Abstract: A method of making an x-ray mask intended to expose photoresist upon a layer which is to be etched to a nominal dimension, whereby effects such as global divergence, local divergence, and dose non-uniformity are compensated by adjusting the feature dimension in the mask. The compensation is achieved by varying the dose provided by an electron beam which is used to define the feature upon the x-ray mask or by adding or subtracting pixels during writing of the pattern with an electron beam. The dose is varied by changing the electron beam current or the rate at which the electron beam scans the field. The features are typically those encountered in the processing of a semiconductor wafer wherein the smallest dimension is 250 nm or less.