Abstract: A system comprising a first gate driver comprising: a first die including a first controller for controlling a gate of a first power switch; a second die arranged with the first die and galvanically isolated from the first die, the second die comprising communication circuitry; wherein the first die includes a first connection element and the second die includes a second connection element, wherein the first and second connection elements are configured to provide a communication channel between the galvanically isolated first die and second die; and wherein the second die comprises at least one communication terminal for coupling to a second gate driver comprising a second controller, the second controller for controlling a gate of a second power switch; wherein the communication channel provides for communication between the first controller and the second controller.

Abstract: A power module may include multiple transistors each respectively having a first current-carrying terminal coupled to a voltage supply, a second current-carrying terminal coupled to an output node, and a control terminal, multiple output driver stages each coupled to the control terminal of a respectively different transistor of the transistors, and a driver module. The driver module may include multiple pre-drivers each coupled to a respectively different output driver stage of the output driver stages and a control module having an input and having multiple outputs coupled to the pre-drivers. The control module may be configured to receive a control signal at the input and to selectively control the pre-drivers to drive at least a subset of the plurality of transistors via the output driver stages based on the control signal.

Abstract: A method for in situ threshold voltage determination of a semiconductor device includes sourcing a current to a first terminal of the semiconductor device. A gate terminal of the semiconductor device is driven with a plurality of gate levels. Each gate level includes one of a plurality of different gate voltages. A transistor voltage is measured between the first terminal and a second terminal of the semiconductor device during each gate level. The respective gate voltage is stored in response to the semiconductor device voltage transitioning past a voltage limit. A temperature dependent threshold voltage of the semiconductor device is estimated for a first measured temperature measured during the storing of the stored gate voltage from a previously stored gate voltage and a second measure temperature.

Abstract: A controller for a power converter device, wherein the controller is configured to provide for switching of a switching component of the power converter device based on a feature in a control signal, sample at least one parameter of the power converter device upon expiry of a predetermined time period after switching of the switching component; and output the sample of the at least one parameter.

Abstract: A method for in situ threshold voltage determination of a semiconductor device includes sourcing a current to a first terminal of the semiconductor device. A gate terminal of the semiconductor device is driven with a plurality of gate levels. Each gate level includes one of a plurality of different gate voltages. A transistor voltage is measured between the first terminal and a second terminal of the semiconductor device during each gate level. The respective gate voltage is stored in response to the semiconductor device voltage transitioning past a voltage limit. A temperature dependent threshold voltage of the semiconductor device is estimated for a first measured temperature measured during the storing of the stored gate voltage from a previously stored gate voltage and a second measure temperature.

Abstract: A method of discharging a link capacitor coupled between link nodes of a multiple phase inverter in which each phase comprises a pair of switches coupled in series between the link nodes, including turning off a first switch of a first phase, turning on a second switch of the first phase, and while the second switch of the first phase remains turned on, activating the first switch of the first phase with pulses and monitoring a link voltage across the link nodes until the link capacitor is discharged. Pulse width and duty cycle may be adjusted, or may remain fixed while pulse magnitude is adjusted until a desired discharge rate is reached. The temperature of pulsed phase switches may be monitored in which discharge operation is suspended while temperature is above a threshold. The switches of multiple phases may be pulsed to distribute discharge among multiple phases.

Abstract: A semiconductor device package having galvanic isolation is provided. The semiconductor device includes a package leadframe having a first die pad and a second die pad separated from the first die pad. A first semiconductor die is attached to the first die pad of the package leadframe. A second semiconductor die is attached to the second die pad of the package leadframe. A communication device is attached over the second semiconductor die. The communication device is configured to communicate wirelessly with the second semiconductor die.

Abstract: A method of enabling and disabling diode emulation for a DC/DC converter which generates an output voltage including detecting a diode emulation request signal indicative of enabling or disabling diode emulation and delaying enabling or disabling diode emulation until after the output voltage begins changing. Diode emulation is enabled while the output voltage is decreasing or has reached a predetermined level and an optional delay may be included. Diode emulation is disabled while the voltage is increasing. A diode emulation control circuit includes a first circuit that determines when the output voltage is changing and a second circuit that selectively enables or disables diode emulation in response to a diode emulation enable/disable signal after the output voltage begins to change.