Abstract: According to some embodiments disclosed herein, a system is provided to measure a tread of a tire. The system includes a nonmagnetic layer providing a drive over surface, a magnet, and a magnetic sensor associated with the magnet. The drive over surface is adapted to receive the tire thereon including the tread to be measured. The magnet has opposing first and second magnetic poles, the nonmagnetic layer is between the drive over surface and the magnet, and the magnet is arranged so that the first magnetic pole is between the second magnetic pole and the nonmagnetic layer. The nonmagnetic layer is between the drive over surface and the magnetic sensor, and the magnetic sensor is configured to detect a magnetic field resulting from the magnet and the tire on the drive over surface.

Abstract: A temperature control system may include a thermoelectric device, a controller electrically coupled to the thermoelectric device, a heat transfer structure thermally coupled to the thermoelectric device, a temperature controlled medium thermally coupled to the thermoelectric device and a temperature feedback sensor. The controller may be configured to sense a first value of an electrical characteristic of the thermoelectric device and to generate a first electrical control to activate the thermoelectric device in response to sensing the first value of the electrical characteristic of the thermoelectric device. The controller may be further configured to sense a second value of the electrical characteristic of the thermoelectric device and to generate a second electrical control signal to activate the thermoelectric device in response to sensing the second value of the electrical characteristic of the thermoelectric device.

Abstract: A temperature control system may include a thermoelectric device, a controller electrically coupled to the thermoelectric device, a heat transfer structure thermally coupled to the thermoelectric device, a temperature controlled medium thermally coupled to the thermoelectric device and a temperature feedback sensor. The controller may be configured to sense a first value of an electrical characteristic of the thermoelectric device and to generate a first electrical control to activate the thermoelectric device in response to sensing the first value of the electrical characteristic of the thermoelectric device. The controller may be further configured to sense a second value of the electrical characteristic of the thermoelectric device and to generate a second electrical control signal to activate the thermoelectric device in response to sensing the second value of the electrical characteristic of the thermoelectric device.

Abstract: A temperature control system may include a thermoelectric device, a controller electrically coupled to the thermoelectric device, a heat transfer structure thermally coupled to the thermoelectric device, and a temperature controlled medium thermally coupled to the thermoelectric device. The controller may be configured to sense a first value of an electrical characteristic of the thermoelectric device and to generate a first electrical control signal to pump heat through the thermoelectric device in response to sensing the first value of the electrical characteristic of the thermoelectric device. The controller may be further configured to sense a second value of the electrical characteristic of the thermoelectric device and to generate a second electrical control signal to pump heat through the thermoelectric device in response to sensing the second value of the electrical characteristic of the thermoelectric device.

Abstract: An electronic assembly may include a packaging substrate, an integrated circuit (IC) semiconductor chip, a plurality of metal interconnection structures, and a thermoelectric heat pump. The integrated circuit (IC) semiconductor chip may have an active side including input/output pads thereon and a back side opposite the active side, and the IC semiconductor chip may be arranged with the active side facing the first surface of the packaging substrate. The plurality of metal interconnection structures may be between the active side of the IC semiconductor chip and the first surface of the packaging substrate, and the plurality of metal interconnection structures may provide mechanical connection between the active side of the IC semiconductor chip and the first surface of the packaging substrate. The thermoelectric heat pump may be coupled to the packaging substrate with the thermoelectric heat pump being configured to actively pump heat between the IC semiconductor chip and the packaging substrate.

Abstract: An electronic assembly may include a packaging substrate, an integrated circuit (IC) semiconductor chip, a plurality of metal interconnection structures, and a thermoelectric heat pump. The integrated circuit (IC) semiconductor chip may have an active side including input/output pads thereon and a back side opposite the active side, and the IC semiconductor chip may be arranged with the active side facing the first surface of the packaging substrate. The plurality of metal interconnection structures may be between the active side of the IC semiconductor chip and the first surface of the packaging substrate, and the plurality of metal interconnection structures may provide mechanical connection between the active side of the IC semiconductor chip and the first surface of the packaging substrate. The thermoelectric heat pump may be coupled to the packaging substrate with the thermoelectric heat pump being configured to actively pump heat between the IC semiconductor chip and the packaging substrate.

Abstract: A thermoelectric structure may include first and second thermally conductive layers. The first and second thermally conductive layers may be laterally spaced apart in a direction parallel with respect to surfaces of the first and second thermally conductive layers so that a gap is defined between edges of the first and second thermally conductive layers. A thermoelectric element may bridge the gap between the first and second thermally conductive layers, and the thermoelectric element may include a thermoelectric material on respective surface portions of the first and second thermally conductive layers.

Abstract: A temperature control system may include a thermoelectric device, and a controller electrically coupled to the thermoelectric device. The controller may be configured to apply an AC signal to the thermoelectric device, and to sense an electrical characteristic of the thermoelectric device using the AC signal. The controller may also be configured to generate an electrical control signal to pump heat through the thermoelectric device responsive to sensing the electrical characteristic of the thermoelectric device using the AC signal. Related methods are also discussed.

Abstract: A temperature control system may include a thermoelectric device and a controller electrically coupled to the thermoelectric device. The controller may be configured to sense a first value of an electrical characteristic of the thermoelectric device, and to generate a first electrical control signal to pump heat through the thermoelectric device in response to sensing the first value of the electrical characteristic of the thermoelectric device. The controller may be further configured to sense a second value of the electrical characteristic of the thermoelectric device wherein the first and second values of the electrical characteristic are different, and to generate a second electrical control signal to pump heat through the thermoelectric device in response to sensing the second electrical characteristic of the thermoelectric device with the first and second electrical control signals being different. Related methods are also discussed.

