Patents by Inventor Jeyong JEON
Jeyong JEON has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11984509Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.Type: GrantFiled: March 4, 2023Date of Patent: May 14, 2024Assignee: LG DISPLAY CO., LTD.Inventors: SeHee Park, JungSeok Seo, PilSang Yun, Jeyong Jeon, Jaeyoon Park, ChanYong Jeong
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Patent number: 11705460Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.Type: GrantFiled: February 14, 2022Date of Patent: July 18, 2023Assignee: LG Display Co., Ltd.Inventors: Kwanghwan Ji, HongRak Choi, Jeyong Jeon, Jaeyoon Park
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Publication number: 20230207702Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.Type: ApplicationFiled: March 4, 2023Publication date: June 29, 2023Applicant: LG Display Co., Ltd.Inventors: SeHee PARK, JungSeok SEO, PilSang YUN, Jeyong JEON, Jaeyoon PARK, ChanYong JEONG
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Patent number: 11676970Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.Type: GrantFiled: February 14, 2022Date of Patent: June 13, 2023Assignee: LG Display Co., Ltd.Inventors: Kwanghwan Ji, HongRak Choi, Jeyong Jeon, Jaeyoon Park
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Patent number: 11621356Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.Type: GrantFiled: August 19, 2021Date of Patent: April 4, 2023Assignee: LG Display Co., Ltd.Inventors: SeHee Park, JungSeok Seo, PilSang Yun, Jeyong Jeon, Jaeyoon Park, ChanYong Jeong
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Patent number: 11588027Abstract: A thin film transistor, a display panel comprising the same and a display apparatus are discussed. The thin film transistor comprises a buffer layer embodied on a substrate, a semiconductor layer embodied on the buffer layer, including a channel area, a first conductor portion and a second conductor portion, a gate insulating film embodied on the semiconductor layer, a gate electrode embodied on the gate insulating film, and an auxiliary electrode overlapped with the second conductor portion, wherein the first conductor portion is extended from one side of the channel area, and becomes a source area, and the second conductor portion is extended from the other side of the channel area, and becomes a drain area.Type: GrantFiled: December 22, 2020Date of Patent: February 21, 2023Assignee: LG DISPLAY CO., LTD.Inventors: InTak Cho, Jiyong Noh, Jaeman Jang, PilSang Yun, Jeyong Jeon
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Publication number: 20220173130Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.Type: ApplicationFiled: February 14, 2022Publication date: June 2, 2022Applicant: LG Display Co., Ltd.Inventors: Kwanghwan JI, HongRak CHOI, Jeyong JEON, Jaeyoon PARK
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Patent number: 11276710Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.Type: GrantFiled: October 21, 2019Date of Patent: March 15, 2022Assignee: LG Display Co., Ltd.Inventors: Kwanghwan Ji, HongRak Choi, Jeyong Jeon, Jaeyoon Park
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Publication number: 20210384357Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.Type: ApplicationFiled: August 19, 2021Publication date: December 9, 2021Applicant: LG Display Co., Ltd.Inventors: SeHee PARK, JungSeok SEO, PilSang YUN, Jeyong JEON, Jaeyoon PARK, ChanYong JEONG
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Patent number: 11171246Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.Type: GrantFiled: December 6, 2019Date of Patent: November 9, 2021Assignee: LG Display Co., Ltd.Inventors: SeHee Park, JungSeok Seo, PilSang Yun, Jeyong Jeon, Jaeyoon Park, ChanYong Jeong
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Patent number: 11121260Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.Type: GrantFiled: December 6, 2019Date of Patent: September 14, 2021Assignee: LG Display Co., Ltd.Inventors: SeHee Park, JungSeok Seo, PilSang Yun, Jeyong Jeon, Jaeyoon Park, ChanYong Jeong
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Patent number: 11107870Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate and a display using the same. A disclosed display device may include a substrate, a first thin film transistor including a first semiconductor layer having a polycrystalline semiconductor material on the substrate, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor material on the substrate. Both the first semiconductor layer and the second semiconductor layer may be disposed directly on a same underlying layer.Type: GrantFiled: December 14, 2018Date of Patent: August 31, 2021Assignee: LG Display Co., LtdInventors: Saeroonter Oh, Jungsun Beak, Seungmin Lee, Juheyuck Baeck, Hyunsoo Shin, Jeyong Jeon, Dohyung Lee
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Publication number: 20210193804Abstract: A thin film transistor, a display panel comprising the same and a display apparatus are discussed. The thin film transistor comprises a buffer layer embodied on a substrate, a semiconductor layer embodied on the buffer layer, including a channel area, a first conductor portion and a second conductor portion, a gate insulating film embodied on the semiconductor layer, a gate electrode embodied on the gate insulating film, and an auxiliary electrode overlapped with the second conductor portion, wherein the first conductor portion is extended from one side of the channel area, and becomes a source area, and the second conductor portion is extended from the other side of the channel area, and becomes a drain area.Type: ApplicationFiled: December 22, 2020Publication date: June 24, 2021Applicant: LG Display Co., Ltd.Inventors: InTak CHO, Jiyong NOH, Jaeman JANG, PilSang YUN, Jeyong JEON
