Patents by Inventor Jhen-Yu You

Jhen-Yu You has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10849533
    Abstract: A blood vessel scanning system and method are provided, which are adapted for user identification. The blood vessel scanning system is implemented for a head-mounted image viewing device. The blood vessel scanning method comprises the following steps: determining whether a user is authorized or not according to the blood vessel scanning image of the user; if the user is an authorized user, the blood vessel scanning system adjusts lens degree of the head-mounted image viewing device according to the pre-stored visual information of the user.
    Type: Grant
    Filed: April 16, 2018
    Date of Patent: December 1, 2020
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Chih-Hao Lin, Jhen-Yu You, Yi-Huan Liao, Chun Chang
  • Publication number: 20180317816
    Abstract: A blood vessel scanning system and method are provided, which are adapted for user identification. The blood vessel scanning system is implemented for a head-mounted image viewing device. The blood vessel scanning method comprises the following steps: determining whether a user is authorized or not according to the blood vessel scanning image of the user; if the user is an authorized user, the blood vessel scanning system adjusts lens degree of the head-mounted image viewing device according to the pre-stored visual information of the user.
    Type: Application
    Filed: April 16, 2018
    Publication date: November 8, 2018
    Inventors: Chih-Hao LIN, Jhen-Yu You, Yi-Huan Liao, Chun Chang
  • Patent number: 9690971
    Abstract: A photo-sensing unit including a first electrode, a first insulation layer, a photo-sensing structure and a second electrode is provided. The first insulation layer covers the first electrode and has an opening exposing the first electrode. The photo-sensing structure is located on the first electrode and disposed in the opening of the first insulation layer. The photo-sensing structure includes a first photo-sensing layer and a second photo-sensing layer stacked with each other. A material of the first photo-sensing layer is SixGeyOz. A material of the second photo-sensing layer is SivOw. The second electrode covers the photo-sensing structure. A photo-sensing apparatus including the photo-sensing unit and a fabricating method of a photo-sensing unit are also provided.
    Type: Grant
    Filed: August 8, 2016
    Date of Patent: June 27, 2017
    Assignee: AU OPTRONICS CORPORATION
    Inventors: Yi-Huan Liao, Chih-Hao Lin, Jhen-Yu You, Jhen-Fu Cho, Chun Chang, An-Thung Cho
  • Publication number: 20170124373
    Abstract: A photo-sensing unit including a first electrode, a first insulation layer, a photo-sensing structure and a second electrode is provided. The first insulation layer covers the first electrode and has an opening exposing the first electrode. The photo-sensing structure is located on the first electrode and disposed in the opening of the first insulation layer. The photo-sensing structure includes a first photo-sensing layer and a second photo-sensing layer stacked with each other. A material of the first photo-sensing layer is SixGeyOz. A material of the second photo-sensing layer is SivOw. The second electrode covers the photo-sensing structure. A photo-sensing apparatus including the photo-sensing unit and a fabricating method of a photo-sensing unit are also provided.
    Type: Application
    Filed: August 8, 2016
    Publication date: May 4, 2017
    Inventors: Yi-Huan LIAO, Chih-Hao LIN, Jhen-Yu YOU, Jhen-Fu CHO, Chun CHANG, An-Thung CHO
  • Publication number: 20120280332
    Abstract: A method for fabricating a pixel structure is provided. A patterned semiconductor layer including a lower electrode, a doped source region, a doped drain region and a channel region is formed on a substrate. A gate dielectric layer is formed on the patterned semiconductor layer. A patterned first metal layer including a gate electrode, a scan line and a common electrode is formed on the gate dielectric layer, wherein the channel region is disposed below the gate electrode. A first dielectric layer and a first passivation layer are sequentially formed on the patterned first metal layer. A patterned second metal layer including a source, a drain and a data line is formed on the first passivation layer, wherein the data line is disposed above the common electrode, and the first dielectric layer and the first passivation layer are disposed between the data line and the common electrode.
    Type: Application
    Filed: July 27, 2011
    Publication date: November 8, 2012
    Applicant: AU OPTRONICS CORPORATION
    Inventors: Jhen-Yu You, Chen-Yueh Li, Ming-Yan Chen