Abstract: Provided herein is a method of processing an electronic device including operating a processing chamber at a first temperature while a workpiece is being processed and removing the workpiece and a carrier holding the workpiece from the processing chamber while decreasing the temperature within the processing chamber to a second temperature significantly lower than the first temperature. The method also includes increasing the temperature within the processing chamber to a third temperature significantly greater than the second temperature and significantly less than the first temperature while the processing chamber has no workpiece or carrier within.

Abstract: Provided herein is a method of processing an electronic device including operating a processing chamber at a first temperature while a workpiece is being processed and removing the workpiece and a carrier holding the workpiece from the processing chamber while decreasing the temperature within the processing chamber to a second temperature significantly lower than the first temperature. The method also includes increasing the temperature within the processing chamber to a third temperature significantly greater than the second temperature and significantly less than the first temperature while the processing chamber has no workpiece or carrier within.

Abstract: The present invention is generally directed to various advanced process control methodologies for thermal oxidation processes, and various systems for accomplishing same. In one illustrative embodiment, the method comprises measuring an ambient pressure of an environment external to an oxidation chamber, determining a correction factor based upon at least the measured ambient pressure, determining at least one parameter of a thermal oxidation process to be performed in the oxidation chamber based upon the determined correction factor, and performing the thermal oxidation process comprised of the determined parameter on at least one substrate positioned in the oxidation chamber.

Abstract: An LPCVD system is provided in which a thermocouple mounting system is configured to inhibit motion of a thermocouple with respect to an LPCVD reactor. The thermocouple mounting system includes an improved thermocouple mounting bushing that forms a fixable engagement with a thermocouple mounting hub. The thermocouple mounting bushing compresses a clip ring against both the thermocouple and the thermocouple mounting hub during use to inhibit motion of the thermocouple. The improved thermocouple mounting system inhibits contact between the thermocouple and a quartz liner within the reactor during use, thus minimizing formation of contaminating particles. The thermocouple mounting system further maintains the thermocouple in proper alignment according to design criteria such that accurate temperature readings are supplied to a temperature controller during use.

Abstract: An LPCVD system is provided in which a mass flow controller is used to control the flow rate of gases passing from a reaction chamber to a vacuum pump. The mass flow controller is disposed within a secondary outlet conduit which connects a first point to a second point of a primary outlet conduit. The primary outlet conduit extends between and in gaseous communication with the reaction chamber and the vacuum pump. The secondary outlet conduit permits gases flowing from the reaction chamber to bypass a primary valve disposed within the outlet conduit downstream of the first point and upstream of the second point. The mass flow controller can advantageously maintain the flow rate of the gases at a setpoint value for a period of time before the flow rate begins to drop. As such, the mass flow controller provides for a reduction in the time required to evacuate the vacuum chamber.