Abstract: Multi-layered structures containing GaN on SOD (silicon/diamond/silicon) substrates are described. The unique substrate/epilayer combination can provide electronic materials suitable for high-power and opto-electronic devices without commonly observed limitations due to excess heat during device operation. The resulting devices have built-in thermal heat spreading capability that result in better performance and higher reliability.

Abstract: Conductive diamond film regions on a substrate for establishing electrical contact with a surface mount semiconductor package, or the like, is formed by heating the substrate base in a diamond film gas phase deposition reactor, then introducing molecular hydrogen, a carbon bearing gas, and a dopant source into the reactor at a temperature sufficient to produce a conductive polycrystalline diamond layer. Then the polycrystalline diamond layer is etched down to the substrate base in regions where no contact will exist with the surface mount packages to define a desired pattern of conductive polycrystalline diamond in regions of the packages where electrical contact is desired. The substrate is then brought into pressure contact with a surface mount semiconductor package, or the like.