Abstract: A semiconductor structure having a Si substrate heterointegrated with GaN and a method for fabricating the same is disclosed. The method uses a (100) silicon substrate to fabricate a hundred nanometer scale hole and uses wet etching to etch the silicon substrate, thereby exposing the (111) crystal surface of the silicon substrate. The (111) crystal surface is used as a nucleating crystal surface of an AlN buffer layer and GaN. When GaN is grown, silane is reacted with GaN to adjust the concentration of doping silicon atoms into GaN, thereby forming a semiconductor structure having a Si substrate heterointegrated with GaN.

Abstract: A method of measuring a banding artefact in an image includes generating a gradient profile from the image, where the gradient profile includes respective gradient magnitudes of pixels of the image; generating, using the gradient profile, a candidate banding pixel (CBP) map, where each location of the CBP map is such that a gradient magnitude of the gradient profile of a corresponding pixel of the image being greater than a first threshold and smaller than a second threshold; generating, using the CBP map, a banding edge map (BEM), where the BEM includes connected banding edges of the image; generating, using the BEM, a banding visibility map (BVM), where the BVM includes a respective banding metric for at least some pixels of the image; and generating a banding index of the image using the BVM.

Abstract: A silicon metal-oxide-semiconductor field effect transistor with a wide-bandgap III-V compound semiconductor drain and a method for fabricating the same are disclosed. The method fabricates a hundred nanometer-scale hole in a (100) silicon substrate to expose the (111) facet of the silicon substrate, which favors to use selective area growth to form lattice matched III-V materials with high quality.

Abstract: A method of measuring a banding artefact in an image includes generating a gradient profile from the image, where the gradient profile includes respective gradient magnitudes of pixels of the image; generating, using the gradient profile, a candidate banding pixel (CBP) map, where each location of the CBP map is such that a gradient magnitude of the gradient profile of a corresponding pixel of the image being greater than a first threshold and smaller than a second threshold; generating, using the CBP map, a banding edge map (BEM), where the BEM includes connected banding edges of the image; generating, using the BEM, a banding visibility map (BVM), where the BVM includes a respective banding metric for at least some pixels of the image; and generating a banding index of the image using the BVM.

Abstract: A silicon metal-oxide-semiconductor field effect transistor with a wide-bandgap III-V compound semiconductor drain and a method for fabricating the same are disclosed. The method fabricates a hundred nanometer-scale hole in a (100) silicon substrate to expose the (111) facet of the silicon substrate, which favors to use selective area growth to form lattice matched III-V materials with high quality.

Abstract: A semiconductor structure having a Si substrate heterointegrated with GaN and a method for fabricating the same is disclosed. The method uses a (100) silicon substrate to fabricate a hundred nanometer scale hole and uses wet etching to etch the silicon substrate, thereby exposing the (111) crystal surface of the silicon substrate. The (111) crystal surface is used as a nucleating crystal surface of an AlN buffer layer and GaN. When GaN is grown, silane is reacted with GaN to adjust the concentration of doping silicon atoms into GaN, thereby forming a semiconductor structure having a Si substrate heterointegrated with GaN.

Abstract: A semiconductor structure having a Si substrate heterointegrated with GaN and a method for fabricating the same is disclosed. The method uses a (100) silicon substrate to fabricate a hundred nanometer scale hole and uses wet etching to etch the silicon substrate, thereby exposing the (111) crystal surface of the silicon substrate. The (111) crystal surface is used as a nucleating crystal surface of an AlN buffer layer and GaN. When GaN is grown, silane is reacted with GaN to adjust the concentration of doping silicon atoms into GaN, thereby forming a semiconductor structure having a Si substrate heterointegrated with GaN.