Patents by Inventor Jhenghan YANG

Jhenghan YANG has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20240111075
    Abstract: Embodiments described herein relate to flat optical devices with a coating layer including monolayers selected from the group consisting of molybdenum disulfide (MoS2), tungsten disulfide (WS2), tungsten diselenide (WSe2), molybdenum diselenide (MoSe2), molybdenum ditelluride (MoTe2), titanium disulfide (TlS2), zirconium disulfide (ZrS2), zirconium diselenide (ZrSe2), hafnium disulfide (HfS2), platinum disulfide (PtS2), tin disulfide (SnS2), or combinations thereof. The coating layer is disposed over a plurality of optical device structures of the optical device. The monolayers may alternate between the materials to form the coating layer or may be a uniform coating layer of a single material. The coating layer is disposed over each optical device structure of the plurality of optical device structures.
    Type: Application
    Filed: January 31, 2022
    Publication date: April 4, 2024
    Inventors: Russell Chin Yee TEO, James CONNOLLY, Chien-An CHEN, Andrew CEBALLOS, Jing JIANG, Jhenghan YANG, Yongan XU
  • Publication number: 20240101937
    Abstract: Embodiments of the present disclosure herein include a method of removing a contamination material from an optical device. The method may include disposing an optical device in a process chamber, the optical device having optical device structures formed in a substrate, the contamination material is disposed at least on sidewalls of the optical device structures and within trenches between the optical device structures, and exposing the optical device to a plasma generated in the process chamber, the plasma generated from oxygen gas (O2), chlorine gas (Cl2), Argon (Ar), or a combination thereof, the exposing the optical device to the plasma removes the contamination material.
    Type: Application
    Filed: September 22, 2023
    Publication date: March 28, 2024
    Inventors: Wei WU, Jhenghan YANG, Yongmei CHEN, Jinxin FU, Ludovic GODET
  • Publication number: 20230408913
    Abstract: The present disclosure generally relates to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A first process of forming the nanostructures comprises depositing a first layer of a first material on a glass substrate, forming one or more trenches in the first layer, and depositing a second layer of a second material in the one or more holes to trenches a first alternating layer of alternating first portions of the first material and second portions of the second material. The first process is repeated one or more times to form additional alternating layers over the first alternating layer. Each first portion of each alternating layer is disposed in contact with and offset a distance from an adjacent first portion in adjacent alternating layers. A second process comprises removing either the first or the second portions from each alternating layer to form the plurality of nanostructures.
    Type: Application
    Filed: September 1, 2023
    Publication date: December 21, 2023
    Inventors: Yongan XU, Jinxin FU, Jhenghan YANG, Ludovic GODET
  • Patent number: 11754919
    Abstract: The present disclosure generally relates to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A first process of forming the nanostructures comprises depositing a first layer of a first material on a glass substrate, forming one or more trenches in the first layer, and depositing a second layer of a second material in the one or more holes to trenches a first alternating layer of alternating first portions of the first material and second portions of the second material. The first process is repeated one or more times to form additional alternating layers over the first alternating layer. Each first portion of each alternating layer is disposed in contact with and offset a distance from an adjacent first portion in adjacent alternating layers. A second process comprises removing either the first or the second portions from each alternating layer to form the plurality of nanostructures.
    Type: Grant
    Filed: November 23, 2021
    Date of Patent: September 12, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Yongan Xu, Jinxin Fu, Jhenghan Yang, Ludovic Godet
  • Publication number: 20230151479
    Abstract: Embodiments of the present disclosure generally relate to processing a workpiece containing a substrate during deposition, etching, and/or curing processes with a mask to have localized deposition on the workpiece. A mask is placed on a first layer of a workpiece, which protects a plurality of trenches from deposition of a second layer. In some embodiments, the mask is placed before deposition of the second layer. In other embodiments, the second layer is cured before the mask is deposited. In other embodiments, the second layer is etched after the mask is deposited. Methods disclosed herein allow the deposition of a second layer in some of the trenches present in the workpiece, while at least partially preventing deposition of the second layer in other trenches present in the workpiece.
    Type: Application
    Filed: January 6, 2023
    Publication date: May 18, 2023
    Inventors: Jinrui GUO, Ludovic GODET, Rutger MEYER TIMMERMAN THIJSSEN, Yongan XU, Jhenghan YANG, Chien-An CHEN
  • Patent number: 11572619
    Abstract: Embodiments of the present disclosure generally relate to processing a workpiece containing a substrate during deposition, etching, and/or curing processes with a mask to have localized deposition on the workpiece. A mask is placed on a first layer of a workpiece, which protects a plurality of trenches from deposition of a second layer. In some embodiments, the mask is placed before deposition of the second layer. In other embodiments, the second layer is cured before the mask is deposited. In other embodiments, the second layer is etched after the mask is deposited. Methods disclosed herein allow the deposition of a second layer in some of the trenches present in the workpiece, while at least partially preventing deposition of the second layer in other trenches present in the workpiece.
    Type: Grant
    Filed: February 19, 2020
    Date of Patent: February 7, 2023
    Assignee: APPLIED MATERIALS, INC.
    Inventors: Jinrui Guo, Ludovic Godet, Rutger Meyer Timmerman Thijssen, Yongan Xu, Jhenghan Yang, Chien-An Chen
  • Publication number: 20220171283
    Abstract: The present disclosure generally relates to methods of forming optical devices comprising nanostructures disposed on transparent substrates. A first process of forming the nanostructures comprises depositing a first layer of a first material on a glass substrate, forming one or more trenches in the first layer, and depositing a second layer of a second material in the one or more holes to trenches a first alternating layer of alternating first portions of the first material and second portions of the second material. The first process is repeated one or more times to form additional alternating layers over the first alternating layer. Each first portion of each alternating layer is disposed in contact with and offset a distance from an adjacent first portion in adjacent alternating layers. A second process comprises removing either the first or the second portions from each alternating layer to form the plurality of nanostructures.
    Type: Application
    Filed: November 23, 2021
    Publication date: June 2, 2022
    Inventors: Yongan XU, Jinxin FU, Jhenghan YANG, Ludovic GODET
  • Publication number: 20200332414
    Abstract: Embodiments of the present disclosure generally relate to processing a workpiece containing a substrate during deposition, etching, and/or curing processes with a mask to have localized deposition on the workpiece. A mask is placed on a first layer of a workpiece, which protects a plurality of trenches from deposition of a second layer. In some embodiments, the mask is placed before deposition of the second layer. In other embodiments, the second layer is cured before the mask is deposited. In other embodiments, the second layer is etched after the mask is deposited. Methods disclosed herein allow the deposition of a second layer in some of the trenches present in the workpiece, while at least partially preventing deposition of the second layer in other trenches present in the workpiece.
    Type: Application
    Filed: February 19, 2020
    Publication date: October 22, 2020
    Inventors: Jinrui GUO, Ludovic GODET, Rutger MEYER TIMMERMAN THIJSSEN, Yongan XU, Jhenghan YANG, Chien-An CHEN