Abstract: A cooling apparatus for power semiconductors, which apparatus is essentially box-shaped, has two extruded cooling sections (14, 15) joined to each other. One of the cooling profiles (14) forms a first heat-conducting side wall (16), and the other cooling profile (15) forms a second heat-conducting side wall (17), opposite the first side wall (16), of the cooling apparatus (1). The side walls (16, 17) have cooling partitions (18, 19) formed on the inner sides of the latter, which cooling partitions bound cooling channels through which a cooling fluid can be conducted. Power semiconductors (4, 5) are to be attached to the outer sides of the side walls (16, 17) in a heat-conducting manner. In order to achieve the largest possible cooling surface of the cooling apparatus, the cooling partitions (18) formed on the first side wall (16) project between the cooling partitions (19) formed on the second side wall (17).

Abstract: A cooling apparatus for power semiconductors, which apparatus is essentially box-shaped, has two extruded cooling sections (14, 15) joined to each other. One of the cooling profiles (14) forms a first heat-conducting side wall (16), and the other cooling profile (15) forms a second heat-conducting side wall (17), opposite the first side wall (16), of the cooling apparatus (1). The side walls (16, 17) have cooling partitions (18, 19) formed on the inner sides of the latter, which cooling partitions bound cooling channels through which a cooling fluid can be conducted. Power semiconductors (4, 5) are to be attached to the outer sides of the side walls (16, 17) in a heat-conducting manner. In order to achieve the largest possible cooling surface of the cooling apparatus, the cooling partitions (18) formed on the first side wall (16) project between the cooling partitions (19) formed on the second side wall (17).