Patents by Inventor Jhao-Cheng CHEN

Jhao-Cheng CHEN has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20230027674
    Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.
    Type: Application
    Filed: September 30, 2022
    Publication date: January 26, 2023
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Jhao-Cheng CHEN, Huang-Hsien CHANG, Wen-Long LU, Shao Hsuan CHUANG, Ching-Ju CHEN, Tse-Chuan CHOU
  • Patent number: 11495557
    Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.
    Type: Grant
    Filed: March 20, 2020
    Date of Patent: November 8, 2022
    Assignee: ADVANCED SEMICONDUCTOR ENGINEERING, INC.
    Inventors: Jhao-Cheng Chen, Huang-Hsien Chang, Wen-Long Lu, Shao Hsuan Chuang, Ching-Ju Chen, Tse-Chuan Chou
  • Publication number: 20210296267
    Abstract: A semiconductor device and method for manufacturing the same are provided. The method includes providing a first substrate. The method also includes forming a first metal layer on the first substrate. The first metal layer includes a first metal material. The method further includes treating a first surface of the first metal layer with a solution including an ion of a second metal material. In addition, the method includes forming a plurality of metal particles including the second metal material on a portion of the first surface of the first metal layer.
    Type: Application
    Filed: March 20, 2020
    Publication date: September 23, 2021
    Applicant: Advanced Semiconductor Engineering, Inc.
    Inventors: Jhao-Cheng CHEN, Huang-Hsien CHANG, Wen-Long LU, Shao Hsuan CHUANG, Ching-Ju CHEN, Tse-Chuan CHOU