Patents by Inventor Jerry Yuen-Kui Wong
Jerry Yuen-Kui Wong has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 6545420Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.Type: GrantFiled: June 6, 1995Date of Patent: April 8, 2003Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Craig A. Roderick, John R. Trow, Chan-Lon Yang, Jerry Yuen-Kui Wong, Jeffrey Marks, Peter R. Keswick, David W. Groechel, Jay D. Pinson, II, Tetsuya Ishikawa, Lawrence Chang-Lai Lei, Masato M. Toshima
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Patent number: 6518195Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the 10 wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.Type: GrantFiled: February 15, 2000Date of Patent: February 11, 2003Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Chan-Lon Yang, Jerry Yuen-Kui Wong, Jeffrey Marks, Peter R. Keswick, David W. Groechel, Craig A. Roderick, John R. Trow, Tetsuya Ishikawa, Jay D. Pinson, II, Lawrence Chang-Lai Lei, Masato M. Toshima, Gerald Zheyao Yin
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Patent number: 6488807Abstract: The invention is embodied in an RF plasma reactor for processing a semiconductor workpiece, including wall structures for containing a plasma therein, a workpiece support, a coil antenna capable of receiving a source RF power signal and being juxtaposed near the chamber, the workpiece support including a bias electrode capable of receiving a bias RF power signal, and first and second magnet structures adjacent the wall structure and in spaced relationship, with one pole of the first magnet structure facing an opposite pole of the second magnet structure, the magnet structures providing a plasma-confining static magnetic field adjacent said wall structure.Type: GrantFiled: May 3, 2000Date of Patent: December 3, 2002Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Chan-Lon Yang, Jerry Yuen-Kui Wong, Jeffrey Marks, Peter R. Keswick, David W. Groechel, Craig A. Roderick, John R. Trow, Tetsuya Ishikawa, Jay D. Pinson, II, Lawrence Chang-Lai Lei, Masato M. Toshima, Gerald Zheyao Yin
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Patent number: 6444137Abstract: A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.Type: GrantFiled: July 1, 1996Date of Patent: September 3, 2002Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Chan-Lon Yang, Jerry Yuen-Kui Wong, Jeffrey Marks, Peter R. Keswick, David W. Groechel
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Patent number: 6399514Abstract: A plasma process for etching oxide and having a high selectivity to silicon including flowing into a plasma reaction chamber a fluorine-containing etching gas and maintaining a temperature of an exposed silicon surface within said chamber at a temperature of between 200° C. and 300° C. An example of the etching gas includes SiF4 and a fluorocarbon gas. The plasma may be generated by a capacitive discharge type plasma generator or by an electromagnetically coupled plasma generator, such as an inductively coupled plasma generator. The high selectivity exhibited by the etch process permits use of an electromagnetically coupled plasma generator, which in turn permits the etch process to be performed at low pressures of between 1 and 30 milliTorr, resulting the etching of vertical sidewalls in the oxide layer.Type: GrantFiled: August 24, 2000Date of Patent: June 4, 2002Assignee: Applied Materials, Inc.Inventors: Jeffrey Marks, Jerry Yuen-Kui Wong, David W. Groechel, Peter R. Keswick, Chan-Lon Yang
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Publication number: 20020004309Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.Type: ApplicationFiled: June 9, 1999Publication date: January 10, 2002Inventors: KENNETH S. COLLINS, CRAIG A. RODERICK, JOHN R. TROW, CHAN-LON YANG, JERRY YUEN-KUI WONG, JEFFREY MARKS, PETER R. KESWICK, DAVID W. GROECHEL, JAY D. PINSON, TETSUYA ISHIKAWA, LAWRENCE CHANG-LAI LEI, MASATO M. TOSHIMA
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Patent number: 6251792Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.Type: GrantFiled: October 10, 1997Date of Patent: June 26, 2001Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Craig A. Roderick, John R. Trow, Chan-Lon Yang, Jerry Yuen-Kui Wong, Jeffrey Marks, Peter R. Keswick, David W. Groechel, Jay D. Pinson, II, Tetsuya Ishikawa, Lawrence Chang-Lai Lei, Masato M. Toshima, Gerald Zheyao Yin
