Patents by Inventor Jeung Hoon Han
Jeung Hoon Han has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11028481Abstract: Disclosed is an apparatus and method of processing substrate, which facilitates to improve deposition uniformity of a thin film deposited on a substrate, and to control quality of a thin film, wherein the apparatus includes a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the bottom of the process chamber; a chamber lid confronting the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributor for locally distributing activated source gas on the substrate, wherein the gas distributor locally confronting the substrate supporter is provided in the chamber lid, wherein the gas distributor forms plasma by the use of plasma formation gas, and activates the source gas by distributing the source gas to some of plasma area for formation of the plasma.Type: GrantFiled: December 26, 2018Date of Patent: June 8, 2021Inventors: Chui Joo Hwang, Jeung Hoon Han, Young Hoon Kim, Seung Hoon Seo
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Patent number: 10504701Abstract: Disclosed is an apparatus and method of processing substrate, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the process chamber, and is rotated at a predetermined direction; a chamber lid confronting with the substrate supporter, the chamber lid for covering the process chamber; and a gas distributor having a plurality of gas distribution modules for distributing gas to the substrate, wherein the plurality of gas distribution modules are connected to the chamber lid, wherein each of the gas distribution modules includes a power source electrode and a ground electrode confronting each other, a plasma discharge space is formed between the power source electrode and the ground electrode, and the plasma discharge space is not overlapped with a thin film formation region of the substrate supported by the substrate supporter.Type: GrantFiled: July 31, 2017Date of Patent: December 10, 2019Assignee: JUSUNG ENGINEERING CO., LTD.Inventors: Jeung Hoon Han, Chul Joo Hwang, Seung Hoon Seo, Sang Don Lee
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Publication number: 20190136379Abstract: Disclosed is an apparatus and method of processing substrate, which facilitates to improve deposition uniformity of a thin film deposited on a substrate, and to control quality of a thin film, wherein the apparatus includes a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the bottom of the process chamber; a chamber lid confronting the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributor for locally distributing activated source gas on the substrate, wherein the gas distributor locally confronting the substrate supporter is provided in the chamber lid, wherein the gas distributor forms plasma by the use of plasma formation gas, and activates the source gas by distributing the source gas to some of plasma area for formation of the plasma.Type: ApplicationFiled: December 26, 2018Publication date: May 9, 2019Inventors: Chul Joo Hwang, Jeung Hoon Han, Young Hoon Kim, Seung Hoon Seo
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Patent number: 10202690Abstract: Disclosed is an apparatus and method of processing substrate, which facilitates to improve deposition uniformity of a thin film deposited on a substrate, and to control quality of a thin film, wherein the apparatus includes a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the bottom of the process chamber; a chamber lid confronting the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributor for locally distributing activated source gas on the substrate, wherein the gas distributor locally confronting the substrate supporter is provided in the chamber lid, wherein the gas distributor forms plasma by the use of plasma formation gas, and activates the source gas by distributing the source gas to some of plasma area for formation of the plasma.Type: GrantFiled: May 28, 2013Date of Patent: February 12, 2019Assignee: JUSUNG ENGINEERING CO., LTD.Inventors: Chul Joo Hwang, Jeung Hoon Han, Young Hoon Kim, Seung Hoon Seo
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Publication number: 20180350653Abstract: Provided is a substrate supporting device which prevents intrusion of a process gas into a rear surface of a substrate in a high-temperature process. The substrate supporting device includes a support portion configured to have a line contact with an edge exclusion zone of the substrate that is deformed at a specific temperature.Type: ApplicationFiled: May 21, 2018Publication date: December 6, 2018Inventors: Sang Jin Jeong, Jeung Hoon Han, Young Seok Choi, Ju Hyuk Park
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Patent number: 9960073Abstract: Disclosed is a substrate processing apparatus and method which facilitate to improve uniformity of thin film material and also facilitate to control quality of thin film by the use of plasma forming space and source gas distributing space separately provided from each other, wherein the substrate processing apparatus includes a process chamber; a substrate support for supporting a plurality of substrates, the substrate support rotatably provided inside the process chamber; and an electrode unit arranged above the substrate support and provided with the plasma forming space and the source gas distributing space, wherein the plasma forming space is spatially separated from the source gas distributing space.Type: GrantFiled: June 13, 2016Date of Patent: May 1, 2018Assignee: Jusung Engineering Co., Ltd.Inventors: Song Whe Huh, Jeung Hoon Han
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Publication number: 20170330733Abstract: Disclosed is an apparatus and method of processing substrate, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the process chamber, and is rotated at a predetermined direction; a chamber lid confronting with the substrate supporter, the chamber lid for covering the process chamber; and a gas distributor having a plurality of gas distribution modules for distributing gas to the substrate, wherein the plurality of gas distribution modules are connected to the chamber lid, wherein each of the gas distribution modules includes a power source electrode and a ground electrode confronting each other, a plasma discharge space is formed between the power source electrode and the ground electrode, and the plasma discharge space is not overlapped with a thin film formation region of the substrate supported by the substrate supporter.Type: ApplicationFiled: July 31, 2017Publication date: November 16, 2017Inventors: Jeung Hoon HAN, Chul Joo HWANG, Seung Hoon SEO, Sang Don LEE
