Patents by Inventor Jerzy Garczy?ski

Jerzy Garczy?ski has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Bulk monocrystalline gallium nitride
    Patent number: 7744697
    Abstract: The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
    Type: Grant
    Filed: October 14, 2003
    Date of Patent: June 29, 2010
    Assignees: Nichia Corporation, Ammono SP. Z O.O.
    Inventors: Robert Tomasz Dwiliński, Roman Marek Doradziński, Jerzy Garczyński, Leszek Piotr Sierzputowski, Yasuo Kanbara
  • Nitride semiconductor laser device and a method for improving its performance
    Patent number: 7315559
    Abstract: The present invention relates to a nitride semiconductor laser device provided with a window layer on a light-emitting end face of the resonator which comprises an active layer of nitride semiconductor between the n-type nitride semiconductor layers and the p-type nitride semiconductor layers, in which at least the radiation-emitting end face of said resonator is covered by said window layer comprising monocrystalline nitride of general formula AlxGa1?x?yINyN, where 0?x+y?1, 0?x?1 and 0?y<1, having a wider energy gap than that of the active layer and being formed at a low temperature so as not to damage said active layer. Formation of such a window layer improves significantly the performance of the nitride laser device according to the invention.
    Type: Grant
    Filed: June 26, 2003
    Date of Patent: January 1, 2008
    Assignee: Ammono Sp. z o.o.
    Inventors: Robert Dwilinski, Roman Doradziński, Jerzy Garczyński, Leszek P. Sierzputowski, Yasuo Kanbara
  • Process and apparatus for obtaining bulk monocrystalline gallium-containing nitride
    Patent number: 7160388
    Abstract: The present invention refers to an ammonobasic method for preparing a gallium-containing nitride crystal, in which gallium-containing feedstock is crystallized on at least one crystallization seed in the presence of an alkali metal-containing component in a supercritical nitrogen-containing solvent. The method can provide monocrystalline gallium-containing nitride crystals having a very high quality.
    Type: Grant
    Filed: May 17, 2002
    Date of Patent: January 9, 2007
    Assignees: Nichia Corporation, Ammono Sp. z o.o.
    Inventors: Robert Tomasz Dwiliński, Roman Marek Doradziński, Jerzy Garczyński, Leszek Piotr Sierzputowski, Yasuo Kanbara
  • Bulk nitride mono-crystal including substrate for epitaxy
    Patent number: 7132730
    Abstract: The invention relates to a substrate for epitaxy, especially for preparation of nitride semiconductor layers. Invention covers a bulk nitride mono-crystal characterized in that it is a mono-crystal of gallium nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium nitride has a surface area greater than 100 mm2, it is more than 1.0 ?m thick and its C-plane surface dislocation density is less than 106/cm2, while its volume is sufficient to produce at least one further-processable non-polar A-plane or M-plane plate having a surface area at least 100 mm2. More generally, the present invention covers a bulk nitride mono-crystal which is characterized in that it is a mono-crystal of gallium-containing nitride and its cross-section in a plane perpendicular to c-axis of hexagonal lattice of gallium-containing nitride has a surface area greater than 100 mm2, it is more 1.0 ?m thick and its surface dislocation density is less than 106/cm2.
    Type: Grant
    Filed: October 25, 2002
    Date of Patent: November 7, 2006
    Assignees: Ammono Sp. z.o.o., Nichia Corporation
    Inventors: Robert Dwiliński, Roman Doradziński, Jerzy Garczyński, Leszek P. Sierzputowski, Yasuo Kanbara