Abstract: An acceleration sensor includes an acceleration mass and a substrate mounted so that a cavity is defined therebetween and so that the acceleration mass moves relative to the substrate when an acceleration of the sensor changes. The sensor also includes a diamond field emitter for generating an electron beam through the cavity between the acceleration mass and the substrate. Accordingly, the distance between the acceleration mass and the substrate affects the current of the electron beam which is measured to determine the acceleration of the sensor. The sensor may alternately include an annular extraction electrode in a cavity between a substrate and a collector together with a diamond field emitter for generating an electron beam which passes through the annular extraction electrode. The annular extraction electrode is moveable relative to the substrate in response to changes in an acceleration acting on the sensor.

Abstract: A semiconductor device for providing stable operation over a relatively wide temperature range includes a wide bandgap semiconductor active region having an intentional dopant of a first conductivity type and an unintentional impurity of a second conductivity type which together produce a free carrier concentration at room temperature. The concentration of the intentional dopant in the active region is preferably less than 1.times.10.sup.16 cm.sup.-3 and the concentration of the unintentional impurity is less than 0.1 times the intentional dopant concentration so that the intentional dopant concentration will be less than 1000 times the free carrier concentration at room temperature. The intentional dopant concentration supplies substantially all the majority free carriers in the active region. The wide bandgap semiconductor active region is preferably diamond, IV-IV carbides, III-V nitrides and phosphides and II-VI selenides, tellurides, oxides and sulfides.

Abstract: The present invention relates to a heat dissipating substrate with a highly-oriented diamond film of a low crystal inclination and a low density grain boundaries and having a significantly high thermal conductivity. At least 90% of the surface area of the highly-oriented diamond film is covered with either (100) or (111) crystal planes, and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of the Euler angles, which represent the orientations of the crystals, between adjacent (100) or (111) crystal planes, simultaneously satisfies the following relationship: .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree., and .vertline..DELTA..gamma..vertline..ltoreq.5.degree.. In addition, this highly-oriented diamond film can be grown on a non-diamond substrates, and therefore the diamond film with a large surface area can be obtained. Thus, the present invention provides the heat dissipating substrate with an excellent thermal conductivity at low cost.

Abstract: The highly-oriented diamond film thermistor has a temperature sensing part formed of a highly-oriented diamond film grown by chemical vapor deposition. This highly-oriented diamond film satisfies the conditions that at least 65% of the film surface area is covered by (100) or (111) planes of diamond and the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of Euler angles {.alpha., .beta., .gamma.}, which represent the orientations of the crystal planes, simultaneously satisfy conditions, .vertline..DELTA..alpha..vertline..ltoreq.5.degree., .vertline..DELTA..beta..vertline..ltoreq.5.degree., .vertline..DELTA..gamma..vertline..ltoreq.5.degree., between adjacent crystal planes.

Abstract: A magnetic sensor element using highly-oriented diamond film comprises a magnetic detecting part, at least a pair of main current electrodes for flowing a main current and generating the Hall electromotive force at the magnetic detecting part, and detection electrodes for detecting said Hall electromotive force. Said magnetic detecting part is formed of a highly-oriented diamond film grown by chemical vapor deposition, at least 90% of which consists of either (100) or (111) crystal planes. Between the adjacent crystal planes, the differences {.DELTA..alpha., .DELTA..beta., .DELTA..gamma.} of the Euler angles {.alpha., .beta., .gamma.} which represent the orientation of the crystal planes, satisfy the following relations simultaneously: .vertline..DELTA..alpha..vertline..ltoreq.10.degree., .vertline..DELTA..beta..vertline..ltoreq.10.degree. and .vertline..DELTA..gamma..vertline..ltoreq.10 .degree..

Abstract: A chemical sensor includes a diode or a transistor fabricated in diamond. A diamond-based diode chemical sensor includes a first diamond layer of first conductivity type and a second diamond or non-diamond layer of second conductivity type. A relatively highly doped region is formed in the first diamond layer, adjacent an electrical contact to reduce the frequency dependance of the sensor's capacitance/voltage characteristic. A diamond-based transistor sensor includes a controlling electrode such as a gate which is configured to allow a chemical external to the transistor to alter the characteristics of the transistor. Relatively highly doped regions are formed adjacent the transistor's controlling electrodes, such as the source and drain. A heater is thermally coupled to the sensor for heating the sensor to a predetermined operating temperature. A temperature monitor is also coupled to the sensor for monitoring the sensor temperature.

Abstract: Schottky diodes and gas sensors include a diamond layer having a Schottky contact thereon and an ohmic contact thereon, wherein the diamond layer includes a highly doped region adjacent the ohmic contact to provide a low resistance ohmic contact. Dramatically reduced frequency dependence of the capacitance/voltage characteristic of Schottky diodes and gas sensors formed thereby, compared to Schottky diodes and gas sensors which do not include the highly doped region adjacent the ohmic contact, is provided. The highly doped region is preferably boron doped at a concentration of at least 10.sup.20 atoms per cubic centimeter to form an ohmic contact with a contact resistance of less than 10.sup.-3 .OMEGA.-cm.sup.2. The ohmic contact is preferably a back contact on the face of the diamond layer opposite the Schottky contact.