Patents by Inventor Jerry Tsiang

Jerry Tsiang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for monitoring silicide failures
    Patent number: 6461880
    Abstract: A method for monitoring silicide failures in the semiconductor process provides P-channel gate oxide capacitors on a semiconductor wafer. The breakdown voltages of the P-channel oxide gate capacitors are measured. With higher rapid thermal anneal (RTA) temperatures, an increased number of short failures occur in the P-channel gate oxide capacitors. Based on a correlation of the P-channel gate oxide capacitor failures and the RTA temperatures, the optimum RTA temperature for the silicide process is determined.
    Type: Grant
    Filed: June 28, 2001
    Date of Patent: October 8, 2002
    Assignee: Advanced Micro Devices, Inc.
    Inventor: Jerry Tsiang
  • Method and apparatus for automated wafer level testing and reliability data analysis
    Patent number: 5822717
    Abstract: Methods and apparatus are disclosed for testing integrated circuits at the wafer level and for integrating test results, calculation of lifetimes and generation of trend charts in a common database following testing. A wafer tester controller is supplemented with additional hardware and software to avoid data transfer errors and facilitate processing and storage of test results. The data base is available over a network to all areas of an organization.
    Type: Grant
    Filed: July 31, 1995
    Date of Patent: October 13, 1998
    Assignee: Advanced Micro Devices, Inc.
    Inventors: Jerry Tsiang, Mikkel Lantz, Yeng-Kaung Peng, Ying Shiau