Abstract: A MIM capacitor technique is described wherein bottom plates (electrodes) are composed of gate conductor material, and are formed in the same layer, in the same way, using the same masking and processing steps as transistor gates. The top plates (electrodes) are formed using a simple single-mask, single-damascene process. Electrical connections to both electrodes of the MIM capacitor are made via conventional BEOL metallization, requiring no additional dedicated process steps. The bottom plates (formed of gate conductor material) of the MIM capacitors overlie STI regions formed at the same time as STI regions between transistors. Method and apparatus are described.