Abstract: A composition of matter and method of forming copper indium gallium sulfide (CIGS), copper indium gallium selenide (CIGSe), or copper indium gallium telluride thin film via conversion of layer-by-layer (LbL) assembled Cu—In—Ga oxide (CIGO) nanoparticles and polyelectrolytes. CIGO nanoparticles are created via a flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films are assembled by alternately dipping a substrate into a solution of either polydopamine (PDA) or polystyrenesulfonate (PSS) and then in the CIGO-PAH dispersion to fabricate films as thick as 1-2 microns. After LbL deposition, films are oxidized to remove polymer and sulfurized, selenized, or tellurinized to convert CIGO to CIGS, CIGSe, or copper indium gallium telluride.

Abstract: Methods for producing nanostructured, hydrophobic, superhydrophobic, or hydrophilic, transmissive, anti-reflective surfaces are described. The method for providing a hydrophilic surface includes steps of providing a substrate that is transmissive at at least one wavelength in the infrared to ultraviolet range of the electromagnetic spectrum and comprises at least one surface including nanostructures of a size smaller than the at least one wavelength; and functionalizing the at least one surface with hydroxyl groups thereon. A hydrophobic or superhydrophobic surface can be provided by contacting the at least one surface with a hydrophobic fluoropolymer for a time sufficient to apply at least a monolayer of fluorine-containing material to the at least one surface. These methods provide devices having excellent transmittance and anti-reflectance properties and which are resistant to seawater.

Abstract: A composite and a coating having engineered reflective properties are described. The composite comprises a matrix and flakes of a multilayer polymer film including one or more bilayers including at least a layer of a first polymer and a layer of a second polymer having a different refractive index than the first polymer. The coating described includes the composite as applied to a surface and has a reflectance of at least 10% for a selected wavelength range and a transmittance of at least 50% at wavelengths outside of the selected wavelength range. Also described are methods for forming the composite and the coating.

Abstract: A system for transmitting power to a remote equipment, the system including a first laser source that generates a first laser beam; a first tracking device operatively connected to the first laser source, wherein the first tracking device controls a direction of the first laser beam; and a first photovoltaic device operatively connected to the remote equipment located remotely from the first laser source and the first tracking device, wherein the first photovoltaic device includes a semiconductor material that generates an electric current in response to absorbing the first laser beam, and wherein a first wavelength of the first laser beam is within an eye-safer range.

Abstract: A method of containing molten aluminum using non-wetting materials comprising depositing MgAl2O4, or one selected from an oxide, Al2O3, nitride, AlN, BN, carbide, and SiC, onto a crucible. An apparatus for containment of molten aluminum using non-wetting materials comprising a layer of MgAl2O4, or one selected from an oxide, Al2O3, nitride, AlN, BN, carbide, and SiC, deposited onto a crucible.

Abstract: A method of containing molten aluminum using non-wetting materials comprising depositing MgAl2O4, or one selected from an oxide, Al2O3, nitride, AlN, BN, carbide, and SiC, onto a crucible. An apparatus for containment of molten aluminum using non-wetting materials comprising a layer of MgAl2O4, or one selected from an oxide, Al2O3, nitride, AlN, BN, carbide, and SiC, deposited onto a crucible.

Abstract: A microstructured ZnO coating that improves the performance of Cu(In,Ga)Se2 (CIGS) photovoltaic (PV) devices via two mechanisms; it acts an antireflective layer with superior non-normal performance to thin film anti-reflective (AR) coatings, and it scatters a large fraction of incoming light at a large angle, resulting in absorption that is on average closer to the p-n junction.

Abstract: A composition of matter and method of forming copper indium gallium sulfide (CIGS), copper indium gallium selenide (CIGSe), or copper indium gallium telluride thin film via conversion of layer-by-layer (LbL) assembled Cu—In—Ga oxide (CIGO) nanoparticles and polyelectrolytes. CIGO nanoparticles are created via a flame-spray pyrolysis method using metal nitrate precursors, subsequently coated with polyallylamine (PAH), and dispersed in aqueous solution. Multilayer films are assembled by alternately dipping a substrate into a solution of either polydopamine (PDA) or polystyrenesulfonate (PSS) and then in the CIGO-PAH dispersion to fabricate films as thick as 1-2 microns. After LbL deposition, films are oxidized to remove polymer and sulfurized, selenized, or tellurinized to convert CIGO to CIGS, CIGSe, or copper indium gallium telluride.