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Patent number: 9748077Abstract: Disclosed is an apparatus and method of processing substrate, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the process chamber, and is rotated at a predetermined direction; a chamber lid confronting with the substrate supporter, the chamber lid for covering the process chamber; and a gas distributor having a plurality of gas distribution modules for distributing gas to the substrate, wherein the plurality of gas distribution modules are connected to the chamber lid, wherein each of the gas distribution modules includes a power source electrode and a ground electrode confronting each other, a plasma discharge space is formed between the power source electrode and the ground electrode, and the plasma discharge space is not overlapped with a thin film formation region of the substrate supported by the substrate supporter.Type: GrantFiled: May 28, 2013Date of Patent: August 29, 2017Assignee: JUSUNG ENGINEERING CO., LTD.Inventors: Jeung Hoon Han, Chul Joo Hwang, Seung Hoon Seo, Sang Don Lee
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Publication number: 20160293387Abstract: Disclosed is a substrate processing apparatus and method which facilitate to improve uniformity of thin film material and also facilitate to control quality of thin film by the use of plasma forming space and source gas distributing space separately provided from each other, wherein the substrate processing apparatus includes a process chamber; a substrate support for supporting a plurality of substrates, the substrate support rotatably provided inside the process chamber; and an electrode unit arranged above the substrate support and provided with the plasma forming space and the source gas distributing space, wherein the plasma forming space is spatially separated from the source gas distributing space.Type: ApplicationFiled: June 13, 2016Publication date: October 6, 2016Applicant: Jusung Engineering Co., Ltd.Inventors: Song Whe HUH, Jeung Hoon HAN
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Patent number: 9387510Abstract: Disclosed is a substrate processing apparatus and method which facilitate to improve uniformity of thin film material and also facilitate to control quality of thin film by the use of plasma forming space and source gas distributing space separately provided from each other, wherein the substrate processing apparatus includes a process chamber; a substrate support for supporting a plurality of substrates, the substrate support rotatably provided inside the process chamber; and a electrode unit arranged above the substrate support and provided with the plasma forming space and the source gas distributing space, wherein the plasma forming space is spatially separated from the source gas distributing space.Type: GrantFiled: December 21, 2012Date of Patent: July 12, 2016Assignee: Jusung Engineering Co., LtdInventors: Song Whe Huh, Jeung Hoon Han
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Publication number: 20150235812Abstract: Disclosed is an apparatus and method of processing substrate, wherein the apparatus comprises a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the process chamber, and is rotated at a predetermined direction; a chamber lid confronting with the substrate supporter, the chamber lid for covering the process chamber; and a gas distributor having a plurality of gas distribution modules for distributing gas to the substrate, wherein the plurality of gas distribution modules are connected to the chamber lid, wherein each of the gas distribution modules includes a power source electrode and a ground electrode confronting each other, a plasma discharge space is formed between the power source electrode and the ground electrode, and the plasma discharge space is not overlapped with a thin film formation region of the substrate supported by the substrate supporter.Type: ApplicationFiled: May 28, 2013Publication date: August 20, 2015Applicant: JUSUNG ENGINEERING CO., LTD.Inventors: Jeung Hoon Han, Chul Joo Hwang, Seung Hoon Seo, Sang Don Lee
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Publication number: 20150225848Abstract: Disclosed is an apparatus and method for processing substrate, which is capable of realizing uniformity of a thin film deposited on a substrate, and facilitating quality control for the thin film, wherein the apparatus includes a process chamber, a chamber lid, a substrate supporter for supporting at least one of substrates, a source gas distributor for distributing source gas to a source gas distribution area, a reactant gas distributor for distributing reactant gas to a reactant gas distribution area, a purge gas distributor for distributing purge gas to a purge gas distribution area defined between the source gas distribution area and the reactant gas distribution area, wherein a distance between the purge gas distributor and the substrate is relatively smaller than a distance between the substrate and each of the source gas distributor and reactant gas distributor.Type: ApplicationFiled: August 23, 2013Publication date: August 13, 2015Inventors: Jeung Hoon Han, Young Hoon Kim, Chul Joo Hwang
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Publication number: 20150111391Abstract: Disclosed is an apparatus and method of processing substrate, which facilitates to improve deposition uniformity of a thin film deposited on a substrate, and to control quality of a thin film, wherein the apparatus includes a process chamber; a substrate supporter for supporting at least one of substrates, wherein the substrate supporter is provided in the bottom of the process chamber; a chamber lid confronting the substrate supporter, the chamber lid for covering an upper side of the process chamber; and a gas distributor for locally distributing activated source gas on the substrate, wherein the gas distributor locally confronting the substrate supporter is provided in the chamber lid, wherein the gas distributor forms plasma by the use of plasma formation gas, and activates the source gas by distributing the source gas to some of plasma area for formation of the plasma.Type: ApplicationFiled: May 28, 2013Publication date: April 23, 2015Inventors: Chul Joo Hwang, Jeung Hoon Han, Young Hoon Kim, Seung Hoon Seo
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Publication number: 20140363587Abstract: Disclosed is a substrate processing apparatus and method which facilitate to improve uniformity of thin film material and also facilitate to control quality of thin film by the use of plasma forming space and source gas distributing space separately provided from each other, wherein the substrate processing apparatus includes a process chamber; a substrate support for supporting a plurality of substrates, the substrate support rotatably provided inside the process chamber; and a electrode unit arranged above the substrate support and provided with the plasma forming space and the source gas distributing space, wherein the plasma forming space is spatially separated from the source gas distributing space.Type: ApplicationFiled: December 21, 2012Publication date: December 11, 2014Applicant: JUSUNG ENGINEERING CO., LTD.Inventors: Song Whe Huh, Jeung Hoon Han
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Patent number: D830981Type: GrantFiled: May 16, 2017Date of Patent: October 16, 2018Assignee: ASM IP Holding B.V.Inventors: Sang Jin Jeong, Jeung Hoon Han, Young Seok Choi, Ju Hyuk Park