Patents by Inventor Jheng-Yuan Chen

Jheng-Yuan Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • MASK AND METHOD OF FORMING THE SAME
    Publication number: 20230259014
    Abstract: A mask includes a reflective layer, an absorption layer and an absorption part. The absorption layer is disposed over the reflective multilayer. The absorption part is disposed in the reflective layer and the absorption layer, wherein an entire top surface of the absorption part is substantially flush with a top surface of the absorption layer.
    Type: Application
    Filed: April 27, 2023
    Publication date: August 17, 2023
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Shih-Hao Yang, Jheng-Yuan Chen
  • Mask and method of forming the same
    Patent number: 11662656
    Abstract: A mask includes a substrate, a reflective multilayer, an absorption layer and an absorption part. The substrate includes a mask image region and a mask frame region, wherein the mask frame region has a mask black border region adjacent to the mask image region. The reflective multilayer is disposed over the substrate. The absorption layer is disposed over the reflective multilayer. The absorption part is disposed in the reflective multilayer and the absorption layer and in the mask black border region, wherein an entire top surface of the absorption part is substantially flush with a top surface of the absorption layer.
    Type: Grant
    Filed: November 23, 2020
    Date of Patent: May 30, 2023
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Shih-Hao Yang, Jheng-Yuan Chen
  • MASK AND METHOD OF FORMING THE SAME
    Publication number: 20210103210
    Abstract: A mask includes a substrate, a reflective multilayer, an absorption layer and an absorption part. The substrate includes a mask image region and a mask frame region, wherein the mask frame region has a mask black border region adjacent to the mask image region. The reflective multilayer is disposed over the substrate. The absorption layer is disposed over the reflective multilayer. The absorption part is disposed in the reflective multilayer and the absorption layer and in the mask black border region, wherein an entire top surface of the absorption part is substantially flush with a top surface of the absorption layer.
    Type: Application
    Filed: November 23, 2020
    Publication date: April 8, 2021
    Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Shih-Hao Yang, Jheng-Yuan Chen
  • Mask, method of forming the same and method of manufacturing a semiconductor device using the same
    Patent number: 10845698
    Abstract: A mask, a method of forming the same and a method of manufacturing a semiconductor device using the same are disclosed. The mask includes a substrate, a reflective multilayer coating, an absorption layer and an absorption part. The substrate includes a mask image region and a mask frame region, wherein the mask frame region has a mask black border region adjacent to the mask image region. The reflective multilayer coating is disposed over the substrate. The absorption layer is disposed over the reflective multilayer coating. The absorption part is disposed in the reflective multilayer and the absorption layer in the mask black border region.
    Type: Grant
    Filed: May 30, 2018
    Date of Patent: November 24, 2020
    Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Shih-Hao Yang, Jheng-Yuan Chen
  • MASK AND METHOD FOR MANUFACTURING THE SAME AND METHOD FOR PATTERNING A LAYER
    Publication number: 20200073224
    Abstract: A mask for reflecting an electromagnetic radiation includes a substrate, a reflective multi-layered stack over a surface of the substrate, a metal capping layer over the reflective multi-layered stack, a metal silicide buffer layer over the metal capping layer, and an optical absorber pattern over the metal silicide buffer layer.
    Type: Application
    Filed: June 27, 2019
    Publication date: March 5, 2020
    Inventors: CHUN-LANG CHEN, JHENG-YUAN CHEN, CHIH-CHIANG TU, SHIH-HAO YANG
  • MASK, METHOD OF FORMING THE SAME AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE USING THE SAME
    Publication number: 20190369484
    Abstract: A mask, a method of forming the same and a method of manufacturing a semiconductor device using the same are disclosed. The mask includes a substrate, a reflective multilayer coating, an absorption layer and an absorption part. The substrate includes a mask image region and a mask frame region, wherein the mask frame region has a mask black border region adjacent to the mask image region. The reflective multilayer coating is disposed over the substrate. The absorption layer is disposed over the reflective multilayer coating. The absorption part is disposed in the reflective multilayer and the absorption layer in the mask black border region.
    Type: Application
    Filed: May 30, 2018
    Publication date: December 5, 2019
    Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.
    Inventors: Chih-Chiang Tu, Chun-Lang Chen, Shih-Hao Yang, Jheng-Yuan Chen