Abstract: A gas-liquid mixing control system includes a liquid supply unit, a liquid pressure regulating valve, a gas supply unit, a gas pressure regulating valve, a mixing tank, an output pipe, and a non-electric control flow regulator. The mixing tank communicates with said regulating valves; liquid and gas are mixed in the mixing tank to form mixed fluid. The first end and second end of output pipe communicate with the mixing tank and the machine respectively, making mixed fluid output from mixing tank to machine through the output pipe. The mixed fluid in first end and second end have third flow and fourth flow respectively. Said flow regulator communicates with the output pipe; the mixed fluid passing through said flow regulator has fifth flow. The first flow is not lower than at least one of the fourth and the fifth flow. Additionally, a control method for gas-liquid mixing is disclosed.

Abstract: The invention provides a solar cell. The solar cell has the following structures: a substrate; a first electrode formed on the substrate; a light absorbing layer formed on the first electrode, wherein the light absorbing layer includes a first compound thin film and a second compound thin film, and a band gap of the second compound thin film is larger than that of the first compound thin film; a buffer layer formed on the light absorbing layer; a transparent conducting layer formed on the buffer layer; and a second electrode formed on the transparent conducting layer.

Abstract: A method for fabricating a copper-indium-gallium-diselenide (CIGS) compound thin film is provided. In this method, a substrate is first provided. An adhesive layer is formed over the substrate. A metal electrode layer is formed over the adhesive layer. A precursor stacked layer is formed over the metal electrode layer, wherein the precursor stacked layer includes a plurality of copper-gallium (CuGa) alloy layers and at least one copper-indium (CuIn) alloy layer sandwiched between the plurality of CuGa alloy layers. An annealing process is performed to convert the precursor stacked layer into a copper-indium-gallium (CuInGa) alloy layer. A selenization process is performed to convert the CuInGa alloy layer into a copper-indium-gallium-diselenide (CuInGaSe) compound thin film.