Abstract: A calibration standard, for calibrating lateral or angular dimensional measurement systems, is provided. The standard may include a first substrate spaced from a second substrate. The standard may be cross-sectioned in a direction substantially perpendicular or substantially non-perpendicular to an upper surface of the first substrate. The cross-sectioned portion of the standard may form a viewing surface of the calibration standard. The standard may include at least one layer disposed between the first and second substrates. The layer, or a feature etched into the first or second substrate or a feature etched into the layer may have a traceably measured thickness or may be oriented at a traceably measured angle with respect to the viewing surface. A thickness or angle of the layer or other feature may be traceably measured using any technique for calibrating a measurement system with a standard reference material traceable to a national testing authority.

Abstract: A calibration standard, for calibrating lateral or angular dimensional measurement systems, is provided. The standard may include a first substrate spaced from a second substrate. The standard may be cross-sectioned in a direction substantially perpendicular or substantially non-perpendicular to an upper surface of the first substrate. The cross-sectioned portion of the standard may form a viewing surface of the calibration standard. The standard may include at least one layer disposed between the first and second substrates. The layer, or a feature etched into the first or second substrate or a feature etched into the layer may have a traceably measured thickness or may be oriented at a traceably measured angle with respect to the viewing surface. A thickness or angle of the layer or other feature may be traceably measured using any technique for calibrating a measurement system with a standard reference material traceable to a national testing authority.

Abstract: An atomic-level step-height standard with step heights less than about 100 .ANG. is in the form of a silicon wafer die with a generally smooth reflective surface but with a periodic pattern of alternating parallel flat linear mesas and valleys having a rectangular cross-section. The periodicity of this pattern of surface features is less than 100 .mu.m and preferably about 20 .mu.m. Certification of the standard involves measuring the pitch and the line or space width of the mesas or valleys using a calibrated probe microscope in order to determine the pattern's duty cycle (C), and also measuring a bidirectional reflectance distribution function for light scattered from the periodic pattern using an angle-resolved scatterometer. From this measurement, a one-dimensional power spectral density function is calculated, then an RMS roughness (R.sub.q) value is derived. The characteristic step height (H) of the standard can then be certified as being H=R.sub.q [C(1-C)].sup.