Patents by Inventor Jesse Samsonov Appel

Jesse Samsonov Appel has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fabrication of indium-doped silicon by the czochralski method
    Patent number: 10060045
    Abstract: A method of growing a monocrystalline silicon ingot is described. The method includes the steps of providing a monocrystalline ingot growing apparatus including a chamber having an internal pressure, and a crucible disposed within the chamber, preparing a silicon melt in the crucible, introducing an inert gas into the chamber from a gas inlet above the silicon melt, wherein the inert gas flows over the surface of the silicon melt and has a flow rate, introducing a volatile dopant including indium into the silicon melt, growing an indium-doped monocrystalline silicon ingot, and controlling the indium dopant concentration in the ingot by adjusting the ratio of the inert gas flow rate and the internal pressure of the chamber.
    Type: Grant
    Filed: December 27, 2013
    Date of Patent: August 28, 2018
    Assignee: Corner Star Limited
    Inventors: Roberto Scala, Luigi Bonanno, Stephan Haringer, Armando Giannattasio, Valentino Moser, Jesse Samsonov Appel, Martin Jeffrey Binns
  • FABRICATION OF INDIUM-DOPED SILICON BY THE CZOCHRALSKI METHOD
    Publication number: 20160215413
    Abstract: A method of growing a monocrystalline silicon ingot is described. The method includes the steps of providing a monocrystalline ingot growing apparatus including a chamber having an internal pressure, and a crucible disposed within the chamber, preparing a silicon melt in the crucible, introducing an inert gas into the chamber from a gas inlet above the silicon melt, wherein the inert gas flows over the surface of the silicon melt and has a flow rate, introducing a volatile dopant including indium into the silicon melt, growing an indium-doped monocrystalline silicon ingot, and controlling the indium dopant concentration in the ingot by adjusting the ratio of the inert gas flow rate and the internal pressure of the chamber.
    Type: Application
    Filed: December 27, 2013
    Publication date: July 28, 2016
    Inventors: Roberto Scala, Luigi Bonanno, Stephan Haringer, Armando Giannattasio, Valentino Moser, Jesse Samsonov Appel, Martin Jeffrey Binns
  • INDIUM-DOPED SILICON WAFER AND SOLAR CELL USING THE SAME
    Publication number: 20150333193
    Abstract: A solar cell is provided, the solar cell fabricated from an indium-doped monocrystalline silicon wafer sliced from an ingot grown by the Czochralski method. The solar cell is characterized by high efficiency and low light induced degradation.
    Type: Application
    Filed: December 27, 2013
    Publication date: November 19, 2015
    Inventors: Jesse Samsonov Appel, Martin Jeffrey Binns, Roberto Scala, Luigi Bonanno, Stephan Haringer, Armando Giannattasio, Valentino Moser