Abstract: A chamber for etching substrates includes a support member therein which is suspended from a sidewall of the chamber. The support member includes multiple planar faces for receiving substrates thereon, and is rotatable about a horizontal axis to position the multiple planar faces in a horizontal position to place the substrates on the planar faces or remove the substrates from the planar faces, and a second position to place the substrates in a non-horizontal position for processing. A clamping and lifting apparatus is provided on the support member that is positionable, with respect to the support member, in an extended position to permit a substrate to be positioned between the clamping and lifting apparatus and the support member, and in a retracted position to clamp the substrate to the support member.The chamber is especially adapted to etching substrates requiring high power densities, such as substrates having aluminum films, without causing arcing.