Abstract: An axial motor for a traction machine and an apparatus for fabricating a stator core thereof is fabricated by rolling a thin plate having open slots such that turns of the thin plate are stacked on each other. The outer circumferential surface of the thin plate is pressed using a pressing roller while the thin plate is being rolled. The thin plate is not deformed by tension, the open slots aligned in positions are accurately maintained, and the thin plate is prevented from being loose, thereby significantly lowering a defect ratio in fabrication, lowering fabrication costs, and fabricating a high-quality product.

Abstract: A partially sulfonated polybenzimidazole based polymer for fuel cell membrane is prepared by copolymerizing monomers of 3,3?-diaminobenzidine, isophthalic acid and 5-sulfoisophthalic acid to obtain a partially sulfonated polybenzimidazole, and doping the partially sulfonated polybenzimidazole with inorganic acid.

Abstract: Disclosed is a membrane-electrode assembly (MEA) that prevents an electrolyte membrane from being damaged upon the fabrication of a single cell or a stack of fuel cells. The MEA further includes a guard gasket interposed between conventional gaskets, wherein the guard gasket has a thickness corresponding to 70%-95% of the thickness of the electrolyte membrane. The MEA ensures mechanical protection of the electrolyte membrane, and thus prevents the electrolyte membrane from being damaged by an excessive binding pressure upon the fabrication of a single cell or a stack of fuel cells. Furthermore, the contact resistance between the electrolyte membrane and the catalyst layer and the contact resistance between the gas diffusion layer and the catalyst layer can be minimized, thereby improving the quality of a fuel cell.

Abstract: A membrane-electrode binder for a fuel cell, a method of manufacturing the binder, and a fuel cell comprising the binder are provided, in which the membrane-electrode binder comprises a dual electrode constituted by a first electrode and a second electrode in a two-layer form, and a polymer electrolyte membrane disposed on the dual electrode, the dual electrode comprising an electrode substrate and a catalyst layer formed thereon. In detail, the membrane-electrode binder comprises the dual electrode that is constituted by the first electrode obtained by using a PBI-based binder, the second electrode obtained by using a PTFE-based binder, and an inorganic acid doped PBI-based polymer electrolyte membrane disposed on the dual electrode and coming in contact with the first electrode.

Abstract: A photomask has highly reliable assist patterns, and a method of fabricating the same is provided. The photomask includes a transparent substrate, circuit pattern and assist patterns. The circuit pattern recessed into the transparent substrate relative to a surface thereof has a first thickness, and assist patterns located adjacent to, and spaced apart from, the circuit pattern are recessed into the transparent substrate relative to the surface thereof while having a second thickness less than the first thickness.

Abstract: Disclosed is a membrane-electrode assembly (MEA) that prevents an electrolyte membrane from being damaged upon the fabrication of a single cell or a stack of fuel cells. The MEA further includes a guard gasket interposed between conventional gaskets, wherein the guard gasket has a thickness corresponding to 70%-95% of the thickness of the electrolyte membrane. The MEA ensures mechanical protection of the electrolyte membrane, and thus prevents the electrolyte membrane from being damaged by an excessive binding pressure upon the fabrication of a single cell or a stack of fuel cells. Furthermore, the contact resistance between the electrolyte membrane and the catalyst layer and the contact resistance between the gas diffusion layer and the catalyst layer can be minimized, thereby improving the quality of a fuel cell.

Abstract: A partially sulfonated polybenzimidazole based polymer for fuel cell membrane is prepared by copolymerizing monomers of 3,3?-diaminobenzidine, isophthalic acid and 5-sulfoisophthalic acid to obtain a partially sulfonated polybenzimidazole, and doping the partially sulfonated polybenzimidazole with inorganic acid.

Abstract: A photomask has highly reliable assist patterns, and a method of fabricating the same is provided. The photomask includes a transparent substrate, circuit pattern and assist patterns. The circuit pattern recessed into the transparent substrate relative to a surface thereof has a first thickness, and assist patterns located adjacent to, and spaced apart from, the circuit pattern are recessed into the transparent substrate relative to the surface thereof while having a second thickness less than the first thickness.

Abstract: A photoresist composition may include formulas 1 and 2: ?where R is an acetal group or a ter-butyloxy carbonyl (t-BOC) group, n and m are integers, n/(m+n) is 0.01?0.8, and m/(m+n) is 1?[n/(m+n)], ?where r is an integer between 8-40. A method for forming photoresist patterns may include forming a photoresist layer on a semiconductor substrate and exposing and developing the photoresist layer using a mask pattern that includes first areas having a light transmissivity of about 100% and second areas having a light transmissivity of between about 10% and about 30%.

Abstract: A photoresist pattern is formed, without being exposed, by using photoresist having a residual layer proportion characteristic by which the photoresist dissolves at a suitable rate in a developing solution. First, a target layer to be patterned and a photoresist layer are sequentially formed on a substrate having a pattern that defines a step on the substrate. Some of the photoresist layer is treated with the developing solution, to thereby form a photoresist pattern whose upper surface is situated beneath the step and hence, exposes part of the target layer. Next, the exposed part of the target layer, and the photoresist pattern are removed. A silicidation process may be carried out thereafter on the area(s) from which the target layer has been removed. The method is relatively simple because it does not involve an exposure process. Furthermore, the method can be used to manufacture devices having very fine linewidths, i.e.

Abstract: A method of forming fine patterns in a semiconductor device through a double photo lithography process. A layer to be etched and a hard mask layer are sequentially formed on a semiconductor substrate. A first photo resist pattern is formed on the hard mask layer. A first hard mask layer pattern is formed by etching the hard mask layer using the first photo resist pattern. After the first photo resist pattern is removed, a second photo resist pattern is formed on the resultant structure. A second hard mask layer pattern is formed by etching the first hard mask layer pattern using the second photo resist pattern. The layer to be etched is then etched using the second hard mask layer pattern after the second photo resist pattern has been removed, resulting in patterns have line edges without rounding.

Abstract: A photoresist composition may include formulas 1 and 2: 1

Abstract: A photoresist pattern is formed, without being exposed, by using photoresist having a residual layer proportion characteristic by which the photoresist dissolves at a suitable rate in a developing solution. First, a target layer to be patterned and a photoresist layer are sequentially formed on a substrate having a pattern that defines a step on the substrate. Some of the photoresist layer is treated with the developing solution, to thereby form a photoresist pattern whose upper surface is situated beneath the step and hence, exposes part of the target layer. Next, the exposed part of the target layer, and the photoresist pattern are removed. A silicidation process may be carried out thereafter on the area(s) from which the target layer has been removed. The method is relatively simple because it does not involve an exposure process. Furthermore, the method can be used to manufacture devices having very fine linewidths, i.e.

Abstract: A method of forming fine patterns in a semiconductor device through a double photo lithography process. A layer to be etched and a hard mask layer are sequentially formed on a semiconductor substrate. A first photo resist pattern is formed on the hard mask layer. A first hard mask layer pattern is formed by etching the hard mask layer using the first photo resist pattern. After the first photo resist pattern is removed, a second photo resist pattern is formed on the resultant structure. A second hard mask layer pattern is formed by etching the first hard mask layer pattern using the second photo resist pattern. The layer to be etched is then etched using the second hard mask layer pattern after the second photo resist pattern has been removed, resulting in patterns have line edges without rounding.