Patents by Inventor Jes Asmussen
Jes Asmussen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11854775Abstract: The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated optical measurement system that enable microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond while measuring the local surface properties of the component while being grown. Related methods include deposition of the component, measurement of the local surface properties, and/or alteration of operating conditions during deposition in response to the local surface properties. As described in more detail below, the MPCR apparatus includes one or more electrically conductive, optically transparent regions forming part of the external boundary of its microwave chamber, thus permitting external optical interrogation of internal reactor conditions during deposition while providing a desired electrical microwave chamber to maintain selected microwave excitation modes therein.Type: GrantFiled: January 16, 2020Date of Patent: December 26, 2023Assignee: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITYInventors: Timothy A. Grotjohn, Jes Asmussen
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Patent number: 11702749Abstract: The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated tuning and process control methods that enable the microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond. Related methods enable the control of the microwave discharge position, size and shape, and enable efficient matching of the incident microwave power into the reactor prior to and during component deposition. Pre-deposition tuning processes provide a well matched reactor exhibiting a high plasma reactor coupling efficiency over a wide range of operating conditions, thus allowing operational input parameters to be modified during deposition while simultaneously maintaining the reactor in a well-matched state.Type: GrantFiled: December 2, 2019Date of Patent: July 18, 2023Assignee: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITYInventors: Jes Asmussen, Jing Lu, Yajun Gu, Shreya Nad
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Patent number: 11579597Abstract: Embodiments of this present disclosure may include a system that includes a first network device. The first network device may perform an operation according to a device configuration file. The system may also include a second network device that directly communicatively couples to the first network device through a peer-to-peer (P-P) communication network. The second network device may include a backup file of the device configuration file. The second network device may transmit the backup file of the device configuration file to the first network device in response to detecting that the first network device is lacking the device configuration file.Type: GrantFiled: June 4, 2021Date of Patent: February 14, 2023Assignee: Rockwell Automation Technologies, Inc.Inventors: Dayin Xu, John P. Caspers, William H. Martin, Jeffrey S. Martin, Jes Asmussen
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Publication number: 20210294305Abstract: Embodiments of this present disclosure may include a system that includes a first network device. The first network device may perform an operation according to a device configuration file. The system may also include a second network device that directly communicatively couples to the first network device through a peer-to-peer (P-P) communication network. The second network device may include a backup file of the device configuration file. The second network device may transmit the backup file of the device configuration file to the first network device in response to detecting that the first network device is lacking the device configuration file.Type: ApplicationFiled: June 4, 2021Publication date: September 23, 2021Inventors: Dayin Xu, John P. Caspers, William H. Martin, Jeffrey S. Martin, Jes Asmussen
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Patent number: 11036209Abstract: Embodiments of this present disclosure may include a system that includes a first network device. The first network device may perform an operation according to a device configuration file. The system may also include a second network device that directly communicatively couples to the first network device through a peer-to-peer (P-P) communication network. The second network device may include a backup file of the device configuration file. The second network device may transmit the backup file of the device configuration file to the first network device in response to detecting that the first network device is lacking the device configuration file.Type: GrantFiled: September 24, 2019Date of Patent: June 15, 2021Assignee: Rockwell Automation Technologies, Inc.Inventors: Dayin Xu, John P. Caspers, William H. Martin, Jeffrey S. Martin, Jes Asmussen
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Publication number: 20210089008Abstract: Embodiments of this present disclosure may include a system that includes a first network device. The first network device may perform an operation according to a device configuration file. The system may also include a second network device that directly communicatively couples to the first network device through a peer-to-peer (P-P) communication network. The second network device may include a backup file of the device configuration file. The second network device may transmit the backup file of the device configuration file to the first network device in response to detecting that the first network device is lacking the device configuration file.Type: ApplicationFiled: September 24, 2019Publication date: March 25, 2021Inventors: Dayin Xu, John P. Caspers, William H. Martin, Jeffrey S. Martin, Jes Asmussen
