Abstract: A circuit board has a substrate, a plurality of data lines, a plurality of scan lines, and a plurality of unit circuits. The plurality of data lines, the plurality of scan lines, and the plurality of unit circuits are disposed on the substrate. The plurality of unit circuits are defined by intersection of the plurality of data lines and the plurality of scan lines. One of the plurality of unit circuits includes a transistor and a memristor arranged on the substrate. The memristor overlaps with a portion of the transistor.

Abstract: An electronic device is provided. The electronic device includes a substrate, a first insulating layer, an oxide semiconductor layer, a second insulating layer, and a gate electrode. The first insulating layer is disposed on the substrate. The oxide semiconductor layer is disposed on the first insulating layer and has a first part and a second part adjacent to the first part. The second insulating layer is disposed on the oxide semiconductor layer. The gate electrode is disposed on the substrate and overlapped with the first part of the oxide semiconductor layer. Wherein a concentration of H? at a first interface between the second insulating layer and the first part is greater than a concentration of H? at a center portion of the first part in a spectrum measured by TOF-SIMS.

Abstract: A substrate module includes a first substrate and a semiconductor unit. The semiconductor unit is disposed on the first substrate. The semiconductor unit includes an active layer and a first electrode. The active layer has a surface. The first electrode is at least partially overlapped with the active layer and contacts the surface. The active layer has a first range and a second range, and the first range is closer to the surface than the second range. A first zinc concentration is higher than a first gallium concentration in the first range.

Abstract: An electronic device is provided. The electronic device includes a substrate, a buffer layer, an oxide semiconductor layer, a first insulating layer, and a gate electrode. The buffer layer is disposed on the substrate. The oxide semiconductor layer is disposed on the buffer layer and has a first part and a second part adjacent to the first part. The first insulating layer is disposed on the oxide semiconductor layer. The gate electrode is disposed on the first insulating layer and overlapped with the first part of the oxide semiconductor layer. Moreover, an intensity of SiN— at an interface between the first part and the first insulating layer is greater than an intensity of SiN— at an interface between the first part and the buffer layer in a spectrum measured by TOF-SIMS. A method of manufacturing an electronic device is also provided.

Abstract: An electronic device includes a substrate and a transistor. The transistor is disposed on the substrate and includes an oxide semiconductor, a first conductive element and a second conductive element. The oxide semiconductor is disposed on the substrate. The first conductive element is disposed between the substrate and the oxide semiconductor. The second conductive element is disposed on the oxide semiconductor and overlapped with the first conductive element. In a top view of the transistor, the second conductive element has an arc angle.

Abstract: An electronic device and a manufacturing method thereof are provided. The electronic device includes a substrate, a buffer layer, an oxide semiconductor layer, and a gate electrode. The buffer layer is disposed on the substrate. The oxide semiconductor layer is disposed on the buffer layer and has a first part and a second part adjacent to the first part. The gate electrode is overlapped with the first part. A part of the buffer layer is overlapped with the second part of the oxide semiconductor layer, The part of the buffer layer has a first portion and a second portion disposed on the first portion. The concentration of boron in the first portion is greater than the concentration of boron in the second portion.

Abstract: A substrate module includes a first substrate and a transistor unit. The transistor unit is disposed on the first substrate, and the transistor unit includes an active layer, a first electrode, and a second electrode. The active layer has a first surface and a second surface, and the first surface is opposite to the second surface. The first electrode and the second electrode at least partially overlap the active layer. The second surface contacts the first electrode and the second electrode. The active layer has a first range and a second range, and the first range is closer to the second surface than the second range. A first gallium concentration and a first zinc concentration exist within the first range in the active layer, and the first zinc concentration is higher than the first gallium concentration.

Abstract: A substrate module includes a first substrate and a transistor unit. The transistor unit is disposed on the first substrate, and the transistor unit includes an active layer, a first electrode, and a second electrode. The active layer has a first surface and a second surface, and the first surface is opposite to the second surface. The first electrode and the second electrode at least partially overlap the active layer. The second surface contacts the first electrode and the second electrode. A first gallium concentration exists within a first range in the active layer, the first range is adjacent to the second surface of the active layer, a second gallium concentration exists within a second range in the active layer, the second range is adjacent to the first surface of the active layer, and the first gallium concentration is higher than the second gallium concentration.

Abstract: A substrate module includes a first substrate and a transistor unit. The transistor unit is disposed on the first substrate, and the transistor unit includes an active layer, a first electrode, and a second electrode. The active layer has a first surface and a second surface, and the first surface is opposite to the second surface. The first electrode and the second electrode at least partially overlap the active layer. The second surface contacts the first electrode and the second electrode. A first gallium concentration exists within a first range in the active layer, the first range is adjacent to the second surface of the active layer, a second gallium concentration exists within a second range in the active layer, the second range is adjacent to the first surface of the active layer, and the first gallium concentration is higher than the second gallium concentration.

Abstract: A work module includes a substrate and a transistor unit disposed on the substrate. The transistor unit includes an active layer, a source electrode, and a drain electrode. The active layer has a thickness, a first surface, and a second surface. The first surface is parallel with the second surface. The source electrode and the drain electrode at least partially overlap the active layer. The second surface contacts the source electrode and the drain electrode. A first zinc concentration exists within a first range from the second surface to a site located away from the second surface by a tenth of the thickness. A second zinc concentration exists within a second range from a site located away from the second surface by nine tenths of the thickness to the first surface. The first zinc concentration is higher than the second zinc concentration.

Abstract: A work module includes a substrate and a transistor unit disposed on the substrate. The transistor unit includes an active layer, a source electrode, and a drain electrode. The active layer has a thickness, a first surface, and a second surface. The first surface is parallel with the second surface. The source electrode and the drain electrode at least partially overlap the active layer. The second surface contacts the source electrode and the drain electrode. A first zinc concentration exists within a first range from the second surface to a site located away from the second surface by a tenth of the thickness. A second zinc concentration exists within a second range from a site located away from the second surface by nine tenths of the thickness to the first surface. The first zinc concentration is higher than the second zinc concentration.