Patents by Inventor Jerry Winkler
Jerry Winkler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20250176248Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.Type: ApplicationFiled: January 17, 2025Publication date: May 29, 2025Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Raisanen, Timo Asikainen, Chiyu Zhu, Jaako Anttila
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Patent number: 12237392Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.Type: GrantFiled: September 2, 2021Date of Patent: February 25, 2025Assignee: ASM IP Holding B.V.Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
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Publication number: 20210399111Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.Type: ApplicationFiled: September 2, 2021Publication date: December 23, 2021Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
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Patent number: 11139383Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.Type: GrantFiled: April 15, 2020Date of Patent: October 5, 2021Assignee: ASM IP HOLDING B.V.Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
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Publication number: 20200328285Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.Type: ApplicationFiled: April 15, 2020Publication date: October 15, 2020Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
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Patent number: 10636889Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.Type: GrantFiled: June 4, 2018Date of Patent: April 28, 2020Assignee: ASM IP Holding B.V.Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
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Patent number: 10370761Abstract: A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.Type: GrantFiled: January 6, 2017Date of Patent: August 6, 2019Assignee: ASM AMERICA, INC.Inventors: Todd Dunn, Carl White, Mike Halpin, Eric Shero, Herbert Terhorst, Jerry Winkler
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Patent number: 10266946Abstract: A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.Type: GrantFiled: January 6, 2017Date of Patent: April 23, 2019Assignee: ASM AMERICA, INC.Inventors: Todd Dunn, Carl White, Mike Halpin, Eric Shero, Herbert Terhorst, Jerry Winkler
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Publication number: 20190043962Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.Type: ApplicationFiled: June 4, 2018Publication date: February 7, 2019Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
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Patent number: 10002936Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.Type: GrantFiled: October 21, 2015Date of Patent: June 19, 2018Assignee: ASM IP HOLDING B.V.Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
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Publication number: 20170121818Abstract: A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.Type: ApplicationFiled: January 6, 2017Publication date: May 4, 2017Inventors: Todd Dunn, Carl White, Mike Halpin, Eric Shero, Herbert Terhorst, Jerry Winkler
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Patent number: 9574268Abstract: A vapor deposition device includes a reactor including a reaction chamber and an injector for injecting vapor into the reaction chamber. The device also includes a manifold for delivering vapor to the injector. The manifold includes a manifold body having an internal bore, a first distribution channel disposed within the body in a plane intersecting the longitudinal axis of the bore, and a plurality of supply channels disposed within the body and in flow communication with the first distribution channel and with the bore. Each of the first supply channels is disposed at an acute angle with respect to the longitudinal axis of the bore, and each of the supply channels connects with the bore at a different angular position about the longitudinal axis. The distribution channel (and thus, the supply channels) can be connected with a common reactant source. Related deposition methods are also described.Type: GrantFiled: October 28, 2011Date of Patent: February 21, 2017Assignee: ASM AMERICA, INC.Inventors: Todd Dunn, Carl White, Mike Halpin, Eric Shero, Herbert Terhorst, Jerry Winkler
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Patent number: 9340874Abstract: A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.Type: GrantFiled: February 27, 2015Date of Patent: May 17, 2016Assignee: ASM IP Holding B.V.Inventors: Michael Halpin, Eric Shero, Carl White, Fred Alokozai, Jerry Winkler, Todd Dunn
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Publication number: 20160118261Abstract: A process for depositing titanium aluminum or tantalum aluminum thin films comprising nitrogen on a substrate in a reaction space can include at least one deposition cycle. The deposition cycle can include alternately and sequentially contacting the substrate with a vapor phase Ti or Ta precursor and a vapor phase Al precursor. At least one of the vapor phase Ti or Ta precursor and the vapor phase Al precursor may contact the substrate in the presence of a vapor phase nitrogen precursor.Type: ApplicationFiled: October 21, 2015Publication date: April 28, 2016Inventors: Suvi Haukka, Michael Givens, Eric Shero, Jerry Winkler, Petri Räisänen, Timo Asikainen, Chiyu Zhu, Jaakko Anttila
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Patent number: 9299595Abstract: A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.Type: GrantFiled: December 8, 2014Date of Patent: March 29, 2016Assignee: ASM IP Holding B.V.Inventors: Todd Dunn, Fred Alokozai, Jerry Winkler, Michael Halpin
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Patent number: 9202727Abstract: A substrate supporting assembly in a reaction space includes a heater, a substrate support member, and a shim positioned between the heater and the substrate support member. The shim may be removably secured between the heater and the substrate support member. The shim may further include an inner surface defining a perimeter of a gap. The gap may be further defined by a bottom surface of the substrate support member and a top surface of the heater. The substrate support member may further include a shoulder positioned radially outside of a substrate support position and wherein the shim inner surface is radially aligned with the substrate support member shoulder.Type: GrantFiled: March 2, 2012Date of Patent: December 1, 2015Assignee: ASM IP HoldingInventors: Todd Dunn, Carl White, Michael Halpin, Eric Shero, Jerry Winkler
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Patent number: 9167625Abstract: A reaction chamber including a substrate supporting member positioned within the reaction chamber, the reaction chamber having a first region and a second region, a shield positioned within the second chamber and movable with the substrate supporting member, and wherein the shield is adjacent at least a bottom surface of the substrate supporting member.Type: GrantFiled: November 14, 2012Date of Patent: October 20, 2015Assignee: ASM IP Holding B.V.Inventors: Eric Shero, Michael Halpin, Jerry Winkler
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Publication number: 20150167159Abstract: A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.Type: ApplicationFiled: February 27, 2015Publication date: June 18, 2015Inventors: Michael Halpin, Eric Shero, Carl White, Fred Alokozai, Jerry Winkler, Todd Dunn
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Patent number: 9005539Abstract: A reaction chamber including an upper region for processing a substrate, a lower region for loading a substrate, a susceptor movable within the reaction chamber, a first sealing member positioned on a perimeter of the susceptor, a second sealing member positioned between the upper region and the lower region, wherein the first and second sealing members are selectively engaged with one another to limit communication between the upper region and the lower region.Type: GrantFiled: November 14, 2012Date of Patent: April 14, 2015Assignee: ASM IP Holding B.V.Inventors: Michael Halpin, Eric Shero, Carl White, Fred Alokozai, Jerry Winkler, Todd Dunn
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Publication number: 20150096973Abstract: A wafer processing apparatus may include a susceptor having a top side and a backside, a susceptor heater having a spacing member and a heating member, a shim removably mounted between the susceptor and the susceptor heater, a cavity formed by the susceptor backside, the susceptor heater, and the shim, a fluid inlet communicating with the cavity, and a plurality of fluid outlets communicating with the cavity.Type: ApplicationFiled: December 8, 2014Publication date: April 9, 2015Inventors: Todd Dunn, Fred Alokozai, Jerry Winkler, Michael Halpin