Abstract: ALD versus PVD IGZO Channel and AlOx channel passivation in a vertical wordline driver. A pillar is formed in a stacked layer semiconductor structure including a source layer, wherein forming the pillar exposes layers in the semiconductor structure and exposes a portion of the source layer at the bottom of the pillar. A gate oxide film is formed over exposed layers in the semiconductor structure and over the exposed portion of the source layer. A sacrificial silicon liner is formed over the gate oxide, and subsequently both the gate oxide and the sacrificial silicon liner are removed from the pillar bottom in an anisotropic dry etch (“punch”) process that exposes the source layer.

Abstract: A memory array including integrated word line (WL) contact structures are disclosed. The memory array comprises a plurality of WLs that includes at least a first WL and a second WL. An integrated WL contact structure includes a first WL contact and a second WL contact for the first WL and the second WL, respectively. The second WL contact extends through the first WL contact. For example, the second WL contact is nested within the first WL contact. An intervening isolation material isolates the second WL contact from the first WL contact. In an example, the second WL contact extends through a hole in the first WL to reach the second WL. The isolation material isolates the second WL contact from sidewalls of the hole in the first WL.

Abstract: A memory array including integrated word line (WL) contact structures are disclosed. The memory array comprises a plurality of WLs that includes at least a first WL and a second WL. An integrated WL contact structure includes a first WL contact and a second WL contact for the first WL and the second WL, respectively. The second WL contact extends through the first WL contact. For example, the second WL contact is nested within the first WL contact. An intervening isolation material isolates the second WL contact from the first WL contact. In an example, the second WL contact extends through a hole in the first WL to reach the second WL. The isolation material isolates the second WL contact from sidewalls of the hole in the first WL.

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include net chemisorption of a self-assembled monolayer on the second surface to prevent deposition of the film on the second surface.

Abstract: Methods of depositing a film selectively onto a first substrate surface relative to a second substrate surface are described. The methods include net chemisorption of a self-assembled monolayer on the second surface to prevent deposition of the film on the second surface.

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.

Abstract: Methods for the deposition of a silicon-containing film using an organic reactant, a silicon precursor and a plasma.

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. No plasma excites the halogen-containing precursor either remotely or locally in embodiments.

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.

Abstract: Methods for the deposition of a silicon-containing film using an organic reactant, a silicon precursor and a plasma.

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium, silicon carbide, silicon carbon nitride and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. No plasma excites the halogen-containing precursor either remotely or locally in embodiments.

Abstract: Methods of selectively etching metal-containing materials from the surface of a substrate are described. The etch selectively removes metal-containing materials relative to silicon-containing films such as silicon, polysilicon, silicon oxide, silicon germanium and/or silicon nitride. The methods include exposing metal-containing materials to halogen containing species in a substrate processing region. A remote plasma is used to excite the halogen-containing precursor and a local plasma may be used in embodiments. Metal-containing materials on the substrate may be pretreated using moisture or another OH-containing precursor before exposing the resulting surface to remote plasma excited halogen effluents in embodiments.