Patents by Inventor Jhen-Ting Jhang

Jhen-Ting Jhang has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Database batch update method, data redo/undo log producing method and memory storage apparatus
    Patent number: 10169160
    Abstract: A database batch update method is provided. The method includes: receiving a data access command which requires to access data from a first memory; determining whether the data access command is a first type or a second type command; storing the first type command in a second memory, and access the data from a third memory in response to the second type command; sequentially accessing the first memory according to the data access command stored in the second memory in an order of physical addresses of the first memory. The sequential access rate of the first memory is larger than the random access rate of the first memory, wherein the terms “sequential” and “random” are in connection with the physical addresses of the first memory. Furthermore, a data redo/undo log producing method and a memory storage apparatus are also provided.
    Type: Grant
    Filed: December 29, 2015
    Date of Patent: January 1, 2019
    Assignee: Industrial Technology Research Institute
    Inventors: Hung-Hsuan Lin, Tzi-Cker Chiueh, Jhen-Ting Jhang
  • DATABASE BATCH UPDATE METHOD, DATA REDO/UNDO LOG PRODUCING METHOD AND MEMORY STORAGE APPARATUS
    Publication number: 20170177444
    Abstract: A database batch update method is provided. The method includes: receiving a data access command which requires to access data from a first memory; determining whether the data access command is a first type or a second type command; storing the first type command in a second memory, and access the data from a third memory in response to the second type command; sequentially accessing the first memory according to the data access command stored in the second memory in an order of physical addresses of the first memory. The sequential access rate of the first memory is larger than the random access rate of the first memory, wherein the terms “sequential” and “random” are in connection with the physical addresses of the first memory. Furthermore, a data redo/undo log producing method and a memory storage apparatus are also provided.
    Type: Application
    Filed: December 29, 2015
    Publication date: June 22, 2017
    Inventors: Hung-Hsuan Lin, Tzi-Cker Chiueh, Jhen-Ting Jhang