Abstract: A memory device includes: a first conductor extending in parallel with a first axis; a first selector material comprising a first portion that extends along a first sidewall of the first conductor; a second selector material comprising a first portion that extends along the first sidewall of the first conductor; a first variable resistive material comprising a portion that extends along the first sidewall of the first conductor; and a second conductor extending in parallel with a second axis substantially perpendicular to the first axis, wherein the first portion of the first selector material, the first portion of the second selector material, and the portion of the first variable resistive material are arranged along a first direction in parallel with a third axis substantially perpendicular to the first axis and second axis.

Abstract: A near eye display system is provided. The near eye display system includes: a frame; a first near eye display mounted on the frame and configured to form a first image directly projected on a first retina of a first eye of a user; a second near eye display mounted on the frame and configured to form a second image directly projected on a second retina of a second eye of the user; and a processing unit located at the frame and configured to generate a display control signal to drive the first near eye display and the second near eye display.

Abstract: A display device and method of manufacturing thereof is provided. The display device includes: a substrate; a plurality of control transistors disposed in the substrate; a multi-layer interconnect (MLI) structure on the substrate; and a luminous device layer disposed on the MLI structure. The luminous device layer includes a plurality of sub-pixels corresponding to the plurality of control transistors, respectively. The MLI structure includes a plurality of routing features and at least one light blocking feature, and the plurality of routing features electrically connect each of the plurality of control transistors to the corresponding sub-pixel, and the at least one light blocking feature is operable to block stray light generated by the luminous device layer.

Abstract: A near eye display system is provided. The near eye display system includes: a frame comprising a main body and two temple arms; at least one near eye sensor mounted on the main body and configured to measure user eye parameters; a first near eye display mounted on the main body and configured to form a first image projected on a first retina of a first eye; a second near eye display mounted on the main body and configured to form a second image projected on a second retina of a second eye; and a processing unit located at least at one of the two temple arms and configured to generate a display control signal based at least on the user eye parameters, wherein the display control signal drives the first near eye display and the second near eye display.

Abstract: The present disclosure provides a semiconductor device. The semiconductor device includes: a substrate, having a first side and a second side opposite to the first side, wherein the substrate includes a plurality of trenches at the second side; a device layer, disposed on the first side of the substrate; an interconnect layer, disposed on the device layer; a luminous layer, disposed on the interconnect layer; and a capping layer, conformally disposed on the second side of the bended substrate. The semiconductor device is convexly curved.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate; a fixed structure, disposed on the substrate; a floating structure, connected to the fixed structure and separated from the substrate, wherein a first surface of the floating structure facing the substrate includes a plurality of recesses; and a capping layer, disposed on the first surface of the floating structure, wherein the capping layer exposes a portion of the floating structure.

Abstract: A near-eye display includes a semiconductor substrate that has a first curved surface and a second curved surface opposite to each other, and a plurality of luminous pixels formed over the first curved surface of the semiconductor substrate. The luminous pixels cooperatively form a display area of the near-eye display. The second curved surface of the semiconductor substrate is formed with a plurality of indentations at a portion that corresponds in position to the display area.

Abstract: A semiconductor structure is provided. The semiconductor structure includes a substrate, a pillar structure, a fin structure, and a buffering structure. The pillar structure is disposed on the substrate. The fin structure is connected to the pillar structure and is separate from the substrate. The buffering structure is disposed in the fin structure and includes a soft material layer and an air gap surrounded by the soft material layer. A method of manufacturing the semiconductor structure is also provided.

Abstract: A light-emitting package and a method for forming a light-emitting package are provided. The light-emitting package includes a substrate, an interconnection structure and a thermoelectric element. The interconnection structure is disposed over the substrate. The interconnection structure comprises a light-emitting element. The thermoelectric element penetrates through the substrate, extends into the interconnection structure and stops at the light-emitting element. The thermoelectric element is configured for local cooling of the light-emitting element.

Abstract: Devices and methods of manufacture for a graduated, “step-like,” semiconductor structure having two or more resonator trenches. A semiconductor structure may comprise a first resonator and a second resonator. The first resonator comprising a first metallic resonance layer and a capping plate having a bottom surface that is a first distance from a distal end of the first metallic resonance layer 128. The second resonator comprising a second metallic resonance layer and the capping plate, in which the bottom surface is a second distance from a from a distal end of the second metallic resonance layer 128b, and in which first distance is different from the second distance.

Abstract: Devices and methods of manufacture for a graduated, “step-like,” semiconductor structure having two or more resonator trenches. A semiconductor structure may comprise a first resonator and a second resonator. The first resonator comprising a first metallic resonance layer and a capping plate having a bottom surface that is a first distance from a distal end of the first metallic resonance layer 128. The second resonator comprising a second metallic resonance layer and the capping plate, in which the bottom surface is a second distance from a from a distal end of the second metallic resonance layer 128b, and in which first distance is different from the second distance.