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Patent number: 6171974Abstract: A plasma etch process for oxide having high selectivity to silicon is disclosed comprising the use of a mixture of SiF4 and one or more other fluorine-containing etch gases in an etch chamber maintained within a pressure range of from about 1 milliTorr to about 200 milliTorr. Preferably, the etch chamber also contains an exposed silicon surface. The plasma may be generated by a capacitive discharge type plasma generator, if pressures of at least about 50 milliTorr are used, but preferably the plasma is generated by an electromagnetically coupled plasma generator. The high selectivity exhibited by the etch process of the invention permits use of an electromagnetically coupled plasma generator which, in turn, permits operation of the etch process at reduced pressures of preferably from about 1 milliTorr to about 30 milliTorr resulting in the etching of vertical sidewall openings in the oxide layer.Type: GrantFiled: January 24, 1992Date of Patent: January 9, 2001Assignee: Applied Materials, Inc.Inventors: Jeffrey Marks, Jerry Yuen-Kui Wong, David W. Groechel, Peter R. Keswick, Chan-Lon Yang
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Patent number: 6068784Abstract: A domed plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching metals, dielectrics and semiconductor materials. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with etch processes, deposition processes and combined etch/deposition processed. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields.Type: GrantFiled: April 1, 1993Date of Patent: May 30, 2000Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Craig A. Roderick, John R. Trow, Chan-Lon Yang, Jerry Yuen-Kui Wong, Jeffrey Marks, Peter R. Keswick, David W. Groechel, Jay D. Pinson, II, Tetsuya Ishikawa, Lawrence Chang-Lai Lei, Masato M. Toshima
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Patent number: 6020270Abstract: A process for etching single crystal silicon, polysilicon, silicide and polycide using iodinate or brominate gas chemistry, is disclosed. The iodinate/brominate gas chemistry etches narrow deep trenches with very high aspect ratios and good profile control and without black silicon formation or other undesirable phenomena.Type: GrantFiled: August 14, 1998Date of Patent: February 1, 2000Assignee: Applied Materials, Inc.Inventors: Jerry Yuen Kui Wong, David Nin-Kou Wang, Mei Chang, Alfred W. Mak, Dan Maydan
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Patent number: 5888414Abstract: A plasma reactor chamber uses an antenna driven by RF energy (LF, MF, or VHF) which is inductively coupled inside the reactor dome. The antenna generates a high density, low energy plasma inside the chamber for etching oxygen-containing layers overlying non-oxygen-containing layers with high selectivity. Auxiliary RF bias energy applied to the wafer support cathode controls the cathode sheath voltage and controls the ion energy independent of density. Various magnetic and voltage processing enhancement techniques are disclosed, along with other etch processes, deposition processes and combined etch/deposition processes. The disclosed invention provides processing of sensitive devices without damage and without microloading, thus providing increased yields. Etching of an oxygen-containing layer overlying a non-oxygen-containing layer can be achieved with high selectivity.Type: GrantFiled: September 24, 1997Date of Patent: March 30, 1999Assignee: Applied Materials, Inc.Inventors: Kenneth S. Collins, Chan-Lon Yang, Jerry Yuen-Kui Wong, Jeffrey Marks, Peter R. Keswick, David W. Groechel
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Patent number: 5874362Abstract: A process for etching single crystal silicon, polysilicon, silicide and polycide using iodinate or brominate gas chemistry, is disclosed. The iodinate/brominate gas chemistry etches narrow deep trenches with very high aspect ratios and good profile control and without black silicon formation or other undesirable phenomena.Type: GrantFiled: April 29, 1996Date of Patent: February 23, 1999Assignee: Applied Materials, Inc.Inventors: Jerry Yuen-Kui Wong, David Nin-Kou Wang, Mei Chang, Alfred W. S. Mak, Dan Maydan