Abstract: A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant.

Abstract: A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant.

Abstract: A semiconductor device and method of making same are disclosed. In some embodiments, a method includes: forming a first thermoelectric conduction leg on a substrate; forming a second thermoelectric conduction leg on the substrate to be aligned with the first thermoelectric conduction leg along a same row; forming at least one intermediate thermoelectric conduction structure on an end of the second thermoelectric conduction leg; forming a contact structure to couple the first and second thermoelectric conduction legs via the at least one intermediate thermoelectric conduction structure; and recessing the substrate to form at least one trench substantially adjacent to a respective side edge of either the first thermoelectric conduction leg or the second thermoelectric conduction leg.

Abstract: A semiconductor device and method of making same are disclosed. In some embodiments, a method includes: forming a first thermoelectric conduction leg on a substrate; forming a second thermoelectric conduction leg on the substrate to be aligned with the first thermoelectric conduction leg along a same row; forming at least one intermediate thermoelectric conduction structure on an end of the second thermoelectric conduction leg; forming a contact structure to couple the first and second thermoelectric conduction legs via the at least one intermediate thermoelectric conduction structure; and recessing the substrate to form at least one trench substantially adjacent to a respective side edge of either the first thermoelectric conduction leg or the second thermoelectric conduction leg.

Abstract: A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant.

Abstract: A semiconductor device includes a substrate; a first thermoelectric conduction leg, disposed on the substrate, and doped with a first type of dopant; a second thermoelectric conduction leg, disposed on the substrate, and doped with a second type of dopant, wherein the first and second thermoelectric conduction legs are spatially spaced from each other but disposed along a common row on the substrate; and a first intermediate thermoelectric conduction structure, disposed on a first end of the second thermoelectric conduction leg, and doped with the first type of dopant.