Abstract: A hand tool includes a head section which may include a top jaw and a bottom jaw, a handle section which may include a top handle and a bottom handle, a joint assembly which may operably couple the head section to the handle section, and a pin assembly which may include a first pin disposed at a distal end of the top jaw and a second pin disposed at a distal end of the bottom jaw. A high friction surface may be disposed over at least a portion of the first and second pins.

Abstract: A hand tool may include a head section which may include a top jaw and a bottom jaw, a handle section which may include a top handle and a bottom handle, a joint assembly which may operably couple the head section to the handle section, a pin assembly which may include a first pin disposed at a distal end of the top jaw and a second pin disposed at a distal end of the bottom jaw, and a gripping assembly which may include a first gripping surface disposed at the top jaw proximate to the first pin and a second gripping surface disposed at the bottom jaw proximate to the second pin. The first and second gripping surfaces may grip objects therebetween responsive to the top jaw and the bottom jaw moving towards each other.

Abstract: A extractor insert may a body and a securing lip. The body may have a fastener engagement recess. The securing lip may extend radially away from a central axis beyond an exterior of the body. The fastener engagement recess may be an internal channel through the body and is open at a driven end and a drive end. Engagement ribs may extend from internal sidewalls of the body towards the central axis, and each engagement rib may include an apex that extends along a length of the engagement rib. Each engagement rib may have an opposing engagement rib such that apexes of the opposing engagement ribs may be disposed on a common plane with the central axis. Further, each apex may taper at a taper angle such that a distance between apexes of opposing engagement ribs is largest at the drive end and smallest at the driven end.

Abstract: Damascene or non-damascene processing when used with a method that includes (a) forming a mask having an opening therethrough on a structure, said opening having sidewalls; (b) implanting an inhibiting species into said structure through the opening so as to form an inhibiting region in said structure; and (c) growing a dielectric layer on the structure in said opening, wherein the inhibiting region partially inhibits growth of the dielectric layer is capable of forming a semiconductor structure, e.g., MOSFET or anti-fuse, including a dual thickness dielectric layer. Alternatively, the dual thickness dielectric can be formed by replacing the inhibiting species mentioned above with a dielectric growth enhancement species which forms an enhancing region in the structure which aids in the growth of the dielectric layer.

Abstract: Damascene or non-damascene processing when used with a method that includes (a) forming a mask having an opening therethrough on a structure, said opening having sidewalls; (b) implanting an inhibiting species into said structure through the opening so as to form an inhibiting region in said structure; and (c) growing a dielectric layer on the structure in said opening, wherein the inhibiting region partially inhibits growth of the dielectric layer is capable of forming a semiconductor structure, e.g., MOSFET or anti-fuse, including a dual thickness dielectric layer. Alternatively, the dual thickness dielectric can be formed by replacing the inhibiting species mentioned above with a dielectric growth enhancement species which forms an enhancing region in the structure which aids in the growth of the dielectric layer.

Abstract: Damascene or non-damascene processing when used with a method that includes (a) forming a mask having an opening therethrough on a structure, said opening having sidewalls; (b) implanting an inhibiting species into said structure through the opening so as to form an inhibiting region in said structure; and (c) growing a dielectric layer on the structure in said opening, wherein the inhibiting region partially inhibits growth of the dielectric layer is capable of forming a semiconductor structure, e.g., MOSFET or anti-fuse, including a dual thickness dielectric layer. Alternatively, the dual thickness dielectric can be formed by replacing the inhibiting species mentioned above with a dielectric growth enhancement species which forms an enhancing region in the structure which aids in the growth of the dielectric layer.

Abstract: Damascene or non-damascene processing when used with a method that includes (a) forming a mask having an opening therethrough on a structure, said opening having sidewalls; (b) implanting an inhibiting species into said structure through the opening so as to form an inhibiting region in said structure; and (c) growing a dielectric layer on the structure in said opening, wherein the inhibiting region partially inhibits growth of the dielectric layer is capable of forming a semiconductor structure, e.g., MOSFET or anti-fuse, including a dual thickness dielectric layer. Alternatively, the dual thickness dielectric can be formed by replacing the inhibiting species mentioned above with a dielectric growth enhancement species which forms an enhancing region in the structure which aids in the growth of the dielectric layer.