Patents by Inventor Jeung S. Lee

Jeung S. Lee has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making a semiconductor device having floating source and drain regions
    Patent number: 5593928
    Abstract: The present invention relates to a MOS transistor having floating source regions and floating drain regions.An epitaxial layer is grown on the channel regions of a semiconductor substrate in such a manner that the surface of the epitaxial layer makes a plane together with the upper surface of field oxide films, thereby enabling steps to be reduced.A polysilicon film is filled in recess regions formed by the growth of epitaxial layer and impurity-ions are implanted into the polysilicon film to form floating source regions and a floating drain regions.A buried oxide film is formed such a manner that it encloses the polysilicon film filled in the recess regions to prevent the junction leakage and to improve the characteristic of insulation.
    Type: Grant
    Filed: November 30, 1993
    Date of Patent: January 14, 1997
    Assignee: LG Semicon Co., Ltd.
    Inventor: Jeung S. Lee