Patents by Inventor JHAO-PING JIANG

JHAO-PING JIANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 11588020
    Abstract: A semiconductor device includes a semiconductor substrate, a pair of source/drain regions on the semiconductor substrate, and a gate structure on the semiconductor substrate and between the pair of source/drain regions. The gate structure includes a first metal layer and a second metal layer in contact with the first metal layer. A sidewall of the first metal layer and a top surface of the semiconductor substrate form a first included angle, a sidewall of the second metal layer and the top surface of the semiconductor substrate form a second included angle. The second included angle is different from the first included angle.
    Type: Grant
    Filed: June 21, 2021
    Date of Patent: February 21, 2023
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: I-Hsiu Wang, Yean-Zhaw Chen, Ying-Ting Hsia, Jhao-Ping Jiang, Chun-Chih Cheng
  • Publication number: 20210313425
    Abstract: A semiconductor device includes a semiconductor substrate, a pair of source/drain regions on the semiconductor substrate, and a gate structure on the semiconductor substrate and between the pair of source/drain regions. The gate structure includes a first metal layer and a second metal layer in contact with the first metal layer. A sidewall of the first metal layer and a top surface of the semiconductor substrate form a first included angle, a sidewall of the second metal layer and the top surface of the semiconductor substrate form a second included angle. The second included angle is different from the first included angle.
    Type: Application
    Filed: June 21, 2021
    Publication date: October 7, 2021
    Inventors: I-HSIU WANG, YEAN-ZHAW CHEN, YING-TING HSIA, JHAO-PING JIANG, CHUN-CHIH CHENG
  • Patent number: 11043559
    Abstract: A method for manufacturing a semiconductor device includes following operations. A semiconductor substrate is received. A first semiconductive layer is formed over the semiconductor substrate. A plurality of dopants is formed in a first portion of the first semiconductive layer. A second portion of the first semiconductive layer is removed to form a patterned first semiconductive layer. A first sidewall profile of the first portion after the removing of the second portion of the first semiconductive layer is controlled by adjusting a distribution of the plurality of dopants in the first portion. An underneath layer is patterned to form a hole in the underneath layer using the patterned first semiconductive layer as a mask to pattern. A sidewall profile of the hole in the underneath layer is controlled by the first sidewall profile of the first portion of the first semiconductive layer.
    Type: Grant
    Filed: December 17, 2019
    Date of Patent: June 22, 2021
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: I-Hsiu Wang, Yean-Zhaw Chen, Ying-Ting Hsia, Jhao-Ping Jiang, Chun-Chih Cheng
  • Publication number: 20200127093
    Abstract: A method for manufacturing a semiconductor device includes following operations. A semiconductor substrate is received. A first semiconductive layer is formed over the semiconductor substrate. A plurality of dopants is formed in a first portion of the first semiconductive layer. A second portion of the first semiconductive layer is removed to form a patterned first semiconductive layer. A first sidewall profile of the first portion after the removing of the second portion of the first semiconductive layer is controlled by adjusting a distribution of the plurality of dopants in the first portion. An underneath layer is patterned to form a hole in the underneath layer using the patterned first semiconductive layer as a mask to pattern. A sidewall profile of the hole in the underneath layer is controlled by the first sidewall profile of the first portion of the first semiconductive layer.
    Type: Application
    Filed: December 17, 2019
    Publication date: April 23, 2020
    Inventors: I-HSIU WANG, YEAN-ZHAW CHEN, YING-TING HSIA, JHAO-PING JIANG, CHUN-CHIH CHENG
  • Patent number: 10510839
    Abstract: A method for manufacturing a semiconductor device includes following operations. A semiconductor substrate is received. A first semiconductive layer over the semiconductor substrate is formed. A plurality of dopants are formed in a first portion of the first semiconductive layer. A second portion of the first semiconductive layer is removed to form a patterned first semiconductive layer. A first sidewall profile of the first portion after the removing the second portion of the first semiconductive layer is controlled by adjusting a distribution of the plurality of dopants in the first portion.
    Type: Grant
    Filed: July 24, 2018
    Date of Patent: December 17, 2019
    Assignee: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD.
    Inventors: I-Hsiu Wang, Yean-Zhaw Chen, Ying-Ting Hsia, Jhao-Ping Jiang, Chun-Chih Cheng
  • Publication number: 20190165101
    Abstract: A method for manufacturing a semiconductor device includes following operations. A semiconductor substrate is received. A first semiconductive layer over the semiconductor substrate is formed. A plurality of dopants are formed in a first portion of the first semiconductive layer. A second portion of the first semiconductive layer is removed to form a patterned first semiconductive layer. A first sidewall profile of the first portion after the removing the second portion of the first semiconductive layer is controlled by adjusting a distribution of the plurality of dopants in the first portion.
    Type: Application
    Filed: July 24, 2018
    Publication date: May 30, 2019
    Inventors: I-HSIU WANG, YEAN-ZHAW CHEN, YING-TING HSIA, JHAO-PING JIANG, CHUN-CHIH CHENG