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Publication number: 20200216960Abstract: The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated tuning and process control methods that enable the microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond. Related methods enable the control of the microwave discharge position, size and shape, and enable efficient matching of the incident microwave power into the reactor prior to and during component deposition. Pre-deposition tuning processes provide a well matched reactor exhibiting a high plasma reactor coupling efficiency over a wide range of operating conditions, thus allowing operational input parameters to be modified during deposition while simultaneously maintaining the reactor in a well-matched state.Type: ApplicationFiled: December 2, 2019Publication date: July 9, 2020Inventors: Jes Asmussen, Jing Lu, Yajun Gu, Shreya Nad
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Publication number: 20200152433Abstract: The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated optical measurement system that enable microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond while measuring the local surface properties of the component while being grown. Related methods include deposition of the component, measurement of the local surface properties, and/or alteration of operating conditions during deposition in response to the local surface properties. As described in more detail below, the MPCR apparatus includes one or more electrically conductive, optically transparent regions forming part of the external boundary of its microwave chamber, thus permitting external optical interrogation of internal reactor conditions during deposition while providing a desired electrical microwave chamber to maintain selected microwave excitation modes therein.Type: ApplicationFiled: January 16, 2020Publication date: May 14, 2020Inventors: Timothy A. Grotjohn, Jes Asmussen
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Patent number: 10541118Abstract: The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated optical measurement system that enable microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond while measuring the local surface properties of the component while being grown. Related methods include deposition of the component, measurement of the local surface properties, and/or alteration of operating conditions during deposition in response to the local surface properties. As described in more detail below, the MCPR apparatus includes one or more electrically conductive, optically transparent regions forming part of the external boundary of its microwave chamber, thus permitting external optical interrogation of internal reactor conditions during deposition while providing a desired electrical microwave chamber to maintain selected microwave excitation modes therein.Type: GrantFiled: March 20, 2017Date of Patent: January 21, 2020Assignee: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITYInventors: Timothy A. Grotjohn, Jes Asmussen
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Patent number: 10494719Abstract: The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated tuning and process control methods that enable the microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond. Related methods enable the control of the microwave discharge position, size and shape, and enable efficient matching of the incident microwave power into the reactor prior to and during component deposition. Pre-deposition tuning processes provide a well matched reactor exhibiting a high plasma reactor coupling efficiency over a wide range of operating conditions, thus allowing operational input parameters to be modified during deposition while simultaneously maintaining the reactor in a well-matched state.Type: GrantFiled: May 22, 2015Date of Patent: December 3, 2019Assignee: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITYInventors: Jes Asmussen, Jing Lu, Yajun Gu, Shreya Nad
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Patent number: 9890457Abstract: Microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed reactors operate at high pressures (>180-320 Torr) and high power densities (>150 W/cm3), and thereby enable high deposition rate CVD processes that rapidly deposit materials. In particular, reactor design examples are described that, when operating in the 180-320 Torr pressure regime, rapidly CVD synthesize high quality polycrystalline (PCD) and single crystal diamond (SCD). The improved reactors include a radial contraction in the vicinity of the plasma chamber (and optionally a combined expansion in the vicinity of the electromagnetic wave source, followed by the contraction) in the main microwave chamber as electromagnetic energy propagates from an electromagnetic wave source to a plasma/deposition chamber.Type: GrantFiled: May 11, 2012Date of Patent: February 13, 2018Assignee: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITYInventors: Jes Asmussen, Yajun Gu, Timothy A. Grotjohn
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Publication number: 20170271132Abstract: The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated optical measurement system that enable microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond while measuring the local surface properties of the component while being grown. Related methods include deposition of the component, measurement of the local surface properties, and/or alteration of operating conditions during deposition in response to the local surface properties. As described in more detail below, the MPCR apparatus includes one or more electrically conductive, optically transparent regions forming part of the external boundary of its microwave chamber, thus permitting external optical interrogation of internal reactor conditions during deposition while providing a desired electrical microwave chamber to maintain selected microwave excitation modes therein.Type: ApplicationFiled: March 20, 2017Publication date: September 21, 2017Inventors: Timothy A. Grotjohn, Jes Asmussen
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Patent number: 9732440Abstract: The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.Type: GrantFiled: November 1, 2016Date of Patent: August 15, 2017Assignees: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY, Fraunhofer USAInventors: Jes Asmussen, Timothy A. Grotjohn, Donnie K. Reinhard, Rahul Ramamurti, M. Kagan Yaran, Thomas Schuelke, Michael Becker, David King
