Abstract: An embodiment of a storage device for medical products includes a cabinet defining an enclosure having a plurality of compartments. In addition, the storage device includes a plurality of storage containers, each storage container configured to be inserted into a corresponding one of the plurality of compartments. Further, the storage device includes an actuation assembly including a plurality of arms that are configured to engage the plurality of storage containers so as to secure the plurality of storage containers in the plurality of compartments. Still further, the storage device includes a release mechanism that is configured to simultaneously actuate each of the plurality of arms to release the plurality of storage containers from the plurality of compartments.

Abstract: A method and circuit for implementing enhanced performance dynamic evaluation, and a design structure on which the subject circuit resides are provided. The dynamic evaluation circuit includes a combined precharge and keeper device connected to a precharge node. The dynamic evaluation circuit includes control logic providing a control input to the combined precharge and keeper device. The combined precharge and keeper device responsive to the control input holds the precharge node precharged when the precharge node is not discharged early in an evaluate cycle.

Abstract: A method and circuit for implementing enhanced performance dynamic evaluation, and a design structure on which the subject circuit resides are provided. The dynamic evaluation circuit includes a combined precharge and keeper device connected to a precharge node. The dynamic evaluation circuit includes control logic providing a control input to the combined precharge and keeper device. The combined precharge and keeper device responsive to the control input holds the precharge node precharged when the precharge node is not discharged early in an evaluate cycle.

Abstract: A method and circuit for implementing enhanced performance dynamic evaluation, and a design structure on which the subject circuit resides are provided. The dynamic evaluation circuit includes a combined precharge and keeper device connected to a precharge node. The dynamic evaluation circuit includes control logic providing a control input to the combined precharge and keeper device. The combined precharge and keeper device responsive to the control input holds the precharge node precharged when the precharge node is not discharged early in an evaluate cycle.

Abstract: A method and circuit for implementing enhanced performance dynamic evaluation, and a design structure on which the subject circuit resides are provided. The dynamic evaluation circuit includes a combined precharge and keeper device connected to a precharge node. The dynamic evaluation circuit includes control logic providing a control input to the combined precharge and keeper device. The combined precharge and keeper device responsive to the control input holds the precharge node precharged when the precharge node is not discharged early in an evaluate cycle.

Abstract: A deep sleep wakeup signal is received at a first memory bank. A first gated memory array supply voltage is increased in response to the receiving the deep sleep wakeup signal at the first memory bank. The first memory array supply voltage is applied to a first memory array. The deep sleep wakeup signal is forwarded to a second memory bank in response to determining the first gated memory array supply voltage has reached a specified voltage.

Abstract: A deep sleep wakeup signal is received at a first memory bank. A first gated memory array supply voltage is increased in response to the receiving the deep sleep wakeup signal at the first memory bank. The first memory array supply voltage is applied to a first memory array. The deep sleep wakeup signal is forwarded to a second memory bank in response to determining the first gated memory array supply voltage has reached a specified voltage.

Abstract: A deep sleep wakeup signal is received at a first memory bank. A first gated memory array supply voltage is increased in response to the receiving the deep sleep wakeup signal at the first memory bank. The first memory array supply voltage is applied to a first memory array. The deep sleep wakeup signal is forwarded to a second memory bank in response to determining the first gated memory array supply voltage has reached a specified voltage.

Abstract: A semiconductor chip and method for diagnostic testing of combinational logic in a logic and array system including Logic Built in Self Test (LBIST) diagnostics are provided. The semiconductor chip includes a logic and array system, an LBIST system, a clocking module, and an addressing module. The method for diagnostic testing includes providing an initialization pattern to an array in the logic and array system, applying a diagnostic control setup, and running the diagnostic test. The diagnostic control setup includes firing a clock every diagnostic test clock cycle and selecting an address from a subset of an address space.

Abstract: A static random access memory with write-through capability includes a memory cell configured to store a bit of data. A write enable signal is configured to enable writing a write value from a write line input into the static random access memory cell and to enable reading a read value from the memory cell onto a DOT line. A local evaluation circuit is configured to place the write value from the write line onto the DOT line during a single clock cycle in which the value is being written into the memory cell. An early read suppression circuit is configured to electrically isolate the DOT line from a data out line thereby preventing a leakage current loss from the local evaluation circuit and is also configured to make the value placed on the DOT line to be read from the data out line during the single clock cycle.

Abstract: A static random access memory with write-through capability includes a memory cell configured to store a bit of data. A write enable signal is configured to enable writing a write value from a write line input into the static random access memory cell and to enable reading a read value from the memory cell onto a DOT line. A local evaluation circuit is configured to place the write value from the write line onto the DOT line during a single clock cycle in which the value is being written into the memory cell. An early read suppression circuit is configured to electrically isolate the DOT line from a data out line thereby preventing a leakage current loss from the local evaluation circuit and is also configured to make the value placed on the DOT line to be read from the data out line during the single clock cycle.

Abstract: A system, method and program product are described in which schematics in a library that a user has tagged are read as ready for layout. The difficulty of each layout is assessed based on statistics indicative of the complexity of the schematic. The statistics may regard the number of connections, pins, devices, and other schematic information. The information is used to calculate the total amount of effort required to complete the design and generate a report.

Abstract: Embodiments of the invention provide techniques for synchronizing virtual locations to real locations. In one embodiment, data sources are monitored to detect events that affect real locations. A filter specified by an owner of the virtual location may be used to detect keywords indicating events affecting a particular location. In the event that such events are detected, the owner may be notified to modify the virtual location to match the real location. Optionally, the virtual location may be automatically modified to match the real location.

Abstract: A system, method and program product are described in which schematics in a library that a user has tagged are read as ready for layout. The difficulty of each layout is assessed based on statistics indicative of the complexity of the schematic. The statistics may regard the number of connections, pins, devices, and other schematic information. The information is used to calculate the total amount of effort required to complete the design and generate a report.

Abstract: A method for passing data from an input to an output of a domino read access path in domino read SRAM memory including receiving at least a portion of the input data from a latch configuration, gating a global precharge signal, gating a bit select circuitry signal, driving the input data statically through a transmission gate of a static bypass multiplexer to the global dot of the domino read SRAM memory, initiating a write around cycle signal, offsetting the write around signal input into the static bypass multiplexer and the precharge signal by at least one phase using a wave shaper, driving the input data from the global dot through a keeper circuit, and driving the input data from the keeper circuit to at least one NAND gate of a pair of cross-coupled NAND gates, the pair of cross-coupled NAND gates being configured in a transparent state.

Abstract: A device maintains a state of a precharged dot line that is periodically precharged by a global precharge signal. The device includes a data input signal that can have a selected one of a first value and a second value. The first value is a value that would be reflected by the dot line being in a charged state. A precharge circuit is responsive to a global precharge signal and is configured to precharge the dot line. A guaranteed write through logic device is responsive to the data input signal. The guaranteed write through logic device ensures that charge is applied to the dot line whenever the data. A guaranteed write through inhibitor that is responsive to a write through gate signal is configured to inhibit selectively the guaranteed write through logic device from applying charge to the dot line when the write through gate signal is in a guarantee inhibit state.