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Patent number: 10943546Abstract: An electronic device includes a panel including first and second transistors and a driver circuit driving the panel. The first transistor includes a first electrode disposed on a substrate, a first insulating film disposed on the substrate and having an open area, a second electrode disposed on the first insulating film and overlapping the first electrode, and a first active layer disposed on the first and second electrodes. The second transistor includes third and fourth electrodes which are disposed to space apart from, and on a same layer as, the second electrode, and between which the open area is disposed, and a second active layer disposed on the third and fourth electrodes and across the open area.Type: GrantFiled: November 25, 2019Date of Patent: March 9, 2021Assignee: LG DISPLAY CO., LTD.Inventors: InTak Cho, PilSang Yun, Jeyong Jeon, Jiyong Noh, SeHee Park
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Publication number: 20200203534Abstract: A thin-film transistor, a display device including a thin-film transistor, and a method of manufacturing a thin-film transistor are provided. A thin-film transistor includes: a base substrate, a semiconductor layer on the base substrate, the semiconductor layer including: a first oxide semiconductor layer, and a second oxide semiconductor layer on the first oxide semiconductor layer, the second oxide semiconductor layer having a Hall mobility smaller than a Hall mobility of the first oxide semiconductor layer, and a gate electrode spaced apart from the semiconductor layer and partially overlapping the semiconductor layer, wherein a concentration of gallium (Ga) in the second oxide semiconductor layer is higher than a concentration of gallium (Ga) in the first oxide semiconductor layer.Type: ApplicationFiled: December 6, 2019Publication date: June 25, 2020Applicant: LG Display Co., Ltd.Inventors: SeHee PARK, JungSeok SEO, PilSang YUN, Jeyong JEON, Jaeyoon PARK, ChanYong JEONG
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Publication number: 20200184903Abstract: An electronic device can include: a panel; a driver circuit configured to drive the panel; and first and second transistors disposed in the panel, the first and second transistors including: a first electrode of the first transistor, the first electrode being disposed on a substrate; a first insulating film disposed on the substrate, overlapping an edge of the first electrode and having an open area for receiving portions of the second transistor; a second electrode of the first transistor, the second electrode being disposed on the first insulating film and overlapping with a portion of the first electrode; third and fourth electrodes of the second transistor, the third electrode and the fourth electrode being disposed on a same layer as the second electrode and spaced apart from the second electrode, the open area of the first insulating film being disposed between the third electrode and the fourth electrode; a first active layer of the first transistor, the first active layer being disposed on the first eType: ApplicationFiled: November 25, 2019Publication date: June 11, 2020Applicant: LG DISPLAY CO., LTD.Inventors: InTak CHO, PilSang YUN, Jeyong JEON, Jiyong NOH, SeHee PARK
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Publication number: 20200144304Abstract: A panel comprises a substrate; a transistor disposed on the substrate and including: a source electrode, a drain electrode, a gate electrode, a gate insulation layer, an active layer, an auxiliary source electrode configured to electrically connect one end of the active layer to the source electrode, and an auxiliary drain electrode configured to electrically connect an other end of the active layer to the drain electrode; and a capacitor disposed on the substrate and including a first plate and a second plate. The first plate of the capacitor is made of a same material as the auxiliary source electrode and the auxiliary drain electrode.Type: ApplicationFiled: October 21, 2019Publication date: May 7, 2020Applicant: LG Display Co., Ltd.Inventors: Kwanghwan JI, HongRak CHOI, Jeyong JEON, Jaeyoon PARK
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Publication number: 20190123120Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate and a display using the same. A disclosed display device may include a substrate, a first thin film transistor including a first semiconductor layer having a polycrystalline semiconductor material on the substrate, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor material on the substrate. Both the first semiconductor layer and the second semiconductor layer may be disposed directly on a same underlying layer.Type: ApplicationFiled: December 14, 2018Publication date: April 25, 2019Applicant: LG DISPLAY CO., LTD.Inventors: Saeroonter OH, Jungsun BEAK, Seungmin LEE, Juheyuck BAECK, Hyunsoo SHIN, Jeyong JEON, Dohyung LEE
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Patent number: 10181502Abstract: The present disclosure relates to a thin film transistor substrate having two different types of thin film transistors on the same substrate and a display using the same. A disclosed display device may include a substrate, a first thin film transistor including a first semiconductor layer having a polycrystalline semiconductor material on the substrate, and a second thin film transistor including a second semiconductor layer including an oxide semiconductor material on the substrate. Both the first semiconductor layer and the second semiconductor layer may be disposed directly on a same underlying layer.Type: GrantFiled: August 28, 2015Date of Patent: January 15, 2019Assignee: LG Display Co., Ltd.Inventors: Saeroonter Oh, Jungsun Beak, Seungmin Lee, Juheyuck Baeck, Hyunsoo Shin, Jeyong Jeon, Dohyung Lee
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Patent number: 10083990Abstract: A thin film transistor (TFT) substrate and a display device using the same are disclosed. The TFT substrate includes a base substrate, a first TFT having a polycrystalline semiconductor and disposed on the base substrate, and a second TFT having an oxide semiconductor and disposed on the first TFT. The second TFT overlaps at least a portion of the first TFT in a plan view.Type: GrantFiled: August 28, 2015Date of Patent: September 25, 2018Assignee: LG Display Co., Ltd.Inventors: Saeroonter Oh, Kwanghwan Ji, Hyunsoo Shin, Jeyong Jeon, Dohyung Lee