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Publication number: 20170183778Abstract: The disclosure relates to microwave cavity plasma reactor (MCPR) apparatus and associated tuning and process control methods that enable the microwave plasma assisted chemical vapor deposition (MPACVD) of a component such as diamond. Related methods enable the control of the microwave discharge position, size and shape, and enable efficient matching of the incident microwave power into the reactor prior to and during component deposition. Pre-deposition tuning processes provide a well matched reactor exhibiting a high plasma reactor coupling efficiency over a wide range of operating conditions, thus allowing operational input parameters to be modified during deposition while simultaneously maintaining the reactor in a well-matched state.Type: ApplicationFiled: May 22, 2015Publication date: June 29, 2017Inventors: Jes Asmussen, Jing Lu, Yajun Gu, Shreya Nad
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Publication number: 20170114476Abstract: The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.Type: ApplicationFiled: November 1, 2016Publication date: April 27, 2017Inventors: Jes Asmussen, Timothy A. Grotjohn, Donnie K. Reinhard, Rahul Ramamurti, M. Kagan Yaran, Thomas Schuelke, Michael Becker, David King
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Patent number: 9487858Abstract: The present invention relates to a microwave plasma deposition process and apparatus for producing diamond, preferably as single crystal diamond (SCD). The process and apparatus enables the production of multiple layers of the diamond by the use of an extending device to increase the length and the volume of a recess in a holder containing a SCD substrate as layers of diamond are deposited. The diamond is used for abrasives, cutting tools, gems, electronic substrates, heat sinks, electrochemical electrodes, windows for high power radiation and electron beams, and detectors.Type: GrantFiled: March 10, 2009Date of Patent: November 8, 2016Assignees: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY, Fraunhofer USAInventors: Jes Asmussen, Timothy Grotjohn, Donnie Reinhard, Rahul Ramamurti, M. Kagan Yaran, Thomas Schuelke, Michael Becker, David King
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Patent number: 9166002Abstract: The disclosure relates to the formation of n-doped single crystal diamond (SCD). In general, a SCD substrate is preferentially anisotropically etched to provide one or more recesses in the SCD substrate, where the recesses are defined by (1 1 1) surface sidewalls resulting from the preferential anisotropic etching process. The recesses generally have a pyramidal shape. N-type doped SCD (e.g., using a phosphorous dopant) is then deposited into the preferentially anisotropically etched recesses. When the SCD substrate is a p-type diamond (e.g., using a boron dopant), the resulting structure can be used as a p-n junction, for example for use in various power electronic apparatus such as diodes, etc.Type: GrantFiled: August 31, 2011Date of Patent: October 20, 2015Assignee: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITYInventors: Timothy A. Grotjohn, Jes Asmussen, Timothy Hogan
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Patent number: 9139909Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.Type: GrantFiled: October 22, 2012Date of Patent: September 22, 2015Assignees: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITY, Fraunhofer USAInventors: Jes Asmussen, Timothy Grotjohn, Donnie K. Reinhard, Thomas Schuelke, M. Kagan Yaran, Kadek W. Hemawan, Michael Becker, David King, Yajun Gu, Jing Lu
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Publication number: 20140220261Abstract: Microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed reactors operate at high pressures (>180-320 Torr) and high power densities (>150 W/cm3), and thereby enable high deposition rate CVD processes that rapidly deposit materials. In particular, reactor design examples are described that, when operating in the 180-320 Torr pressure regime, rapidly CVD synthesize high quality polycrystalline (PCD) and single crystal diamond (SCD). The improved reactors include a radial contraction in the vicinity of the plasma chamber (and optionally a combined expansion in the vicinity of the electromagnetic wave source, followed by the contraction) in the main microwave chamber as electromagnetic energy propagates from an electromagnetic wave source to a plasma/deposition chamber.Type: ApplicationFiled: May 11, 2012Publication date: August 7, 2014Applicant: BOARD OF TRUSTEES OF MICHIGAN STATE UNIVERSITYInventors: Jes Asmussen, Yajun Gu, Timothy A. Grotjohn
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Patent number: 8668962Abstract: New and improved microwave plasma assisted reactors, for example chemical vapor deposition (MPCVD) reactors, are disclosed. The disclosed microwave plasma assisted reactors operate at pressures ranging from about 10 Torr to about 760 Torr. The disclosed microwave plasma assisted reactors include a movable lower sliding short and/or a reduced diameter conductive stage in a coaxial cavity of a plasma chamber. For a particular application, the lower sliding short position and/or the conductive stage diameter can be variably selected such that, relative to conventional reactors, the reactors can be tuned to operate over larger substrate areas, operate at higher pressures, and discharge absorbed power densities with increased diamond synthesis rates (carats per hour) and increased deposition uniformity.Type: GrantFiled: October 22, 2012Date of Patent: March 11, 2014Assignees: Board of Trustees of Michigan State University, Fraunhofer USAInventors: Jes Asmussen, Timothy Grotjohn, Donnie K. Reinhard, Thomas Schuelke, M. Kagan Yaran, Kadek W. Hemawan, Michael Becker, David King, Yajun Gu, Jing Lu