided as a complete compact module configured for subsequent attachment to a vehicle roll bar.

Abstract: A stator assembly for a turbine engine is disclosed. The stator assembly has a stator support ring, a plurality of stator vanes protruding radially inwardly from the stator support ring, and at least one bleed port disposed on the stator support ring between at least two adjacent stator vanes of the plurality of stator vanes. The at least one bleed port defines an oblong profile having a first end terminating near a leading edge of a first stator vane of the at least two adjacent stator vanes, and a second end, substantially opposed from the first end, terminating near a trailing edge of a second stator vane of the at least two adjacent stator vanes. The profile may be concave toward a suction sidewall of the second stator vane of the at least two adjacent stator vanes.

Abstract: A stator assembly for a turbine engine is disclosed. The stator assembly has a stator support ring, a plurality of stator vanes protruding radially inwardly from the stator support ring, and at least one bleed port disposed on the stator support ring between at least two adjacent stator vanes of the plurality of stator vanes. The at least one bleed port defines an oblong profile having a first end terminating near a leading edge of a first stator vane of the at least two adjacent stator vanes, and a second end, substantially opposed from the first end, terminating near a trailing edge of a second stator vane of the at least two adjacent stator vanes. The profile may be concave toward a suction sidewall of the second stator vane of the at least two adjacent stator vanes.

Abstract: A non-volatile MOS memory cell which includes a bistable (flip-flop) circuit with slightly imbalanced loads. An electrically programmable, floating gate device is coupled across a portion of one of the loads to permit selective shunting. When the cell is powered-down (such as at power failure), the floating gate is either charged or discharged as a function of the state of the flip-flop. When power is reapplied, the imbalance caused by the selective shunting forces the flip-flop to its previous state. The relatively small cell does not require resetting, and the stored information is returned in its true (non-complementary) form when the cell is reactivated.

Abstract: An electrically programmable and electrically erasable MOS memory device suitable for high density integrated circuit memories is disclosed. Carriers are tunneled between a floating conductive gate and a doped region in the substrate to program and erase the device. A minimum area of thin oxide (70 A-200 A) is used to separate this doped region from the floating gate. In one embodiment, a second layer of polysilicon is used to protect the thin oxide region during certain processing steps.