Abstract: Methods of forming semiconductor devices by enhancing selective deposition are described. In some embodiments, a blocking layer is deposited on a metal surface before deposition of a barrier layer. A substrate with a metal surface, a dielectric surface and an aluminum oxide surface has a blocking layer deposited on the metal surface using an alkylsilane.

Abstract: Methods for selectively depositing on self-assembled monolayer (SAM) are disclosed. Some embodiments of the disclosure utilize a precursor of a Formula (I), Formula (II), Formula (III), and Formula (IV): RnSi(NR?R?)(4-n) (III), RnSiX(4-n) (IV), wherein R1 and R2 are independently selected from substituted or unsubstituted C1-C20 alkyl, or R1 and R2 form a substituted or unsubstituted C1-C20 cycloalkyl ring, and wherein R3, R4, R5, R6, Rn are independently selected from hydrogen, substituted or unsubstituted C1-C20 alkyl, substituted or unsubstituted C1-C20 alkoxy, and substituted or unsubstituted C1-C20 vinyl, X is a halide selected from Cl, Br, and I, and n is an integer from 1 to 3, to form a self-assembled monolayer (SAM) on a damaged silicon nitride layer to prevent critical dimension blow out of a feature in a silicon nitride layer substrate.