Abstract: The invention is directed to a method and an arrangement for stabilizing the average emitted radiation output of a pulsed radiation source. It is the object of the invention to find a novel possibility for stabilizing the average emitted radiation output of a pulsed radiation source which enables a reliable regulation even when there is no sufficiently reliable manipulated variable for influencing the emitted pulse energy (Ei). According to the invention, this object is met in that the individual pulse energy (Ei) of the current radiation pulse is measured, the deviation of the current individual pulse energy (Ei) from a previously determined target value (E0) is determined, and the pulse interval (?ti+1) preceding the triggering of the next radiation pulse is controlled depending on the magnitude of the deviation between the current individual pulse energy (Ei) and the target value (E0) of the pulse energy.

Abstract: The invention is directed to an arrangement for the suppression of unwanted spectral components (‘out-of-band’ radiation, as it is called) in a plasma-based radiation source. The object of the invention is to find a novel possibility for the suppression of unwanted spectral components in radiation exiting from a plasma-based EUV radiation source which permits a simple suppression of out-of-band radiation outside the desired EUV range without requiring costly manufacturing and adjustment of diffraction gratings. This object is met according to the invention in that a filter unit is provided between the plasma and an application location of the EUV radiation, which filter unit has at least one gas curtain comprising at least one rapidly flowing gas whose molecules have no absorption maxima for the desired EUV radiation and intensive absorption maxima for other, unwanted wavelengths that are emitted, at least in the IR region.

Abstract: The invention is directed to a device for generating flows of gas for filtering the radiation emitted in plasma-based radiation sources. It is the object of the invention to find a novel possibility for generating a gas curtain in the immediate vicinity of a radiating plasma so as to permit a simple arrangement and design and a long life of the device for generating the gas curtain under extreme thermal stress. According to the invention, this object is met in that a slit nozzle is formed of a plurality of partial bodies comprising different materials to form a supersonic nozzle profile for the generation of a broad gas curtain in order to accommodate the slit nozzle to different thermal and precision-mechanical requirements in the gas inlet region and in the gas outlet region.

Abstract: The invention is directed to a device for generating flows of gas for filtering the radiation emitted in plasma-based radiation sources. It is the object of the invention to find a novel possibility for generating a gas curtain in the immediate vicinity of a radiating plasma so as to permit a simple arrangement and design and a long life of the device for generating the gas curtain under extreme thermal stress. According to the invention, this object is met in that a slit nozzle is formed of a plurality of partial bodies comprising different materials to form a supersonic nozzle profile for the generation of a broad gas curtain in order to accommodate the slit nozzle to different thermal and precision-mechanical requirements in the gas inlet region and in the gas outlet region.

Abstract: The invention is directed to a method and an arrangement for stabilizing the average emitted radiation output of a pulsed radiation source. It is the object of the invention to find a novel possibility for stabilizing the average emitted radiation output of a pulsed radiation source which enables a reliable regulation even when there is no sufficiently reliable manipulated variable for influencing the emitted pulse energy (Ei). According to the invention, this object is met in that the individual pulse energy (Ei) of the current radiation pulse is measured, the deviation of the current individual pulse energy (Ei) from a previously determined target value (E0) is determined, and the pulse interval (?ti+1) preceding the triggering of the next radiation pulse is controlled depending on the magnitude of the deviation between the current individual pulse energy (Ei) and the target value (E0) of the pulse energy.

Abstract: The invention is directed to a method and arrangements for the suppression of debris in short-wavelength radiation sources based on a plasma, particularly for EUV sources for semiconductor lithography. The object of the invention is to find a novel possibility for suppressing the particle flow (debris) from a plasma which keeps the debris away from primarily optical components located downstream without excessive attenuation of the desired radiation emitted from the plasma. According to the invention, this object is met in that a buffer gas is injected inside the filter structure of the debris filter lateral to openings that are provided for passing the radiation.

Abstract: The invention is directed to an arrangement for the suppression of unwanted spectral components (‘out-of-band’ radiation, as it is called) in a plasma-based radiation source. The object of the invention is to find a novel possibility for the suppression of unwanted spectral components in radiation exiting from a plasma-based EUV radiation source which permits a simple suppression of out-of-band radiation outside the desired EUV range without requiring costly manufacturing and adjustment of diffraction gratings. This object is met according to the invention in that a filter unit is provided between the plasma and an application location of the EUV radiation, which filter unit has at least one gas curtain comprising at least one rapidly flowing gas whose molecules have no absorption maxima for the desired EUV radiation and intensive absorption maxima for other, unwanted wavelengths that are emitted, at least in the IR region.

Abstract: The invention is directed to a method and arrangements for the suppression of debris in short-wavelength radiation sources based on a plasma, particularly for EUV sources for semiconductor lithography. The object of the invention is to find a novel possibility for suppressing the particle flow (debris) from a plasma which keeps the debris away from primarily optical components located downstream without excessive attenuation of the desired radiation emitted from the plasma. According to the invention, this object is met in that a buffer gas is injected inside the filter structure of the debris filter lateral to openings that are provided for passing the radiation.