Abstract: A specialized physical vapor deposition process provides dense amorphous semiconducting material with exceptionally smooth morphology. In particular, the process provides dense, smooth amorphous silicon useful as a hard mask for etching optical and semiconductor devices and as a high refractive index material in optical devices. DC sputtering of a planar target of intrinsic crystalline semiconducting material in the presence of a sputtering gas under a condition of uniform target erosion is used to deposit amorphous semiconducting material on a substrate. DC power that is modulated by AC power is applied to the target. The process provides dense, smooth amorphous silicon at high deposition rates. A method of patterning a material layer including forming a hard mask layer of amorphous silicon on a material layer according to the present DC sputtering process is also provided.

Abstract: A specialized physical vapor deposition process provides dense amorphous semiconducting material with exceptionally smooth morphology. In particular, the process provides dense, smooth amorphous silicon useful as a hard mask for etching optical and semiconductor devices and as a high refractive index material in optical devices. DC sputtering of a planar target of intrinsic crystalline semiconducting material in the presence of a sputtering gas under a condition of uniform target erosion is used to deposit amorphous semiconducting material on a substrate. DC power that is modulated by AC power is applied to the target. The process provides dense, smooth amorphous silicon at high deposition rates. A method of patterning a material layer including forming a hard mask layer of amorphous silicon on a material layer according to the present DC sputtering process is also provided.