Abstract: A method for passivating the surface of crystalline iron disulfide (FeS2) by encapsulating it in crystalline zinc sulfide (ZnS). Also disclosed is the related product comprising FeS2 encapsulated by ZnS in which the sulfur atoms at the FeS2 surfaces are passivated. Additionally disclosed is a photovoltaic (PV) device incorporating FeS2 encapsulated by ZnS.

Abstract: A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.

Abstract: A method and apparatus for forming a thin film of a copper indium gallium selenide (CIGS)-type material are disclosed. The method includes providing first and second targets in a common sputtering chamber. The first target includes a source of CIGS material, such as an approximately stoichiometric polycrystalline CIGS material, and the second target includes a chalcogen, such as selenium, sulfur, tellurium, or a combination of these elements. The second target provides an excess of chalcogen in the chamber. This can compensate, at least in part, for the loss of chalcogen from the CIGS-source in the first target, resulting in a thin film with a controlled stoichiometry which provides effective light absorption when used in a solar cell.

Abstract: An article made by: sputtering molybdenum onto a flexible glass substrate, and depositing a photovoltaic material on the molybdenum by sputtering, thermal evaporation, multi-target ternary or binary sputtering, or nanoparticle techniques.

Abstract: A method for forming a wet-etchable, sacrificial lift-off layer or layers compatible with high temperature processing, a sacrificial layer, defined as consisting of a single film of one material or multiple films of multiple materials, that can tolerate high temperatures, is deposited on a substrate, called the original substrate, by sputtering or another suitable technique (e.g. evaporation, pulsed laser deposition, wet chemistry, etc.). Intermediate steps result in a lift-off layer attached to the lift-off substrate, that allow for separating the product from the original substrate.

Abstract: A method of: providing one or more spent sputtering targets comprising a photovoltaic compound and grinding the photovoltaic compound in an inert environment to form a powder.

Abstract: An article made by: depositing a bottom contact onto a flexible glass substrate, and depositing a photovoltaic material on the bottom contact.

Abstract: A method of containing molten aluminum using non-wetting materials comprising depositing MgAl2O4, or one selected from an oxide, Al2O3, nitride, AlN, BN, carbide, and SiC, onto a crucible. An apparatus for containment of molten aluminum using non-wetting materials comprising a layer of MgAl2O4, or one selected from an oxide, Al2O3, nitride, AlN, BN, carbide, and SiC, deposited onto a crucible.

Abstract: A method of forming a CZT(S,Se) thin film from a quaternary target involves sputtering a quaternary target onto a substrate, wherein the quaternary target comprises (a) copper, (b) zinc, (c) tin, and (d) selenium and/or sulfur, wherein each component (a) through (d) is present in the quaternary target within ±50% of a 2:1:1:4 molar ratio, respectively, thereby forming a CZT(S,Se) thin film on the substrate, wherein the CZT(S,Se) thin film has a kesterite crystalline phase and a band gap of about 1.0 to 1.5 eV. In an embodiment, a ternary target is employed.

Abstract: A p-type transparent conductive material can comprise a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate.

Abstract: A bulk barium copper sulfur fluoride (BCSF) material can be made by combining Cu2S, BaS and BaF2, heating the ampoule between 400 and 550° C. for at least two hours, and then heating the ampoule at a temperature between 550 and 950° C. for at least two hours. The BCSF material may be doped with potassium, rubidium, or sodium. Additionally, a p-type transparent conductive material can comprise a thin film of BCSF on a substrate where the film has a conductivity of at least 1 S/cm. The substrate may be a plastic substrate, such as a polyethersulfone, polyethylene terephthalate, polyimide, or some other suitable plastic or polymeric substrate.

Abstract: A method for making a rare earth doped polycrystalline ceramic laser gain medium by hot pressing a rare earth doped polycrystalline powder where the doping concentration is greater than 2% and up to 10% and where the grain size of the final ceramic is greater than 2 ?m. The polycrystalline powder can be Lu2O3, Y2O3, or Sc2O3, and the rare earth dopant can be Yb3+, Er3+, Tm3+, or Ho3+. Also disclosed is the related rare earth doped polycrystalline ceramic laser gain medium prepared by this method.