Abstract: An integrated circuit (IC) device includes a substrate and a circuit region over the substrate. The circuit region includes at least one active region extending along a first direction, at least one gate region extending across the at least one active region and along a second direction transverse to the first direction, and at least one first input/output (IO) pattern configured to electrically couple the circuit region to external circuitry outside the circuit region. The at least one first IO pattern extends along a third direction oblique to both the first direction and the second direction.

Abstract: Powered unicycles are disclosed. In some embodiments, the powered unicycle can be self-balancing, and can include a forward foot support located in front of the wheel of the unicycle in the direction of travel of the wheel, and a rearward foot support located behind the wheel of the unicycle. The powered unicycle can include at least one sensor configured to sense a change in position or orientation of the powered unicycle due to a shift in weight of a user standing or sitting on the unicycle, and control the operation of a hub-mounted drive motor to move the powered unicycle based on the sensed change in position or orientation of the powered unicycle.

Abstract: A caster board can include a front platform section connected by a torsion bar or other neck portion to a rear platform section. The caster board can be convertible between a first configuration in which the caster board has three wheels, and a second configuration in which the caster board has two wheels. In the first configuration, the rear platform section can be supported by two wheels laterally offset from a longitudinal axis of the caster board. In the second configuration, the rear platform section can be supported by one wheel aligned with a longitudinal axis of the caster board. The rear platform section can include at least three mounting locations configured to have caster assemblies installed therein.

Abstract: In one embodiment, the process comprises depositing a CVD metal oxide layer on the substrate at a substrate temperature of less than or equal to about 480° C. and annealing the metal oxide layer. In one aspect, annealing comprises providing a first substrate temperature between abut 600° C. and 900° C., maintaining the first substrate temperature for a time period of between about 0.1 seconds and 30 minutes, providing a second substrate temperature between about 500° C. to 600° C., and maintaining the second substrate temperature for a time period of at least 10 minutes. In another embodiment, the process comprises depositing a first electrode; depositing a CVD metal oxide layer on the first electrode at a substrate temperature of less than or equal to about 480° C.; and depositing a second electrode on the oxide layer. In one aspect the metal oxide layer is annealed prior to deposition of the second electrode.