Patents by Inventor Jessie C. Shan

Jessie C. Shan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for depositing high density plasma chemical vapor deposition oxide in high aspect ratio gaps
    Patent number: 6365015
    Abstract: A method of forming a HDPCVD oxide layer over metal lines, the metal lines having gaps between the metal lines having an aspect ratio of two or more. The method comprises the steps of: forming a liner oxide layer over the metal lines; and forming an HDPCVD oxide layer over the liner oxide layer, the formation of the HDPCVD oxide layer being done such that the deposition-to-sputter ratio is increasing as the gaps are being filled.
    Type: Grant
    Filed: June 19, 2000
    Date of Patent: April 2, 2002
    Assignee: Wafertech, Inc.
    Inventors: Jessie C. Shan, Chang-Kuei Huang, Steve H. Y. Yang
  • Method for depositing high density plasma chemical vapor deposition oxide in high aspect ratio gaps
    Patent number: 6129819
    Abstract: A method of forming a HDPCVD oxide layer over metal lines, the metal lines having gaps between the metal lines having an aspect ratio of two or more. The method comprises the steps of: forming a liner oxide layer over the metal lines; and forming an HDPCVD oxide layer over the liner oxide layer, the formation of the HDPCVD oxide layer being done such that the deposition-to-sputter ratio is increasing as the gaps are being filled.
    Type: Grant
    Filed: November 25, 1998
    Date of Patent: October 10, 2000
    Assignee: Wafertech, LLC
    Inventors: Jessie C. Shan, Chang-Kuei Huang, Steve H. Y. Yang