Patents by Inventor Jerry Peijun Chen

Jerry Peijun Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • METHODS FOR FORMING A TRANSITION METAL NIOBIUM NITRIDE FILM ON A SUBSTRATE BY ATOMIC LAYER DEPOSITION AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
    Publication number: 20240030035
    Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.
    Type: Application
    Filed: October 4, 2023
    Publication date: January 25, 2024
    Inventors: Jerry Peijun Chen, Fred Alokozai
  • Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
    Patent number: 11810788
    Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.
    Type: Grant
    Filed: June 4, 2020
    Date of Patent: November 7, 2023
    Assignee: ASM IP Holding B.V.
    Inventors: Jerry Peijun Chen, Fred Alokozai
  • METHODS FOR FORMING A TRANSITION METAL NIOBIUM NITRIDE FILM ON A SUBSTRATE BY ATOMIC LAYER DEPOSITION AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
    Publication number: 20200303196
    Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.
    Type: Application
    Filed: June 4, 2020
    Publication date: September 24, 2020
    Inventors: Jerry Peijun Chen, Fred Alokozai
  • Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures
    Patent number: 10714350
    Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.
    Type: Grant
    Filed: October 26, 2017
    Date of Patent: July 14, 2020
    Assignee: ASM IP Holdings, B.V.
    Inventors: Jerry Peijun Chen, Fred Alokozai
  • METHODS FOR FORMING A TRANSITION METAL NIOBIUM NITRIDE FILM ON A SUBSTRATE BY ATOMIC LAYER DEPOSITION AND RELATED SEMICONDUCTOR DEVICE STRUCTURES
    Publication number: 20180158688
    Abstract: Methods for forming a transition metal niobium nitride film on a substrate by atomic layer deposition and related semiconductor device structures are provided. In some embodiments methods may include contacting a substrate with a first reactant comprising a transition metal precursor, contacting the substrate with a second reactant comprising a niobium precursor and contacting the substrate with a third reactant comprising a nitrogen precursor. In some embodiments related semiconductor device structures may include a semiconductor body and an electrode comprising a transition metal niobium nitride disposed over the semiconductor body.
    Type: Application
    Filed: October 26, 2017
    Publication date: June 7, 2018
    Inventors: Jerry Peijun Chen, Fred Alokozai