Abstract: Devices and methods of manufacture for a graduated, “step-like,” capacitance structure having two or more capacitors. A semiconductor structure comprising a capacitor structure, the capacitor structure comprising a first capacitor and a second capacitor. The first capacitor comprising a first bottom electrode and a top electrode having a bottom surface that is a first distance from a top surface of the first bottom electrode. The second capacitor comprising a second bottom electrode and the top electrode, in which the bottom surface is a second distance from a top surface of the second bottom electrode, and in which the first distance is different from the second distance.

Abstract: A device structure may include an interconnect-level dielectric material layer located over a substrate, a first metal interconnect structure embedded in the interconnect-level dielectric material layer and including a first metallic barrier liner and a first metallic fill material portion, and an overlying dielectric material layer. An opening in the overlying dielectric material layer may be formed entirely within an area of the first metallic barrier layer and outside the area of the first metallic fill material portion to reduce plasma damage. A second metal interconnect structure contacting a top surface of the first metallic barrier liner may be formed in the opening. An entirety of a top surface the first metallic fill material portion contacts a bottom surface of the overlying dielectric material layer.

Abstract: A cavity may be formed in a dielectric material layer overlying a substrate. A layer stack including a metallic barrier liner, a metallic fill material layer, and a metallic capping material may be deposited in the cavity and over the dielectric material layer. Portions of the layer stack located above a horizontal plane including a top surface of the dielectric material layer may be removed. A contiguous set of remaining material portions of the layer stack includes a metal interconnect structure that is free of a pitted surface.

Abstract: A device structure may include an interconnect-level dielectric material layer located over a substrate, a first metal interconnect structure embedded in the interconnect-level dielectric material layer and including a first metallic barrier liner and a first metallic fill material portion, and an overlying dielectric material layer. An opening in the overlying dielectric material layer may be formed entirely within an area of the first metallic barrier layer and outside the area of the first metallic fill material portion to reduce plasma damage. A second metal interconnect structure contacting a top surface of the first metallic barrier liner may be formed in the opening. An entirety of a top surface the first metallic fill material portion contacts a bottom surface of the overlying dielectric material layer.

Abstract: A cavity may be formed in a dielectric material layer overlying a substrate. A layer stack including a metallic barrier liner, a metallic fill material layer, and a metallic capping material may be deposited in the cavity and over the dielectric material layer. Portions of the layer stack located above a horizontal plane including a top surface of the dielectric material layer may be removed. A contiguous set of remaining material portions of the layer stack includes a metal interconnect structure that is free of a pitted surface.

Abstract: A RRAM device is provided. The RRAM device includes: a bottom electrode in a first dielectric layer; a switching layer in a second dielectric layer over the first dielectric layer, wherein a conductive path is formed in the switching layer when a forming voltage is applied; and a needle-like-shaped top electrode region in a third dielectric layer over the second dielectric layer. The needle-like-shaped top electrode region includes: an oxygen-rich dielectric layer, wherein a lower end of the oxygen-rich dielectric layer is a tip; and a top electrode over the oxygen-rich dielectric layer.

Abstract: Interconnect structures and methods of forming interconnect structures are disclosed that provide decreased risk of unwanted via formation through interconnect-level dielectric layers. A method of forming an interconnect structure includes forming first and second dielectric layers over a first metal interconnect feature, where the dielectric layers include localized elevated regions caused by a hillock in the first metal interconnect feature. A planarization process removes the localized elevated region of the second dielectric layer, and third and fourth dielectric layers are formed over the planar upper surface of the second dielectric layer. An etching process through the third and fourth dielectric layers, and into the second dielectric layer, provides a trench having a planar bottom surface.

Abstract: An integrated circuit (IC) device includes a chip having a semiconductor substrate and a thermoelectric module embedded in the semiconductor substrate, where the thermoelectric module includes a first semiconductor structure electrically connected to a second semiconductor structure, where a bottom portion of thermoelectric module extends through a thickness of the semiconductor substrate, and where the first semiconductor structure and the second semiconductor structure include dopants of different conductivity types.

Abstract: The present disclosure is directed to methods for generating a multichip, hybrid node stacked package designs from single chip designs using artificial intelligence techniques, such as machine learning. The methods disclosed herein can facilitate heterogenous integration using advanced packaging technologies, enlarge design for manufacturability of single chip designs, and/or reduce cost to manufacture and/or size of systems provided by single chip designs. An exemplary method includes receiving a single chip design for a single chip of a single process node, wherein the single chip design has design specifications and generating a multichip, hybrid node design from the single chip design by disassembling the single chip design into chiplets having different functions and different process nodes based on the design specifications and integrating the chiplets into a stacked chip package structure.