Abstract: Embodiments of the present disclosure relate to storage processor and storage system. A storage processor comprises a housing provided with a cover and a main power supply input, which, for example, connects an external power source to supply power to the storage processor. A battery is disposed within the housing and configured to continue supplying power to the storage processor in response to the main power supply input being cut off. A protection device is disposed within the housing and configured to disable the battery to supply power to the storage processor in response to determining that the cover is opened.

Abstract: Embodiments of the present disclosure relate to a solution for fault unit indication. In some embodiments, there is provided a method for positioning a fault unit. The method comprises supplying power to a controller and a light emitting diode (LED) circuit by a battery module, wherein the LED circuit includes a plurality of LEDs associated with a plurality of units. The method further comprises transmitting a trigger signal to the controller by the battery module in response to receiving a control signal for triggering positioning, such that an LED of the plurality of LEDs associated with a fault unit is turned on.

Abstract: Embodiments of the present disclosure relate to storage processor and storage system. A storage processor comprises a housing provided with a cover and a main power supply input, which, for example, connects an external power source to supply power to the storage processor. A battery is disposed within the housing and configured to continue supplying power to the storage processor in response to the main power supply input being cut off. A protection device is disposed within the housing and configured to disable the battery to supply power to the storage processor in response to determining that the cover is opened.

Abstract: A latching assembly is configured for releasably coupling a first component to a second component. The latching assembly includes an actuator portion configured to be longitudinally-displaceable along an axis of insertion of the first component and between an engaged position and a disengaged position. One or more ejector assemblies include a first end and a second end. The one or more ejector assemblies are configured to: slidably engage the actuator portion on the first end, releasably engage a locking structure on the second end, and pivot about a rotation point positioned between the first end and the second end.

Abstract: A latching assembly is configured for releasably coupling a first component to a second component. The latching assembly includes an actuator portion configured to be longitudinally-displaceable along an axis of insertion of the first component and between an engaged position and a disengaged position. One or more ejector assemblies include a first end and a second end. The one or more ejector assemblies are configured to: slidably engage the actuator portion on the first end, releasably engage a locking structure on the second end, and pivot about a rotation point positioned between the first end and the second end.

Abstract: Embodiments of the present disclosure relate to a solution for fault unit indication. In some embodiments, there is provided a method for positioning a fault unit. The method comprises supplying power to a controller and a light emitting diode (LED) circuit by a battery module, wherein the LED circuit includes a plurality of LEDs associated with a plurality of units. The method further comprises transmitting a trigger signal to the controller by the battery module in response to receiving a control signal for triggering positioning, such that an LED of the plurality of LEDs associated with a fault unit is turned on.

Abstract: A method of treating a disorder such as rheumatoid arthritis or multiple sclerosis in a subject is carried out by administering to the subject a composition comprising a modulator compound of Th1 differentiation or Th17 expansion.

Abstract: A method of increasing DRAM cell capacitance via formation of deep, wide diameter trench capacitor structures, has been developed. An underlying semiconductor substrate is used to accommodate deep, wide diameter trench capacitor structures while an overlying, bonded, thinned semiconductor substrate is used to accommodate narrow diameter trench structures, in turn used for communication to the underlying deep trench capacitor structures, as well as to accommodate the elements of the DRAM device, such as the transfer gate transistors. The use of an underlying semiconductor substrate for accommodation of the trench capacitor structures allows a wider diameter structures to be used, thus reducing patterning difficulties encountered when forming narrow diameter, deep trench capacitor structures.